DRAM interface mode with interruptible internal transfer operation

1. An integrated circuit (IC) memory device, comprising:

an array of storage cells organized into addressable rows and columns;

command interface circuitry to receive an internal transfer command;

transfer logic coupled to the command interface circuitry, the transfer logic responsive to the internal transfer command, to read data from a first portion of the array of storage cells, transfer the data as on-chip transfer data, and write the on-chip transfer data to a second portion of the array of storage cells; and

wherein the transfer logic, in response to the command interface circuitry receiving an interrupt command, is to pause the internal transfer operation involving the first portion of the array of storage cells and the second portion of the array of storage cells, and to carry out an unrelated memory access operation involving at least the first portion of the array of storage cells or the second portion of the array of storage cells.

2. The IC memory device of claim 1 , further comprising:

mode register storage for storing configuration settings associated with the transfer operation.

3. The IC memory device of claim 2 , wherein:

the mode register storage includes fields to store configuration setting values for at least one from the group comprising transfer mode, start transfer, interrupt transfer, abort transfer, transfer size, and stride.

4. The IC memory device of claim 1 , wherein:

the first portion of the array of storage cells comprises a first bank; and

the second portion of the array of storage cells comprises a second bank.

5. The IC memory device of claim 1 , wherein:

the transfer logic, in response to an abort command, terminates the internal transfer operation.

6. The IC memory device of claim 1 , wherein the transfer logic includes:

a write data path selectively interfaced between a set of data input/output (I/O) pins and the array of storage cells;

a read data path selectively interfaced between the set of data input/output (I/O) pins and the array of storage cells; and

a bypass data path selectively coupled between the write data path and the read data path, the bypass data path enabled in response to the command interface circuitry receiving the internal transfer command, and operative to route the read data on-chip from the read data path to the write data path.

7. The IC memory device of claim 1 , further comprising:

state register storage; and

wherein the transfer logic, in response to the command interface circuitry receiving the interrupt command, is to load information indicating a most recent state of the internal transfer operation to the state register storage.

8. The IC memory device of claim 7 , wherein:

the transfer logic, in response to the command interface circuitry receiving a restore command, is to read the stored information from the state register storage and resume the internal transfer operation.

9. A method of operation in an integrated circuit (IC) memory device, the method comprising:

in an internal transfer mode of operation,

receiving an internal transfer command at a command interface;

transferring data on-chip from a first group of storage cells on the IC memory device to a second group of storage cells on the IC memory device in response to the internal transfer command, the transferring comprising

reading stored data from the first group of storage cells,

transferring the data as on-chip transfer data, and

writing the on-chip transfer data to the second group of storage cells;

receiving an interrupt command; and

pausing the transferring in response to receiving the interrupt command, and carrying out an unrelated memory access operation.

10. The method of claim 9 , further comprising:

storing configuration settings associated with the transferring in a mode register.

11. The method of claim 9 , further comprising:

receiving a restore command; and

resuming the transferring in response to the restore command.

12. The method of claim 11 , further comprising:

in response to the interrupt command, loading information indicating a most recent state of the transferring to state register storage; and

reading the state register storage in response to the resume command to resume the transferring.

13. The method of claim 9 , further comprising:

receiving an abort command; and

terminating the transferring in response to the abort command.

14. The method of claim 9 , wherein:

during a normal mode of operation,

interfacing a write data path between a set of data input/output (I/O) pins and the first group of storage cells for write operations involving the first group of storage cells;

interfacing a read data path between the set of data input/output (I/O) pins and the first group of storage cells for read operations involving the first group of storage cells; and

during the internal interface mode of operation,

bypassing the set of data I/O pins to route the read data from the first group of storage cells along the read data path to the write data path for writing to the second group of storage cells.

15. An integrated circuit (IC) dynamic random access (DRAM) memory device comprising:

an array of DRAM storage cells organized into a first bank and a second bank;

command interface circuitry to receive an internal transfer command;

transfer logic coupled to the command interface circuitry, the transfer logic responsive to the internal transfer command, to carry out an internal transfer operation including reading data from the first bank, and writing the data to the second bank, the read data routed solely on-chip; and

wherein the transfer logic, in response to the command interface circuitry receiving an interrupt command, is to pause the internal transfer operation, and to carry out an unrelated memory access operation involving at least the first bank or the second bank.

16. The IC DRAM memory device of claim 15 , further comprising:

mode register storage for storing configuration settings associated with the transfer operation.

17. The IC DRAM memory device of claim 15 , further comprising:

state register storage; and

wherein the transfer logic, in response to the command interface circuitry receiving the interrupt command, is to load information indicating a most recent state of the internal transfer operation to the state register storage.

18. The IC DRAM memory device of claim 17 , wherein:

the transfer logic, in response to the command interface circuitry receiving a restore command, is to read the stored information from the state register storage and resume the internal transfer operation.

19. The IC DRAM memory device of claim 15 , wherein:

the transfer logic, in response to an abort command, terminates the internal transfer operation.

20. The IC memory device of claim 15 , wherein the transfer logic includes:

a write data path selectively interfaced between a set of data input/output (I/O) pins and the array of storage cells;

a read data path selectively interfaced between the set of data input/output (I/O) pins and the array of storage cells; and

a bypass data path selectively coupled between the write data path and the read data path, the bypass data path enabled in response to the command interface circuitry receiving the internal transfer command, and operative to route the read data from the first bank via the bypass path to the write data path without traversing the set of I/O pins.