IP Library Granted Patent US 11,216,595
Granted Patent B2
US 11,216,595 · App. 16/578,319 · Granted Jan 4, 2022

Encryption engine with an undetectable/tamper-proof private key in late node CMOS technology

Inventors: Richard H. Boivie (Monroe, CT); Eduard A. Cartier (New York, NY); Daniel J. Friedman (Sleepy Hollow, NY); Kohji Hosokawa (Kawasaki, JP); Charanjit Jutla (New York, NY); Wanki Kim (Chappaqua, NY); Chandrasekara Kothandaraman (New York, NY); Chung Lam (Peekskill, NY); Frank R. Libsch (White Plains, NY); Seiji Munetoh (Tokyo, JP); Ramachandran Muralidhar (Mahopac, NY); Vijay Narayanan (New York, NY); Dirk Pfeiffer (Croton on Hudson, NY); Devendra K. Sadana (Pleasantville, NY); Ghavam G. Shahidi (Pound Ridge, NY); Robert L. Wisnieff (Ridgefield, CT)
Assignee: International Business Machines Corporation
G06F21/72G06F21/75G11C16/00
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Quick Facts
Patent No.
US 11,216,595
App. No.
16/578,319
Granted
Jan 4, 2022
Kind
B2
Abstract

A private key of a public-private key pair with a corresponding identity is written to an integrated circuit including a processor, a non-volatile memory, and a cryptographic engine coupled to the processor and the non-volatile memory. The private key is written to the non-volatile memory. The integrated circuit is implemented in complementary metal-oxide semiconductor 14 nm or smaller technology. The integrated circuit is permanently modified, subsequent to the writing, such that further writing to the non-volatile memory is disabled and such that the private key can be read only by the cryptographic engine and not off-chip. Corresponding integrated circuits and wafers are also disclosed.

Claims (40)

1. A method comprising:

writing a private key of a public-private key pair with a corresponding identity to an integrated circuit comprising a processor, a non-volatile memory, and a cryptographic engine coupled to said processor and said non-volatile memory, said private key being written to said non-volatile memory, said integrated circuit being implemented in complementary metal-oxide semiconductor 14 nm or smaller technology;

modifying said non-volatile memory to be one-time programmable by inducing a threshold voltage shift in transistors of said non-volatile memory, subsequent to said writing, and to inhibit at least one of reverse engineering and tampering; and

permanently modifying said integrated circuit, subsequent to said writing, such that further writing to said non-volatile memory is disabled and such that said private key can be read only by said cryptographic engine and not off-chip.

2. The method of claim 1 , wherein, in said writing step, said non-volatile memory is dedicated to said private key.

3. The method of claim 1 , further comprising inducing oxide breakdown in transistors of said non-volatile memory, subsequent to said writing, to inhibit at least one of the reverse engineering and the tampering.

4. The method of claim 1 , further comprising, subsequent to said permanent modification:

providing said private key from said non-volatile memory to said cryptographic engine; and

using said private key from said non-volatile memory to respond to a challenge question.

5. The method of claim 1 , further comprising, subsequent to said permanent modification:

providing said private key from said non-volatile memory to said cryptographic engine; and

using said private key from said non-volatile memory to carry out decryption.

6. The method of claim 1 , further comprising, subsequent to said permanent modification:

providing said private key from said non-volatile memory to said cryptographic engine; and

using said private key from said non-volatile memory to carry out encryption.

7. The method of claim 1 , wherein said writing is carried out with a write circuit of said non-volatile memory, and wherein said permanently modifying said integrated circuit such that further writing to said non-volatile memory is disabled comprises disabling said write circuit with an electrical fuse.

8. The method of claim 1 , wherein said writing is carried out with a dedicated pin of said non-volatile memory, and wherein said permanently modifying said integrated circuit such that further writing to said non-volatile memory is disabled comprises removing said dedicated pin.

9. An integrated circuit comprising:

a processor;

a non-volatile memory storing a private key of a public-private key pair; and

a cryptographic engine coupled to said processor and said non-volatile memory;

wherein:

said integrated circuit is implemented in complementary metal-oxide semiconductor 14 nm or smaller technology;

said integrated circuit is permanently configured such that further writing to said non-volatile memory, beyond said private key, is disabled;

said integrated circuit is permanently configured to induce oxide breakdown in transistors of said non-volatile memory, subsequent to said writing, to inhibit at least one of reverse engineering and tampering; and

said integrated circuit is permanently configured such that said private key can be read only by said cryptographic engine and not off-chip.

10. The integrated circuit of claim 9 , wherein said non-volatile memory is dedicated to said private key.

11. The integrated circuit of claim 9 , wherein said non-volatile memory comprises metal oxide semiconductor field effect transistors having dielectrics, and wherein said dielectrics have charges trapped therein to provide a threshold voltage shift in said transistors, to inhibit the reverse engineering.

12. The integrated circuit of claim 9 , wherein said non-volatile memory comprises metal oxide semiconductor field effect transistors exhibiting oxide breakdown to inhibit the reverse engineering.

13. The integrated circuit of claim 9 , further comprising a write circuit of said non-volatile memory, isolated by a blown electrical fuse.

14. An integrated circuit comprising:

a processor;

a non-volatile memory storing a private key of a public-private key pair;

a cryptographic engine coupled to said processor and said non-volatile memory; and

an unblown electrical fuse structure;

wherein:

said integrated circuit is implemented in complementary metal-oxide semiconductor 14 nm or smaller technology;

said integrated circuit is configured such that further writing to said non-volatile memory, beyond said private key, is disabled when said fuse structure is blown; and

said integrated circuit is configured such that subsequent to blowing of said fuse structure, said private key can be read only by said cryptographic engine and not off-chip, said private key in said non-volatile memory being encoded using two-bit encoding to inhibit at least one of reverse engineering and tampering.

15. The integrated circuit of claim 14 , wherein said non-volatile memory is dedicated to said private key.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 21, 2019
From: BOIVIE, RICHARD H.; CARTIER, EDUARD A.; FRIEDMAN, DANIEL J.; HOSOKAWA, KOHJI; JUTLA, CHARANJIT; KIM, WANKI; KOTHANDARAMAN, CHANDRASEKARA; LAM, CHUNG; LIBSCH, FRANK R.; MUNETOH, SEIJI; MURALIDHAR, RAMACHANDRAN; NARAYANAN, VIJAY; PFEIFFER, DIRK; SADANA, DEVENDRA K.; SHAHIDI, GHAVAM G.; WISNIEFF, ROBERT L.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 050457/0615 →
Continuity (2)
Continuation 15389078 · Dec 22, 2016
Related Publication 20200019731A1 · Jan 16, 2020