IP Library Granted Patent US 11,211,535
Granted Patent B2
US 11,211,535 · App. 16/727,502 · Granted Dec 28, 2021

Method for fabricating micro light-emitting diode display

Inventors: Yi-Ching Chen (Miaoli County, TW); Pei-Hsin Chen (Miaoli County, TW); Yi-Chun Shih (Miaoli County, TW); Tzu-Yang Lin (Miaoli County, TW); Yu-Hung Lai (Miaoli County, TW)
Assignee: PLAYNITRIDE DISPLAY CO., LTD.
H01L33/62H01L21/6835H01L22/22H01L25/0753H01L2221/68368H01L2933/0066
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Quick Facts
Patent No.
US 11,211,535
App. No.
16/727,502
Granted
Dec 28, 2021
Kind
B2
Abstract

A method for fabricating a micro light-emitting diode display is provided. The method includes disposing a plurality of micro light-emitting diodes on a carrier; transferring the micro light-emitting diodes from the carrier to a display substrate and disposing the micro light-emitting diodes in a plurality of pixels of the display substrate; subjecting the micro light-emitting diodes to a pre-bonding process to electrically connect the micro light-emitting diodes to the display substrate; subjecting the micro light-emitting diodes pre-bonded to the display substrate to a first detection process, thereby identifying whether a faulty micro light-emitting diode is present or not; and, subjecting the micro light-emitting diodes to the main bonding process after the first detection process.

Claims (23)

1. A method for fabricating a micro light-emitting diode display, comprising:

disposing a plurality of micro light-emitting diodes on a carrier;

transferring the micro light-emitting diodes from the carrier to a display substrate and disposing the micro light-emitting diodes in a plurality of pixels of the display substrate;

subjecting the micro light-emitting diodes to a pre-bonding process to electrically connect the micro light-emitting diodes to the display substrate;

subjecting the micro light-emitting diodes pre-bonded to the display substrate to a first detection process, thereby identifying whether a faulty micro light-emitting diode is present or not; and

subjecting the micro light-emitting diodes to a main bonding process after the first detection process,

wherein the first detection process is an electrical detection, and the pixel having the faulty micro light-emitting diode is repaired after the faulty micro light-emitting diode is identified,

wherein the micro light-emitting diodes subjected to the main bonding process comprise both identified good micro light-emitting diodes and the repaired micro light-emitting diode.

2. The method as claimed in claim 1 , further comprising:

subjecting the micro light-emitting diodes on the carrier to a second detection process and identifying good micro light-emitting diodes of the micro light-emitting diodes on the carrier; and

transferring the good micro light-emitting diodes to the display substrate and subjecting the good micro light-emitting diodes to a pre-bonding process.

3. The method as claimed in claim 2 , wherein the second detection process is an optical detection.

4. The method as claimed in claim 1 , wherein the step of repairing the pixel having the faulty micro light-emitting diode comprises:

replacing the faulty micro light-emitting diode with a known good micro light-emitting diode.

5. The method as claimed in claim 1 , wherein the step of repairing the pixel having the faulty micro light-emitting diode comprises:

disconnecting an electrical connection between the faulty micro light-emitting diode and a control circuit of the display substrate; and

electrically connecting a redundant micro light-emitting diode to the control circuit of the display substrate.

6. The method as claimed in claim 1 , wherein there is a first bonding strength between the micro light-emitting diode and the display substrate after subjecting the micro light-emitting diode to a pre-bonding process, and there is a second bonding strength between the micro light-emitting diode and the display substrate after subjecting the micro light-emitting diode to the main bonding process, wherein the second bonding strength is greater than the first bonding strength.

7. The method as claimed in claim 1 , wherein the bonding temperature of the pre-bonding process is lower than the bonding temperature of the main bonding process.

8. The method as claimed in claim 7 , wherein the difference between the bonding temperature of the pre-bonding process and the bonding temperature of the main bonding process is greater than or equal to 100° C.

9. The method as claimed in claim 1 , wherein the process pressure of the pre-bonding process is lower than the process pressure of the main bonding process.

10. The method as claimed in claim 9 , wherein the difference between the process pressure of the pre-bonding process and the process pressure of the main bonding process is greater than or equal to 20 kgf/cm 2 .

11. The method as claimed in claim 1 , wherein the process period of the pre-bonding process is lower than the process period of the main bonding process.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 27, 2019
From: CHEN, YI-CHING; CHEN, PEI-HSIN; SHIH, YI-CHUN; LIN, TZU-YANG; LAI, YU-HUNG
To: PLAYNITRIDE DISPLAY CO., LTD.
Reel/Frame 051377/0808 →
Priority Claims (1)
TW 108119634 · Jun 6, 2019 · national
Continuity (1)
Related Publication 20200388736A1 · Dec 10, 2020
Cited By (1)
US 12,254,799