Performing threshold voltage offset bin selection by package for memory devices
An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to initialize a block family associated with the memory device; program a first block in a first die of the memory device and a second block in a second die of the memory device, wherein the first die and the second die are assigned to a die group; associate the first block and the second block with the block family; and associate the die group with a first threshold voltage offset bin.
1. A system comprising:
a memory device; and
a processing device, operatively coupled to the memory device, to perform operations comprising:
initializing a block family associated with the memory device;
programming a first block in a first die of the memory device and a second block in a second die of the memory device, wherein the first die and the second die are assigned to a die group;
associating the first block and the second block with the block family; and
associating the die group with a first threshold voltage offset bin.
2. The system of claim 1 , wherein the die group comprises a plurality of dice from a single substrate.
3. The system of claim 1 , wherein the die group comprises a first die from a first substrate and a second die from a second substrate.
4. The system of claim 1 , wherein the processing device is further to perform operations comprising:
responsive to detecting a triggering event, associating the die group with a second threshold voltage offset bin based on a calibration process performed on the first die.
5. The system of claim 1 , wherein the processing device is further to perform operations comprising:
initializing a timer associated with the block family;
responsive to detecting expiration of the timer, closing the block family.
6. The system of claim 1 , wherein associating the first block with the block family further comprises:
appending, to block family metadata, a record associating the first block with the block family.
7. The system of claim 1 , wherein the processing device is further to perform operations comprising:
determining a threshold voltage offset associated with the block family; and
computing a modified threshold voltage by applying the threshold voltage offset to a base read level voltage associated with the memory device;
reading, using the modified threshold voltage, data from the first block of the block family.
8. A method comprising:
initializing a block family associated with the memory device;
programming a first block in a first die of the memory device and a second block in a second die of the memory device, wherein the first die and the second die are assigned to a die group;
associating the first block and the second block with the block family; and
associating the first die and the second die with a threshold voltage offset bin based on a calibration process performed on the first die.
9. The method of claim 8 , wherein the first die and the second die are attached to a single substrate.
10. The method of claim 8 , wherein the die group comprises a first die from a first substrate and a second die from a second substrate.
11. The method of claim 8 , further comprising:
initializing a timer associated with the block family;
responsive to detecting expiration of the timer, closing the block family.
12. The method of claim 8 , wherein associating the first block with the block family further comprises:
appending, to block family metadata, a record associating the first block with the block family.
13. The method of claim 8 , further comprising:
determining a threshold voltage offset associated with the block family; and
computing a modified threshold voltage by applying the threshold voltage offset to a base read level voltage associated with the memory device;
reading, using the modified threshold voltage, data from the first block of the block family.
14. The method of claim 8 , further comprising:
programming a third block in a third die of the memory device, wherein the third die is assigned to the die group;
associating the third block with the block family; and
associating the third die with a further threshold voltage offset bin based on a calibration process performed on the first die and a pre-characterized offset associated with the third die.
15. A non-transitory computer-readable storage medium comprising instructions that,
when executed by a processing device operatively coupled to a memory device, perform operations comprising:
initializing a block family associated with the memory device;
programming a first block in a first die of the memory device and a second block in a second die of the memory device, wherein the first die and the second die are assigned to a die group;
associating the first block and the second block with the block family; and
associating the die group with a first threshold voltage offset bin.
16. The non-transitory computer-readable storage medium of claim 15 , wherein the die group comprises a plurality of dice from a single substrate.
17. The non-transitory computer-readable storage medium of claim 15 , wherein the die group comprises a first die from a first substrate and a second die from a second substrate.
18. The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is further to perform operations comprising:
responsive to detecting a triggering event, associating the die group with a second threshold voltage offset bin based on a calibration process performed on the first die.
19. The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is further to perform operations comprising:
initializing a timer associated with the block family;
responsive to detecting expiration of the timer, closing the block family.
20. The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is further to perform operations comprising:
determining a threshold voltage offset associated with the block family; and
computing a modified threshold voltage by applying the threshold voltage offset to a base read level voltage associated with the memory device;
reading, using the modified threshold voltage, data from the first block of the block family.