Single-mode, high-frequency, high-power narrowband spintronic terahertz emitter

1. A heterostructure comprising:

a transducer layer having a light receiving surface and consisting of a metal selected from the group consisting of aluminum, iron, platinum, gold, cobalt, and nickel;

a thermal insulation layer adjacent to a surface of the transducer layer opposite the light receiving surface; and

a magnetic layer comprising a ferromagnetic or ferrimagnetic material adjacent to a surface of the thermal insulation layer opposite the transducer layer, such that the thermal insulation layer is disposed between the transducer layer and the magnetic layer, the magnetic layer having an exchange coupling coefficient of at least 10 pJ m −1 and magnetoelastic coupling coefficient with an absolute value of at least 5×10 6 J m −1 .

2. The heterostructure of claim 1 , wherein the magnetic layer has a thickness of at least 200 nm.

3. The heterostructure of claim 2 , wherein the magnetic layer has a thickness in the range from 200 nm to 1 μm.

4. The heterostructure of claim 1 , wherein the magnetic layer is a layer of Fe, a layer of Co, a layer of Ni, a layer of an FeGa alloy, a layer of a CoFe alloy, a layer of a CoFeB alloy, a layer of a TbDyFe alloy, a layer of Fe 3 O 4 , a layer of a cobalt ferrite, a layer of yttrium iron garnet, or a layer of thulium iron garnet.

5. The heterostructure of claim 1 , wherein the thermal insulation layer comprises MgO, Al 2 O 3 , Ga 2 O 3 , GaAs, Gd 2 O 3 , HfO 2 , or SrTiO 3 .

6. The heterostructure of claim 1 , wherein the thermal insulation layer is a layer of magnesium oxide, the magnetic layer is a layer of an FeGa alloy, a CoFeB alloy, or a CoFe alloy, and the transducer layer is a layer of aluminum or iron.

7. The heterostructure of claim 6 , wherein the magnetic layer has a thickness of at least 200 nm.

8. A terahertz radiation source comprising:

(a) a heterostructure comprising:

(i) a light-to-acoustic transducer layer having a light receiving surface;

(ii) a thermal insulation layer adjacent to a surface of the light-to-acoustic transducer layer opposite the light receiving surface; and

(iii) a magnetic layer comprising a ferromagnetic or ferrimagnetic material adjacent to a surface of the thermal insulation layer opposite the transducer layer, such that the thermal insulation layer is disposed between the transducer layer and the magnetic layer; and

(b) a femtosecond pulse laser positioned to direct femtosecond laser pulses onto the light receiving surface of the transducer layer.

9. The terahertz radiation source of claim 8 , wherein the magnetic layer has a thickness of at least 200 nm.

10. The terahertz radiation source of claim 9 , wherein the magnetic layer has a thickness in the range from 200 nm to 1 μm.

11. The terahertz radiation source of claim 8 , wherein the light-to-acoustic transducer layer is a layer of aluminum, iron, platinum, gold, cobalt, or nickel.

12. The terahertz radiation source of claim 8 , wherein the thermal insulation layer is a layer of magnesium oxide and the magnetic layer is a layer of an FeGa alloy, a CoFeB alloy, or a CoFe alloy.

13. The terahertz radiation source of claim 12 , wherein the transducer layer is a layer of aluminum or a layer of iron.

14. A method of generating THz radiation using a terahertz radiation source comprising:

(a) a heterostructure comprising:

(i) a light-to-acoustic transducer layer having a light receiving surface;

(ii) a thermal insulation layer adjacent to a surface of the transducer layer opposite the light receiving surface; and

(iii) a magnetic layer comprising a ferromagnetic or ferrimagnetic material adjacent to a surface of the thermal insulation layer opposite the transducer layer, such that the thermal insulation layer is disposed between the transducer layer and the magnetic layer; and

(b) a femtosecond pulse laser positioned to direct femtosecond laser pulses onto the light receiving surface of the transducer layer, the method comprising:

irradiating the light receiving surface of the transducer layer with femtosecond laser pulses from the femtosecond pulse laser, thereby generating THz radiation emission from the magnetic layer.

15. The method of claim 14 , wherein the magnetic layer has a thickness of at least 200 nm.

16. The method of claim 15 , wherein the magnetic layer has a thickness in the range from 200 nm to 1 μm.

17. The method of claim 14 , wherein the light-to-acoustic transducer layer is a layer of aluminum, iron, platinum, gold, cobalt, or nickel.

18. The terahertz radiation source of claim 14 , wherein the thermal insulation layer is a layer of magnesium oxide and the magnetic layer is a layer of an FeGa alloy, a CoFeB alloy, or a CoFe alloy.

19. The method of claim 18 , wherein the transducer layer is a layer of aluminum or a layer of iron.

20. A terahertz time-domain spectrometer comprising:

a femtosecond pulse laser that emits a pulsed femtosecond laser beam;

a beam splitter in a path of the pulse femtosecond laser beam, wherein the beam splitter splits the pulsed femtosecond laser beam into a pump beam and a probe beam;

the heterostructure comprising:

a light-to-acoustic transducer layer having a light receiving surface;

a thermal insulation layer adjacent to a surface of the transducer layer opposite the light receiving surface; and

a magnetic layer comprising a ferromagnetic or ferrimagnetic material adjacent to a surface of the thermal insulation layer opposite the transducer layer, such that the thermal insulation layer is disposed between the transducer layer and the magnetic layer;

a terahertz detector, configured to detect a terahertz pulse output signal emitted from the magnetic layer; and

a delay line assembly configured in the path of the probe beam to create an adjustable time delay in the probe beam and to direct the probe beam onto the terahertz detector.