IP Library Granted Patent US 11,244,836
Granted Patent B2
US 11,244,836 · App. 16/491,276 · Granted Feb 8, 2022

Semiconductor apparatus, power conversion device, and method for manufacturing semiconductor apparatus

Inventor: Keitaro Ichikawa (Tokyo, JP)
Assignee: Mitsubishi Electric Corporation
H01L21/565H01L23/29H01L23/50
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Quick Facts
Patent No.
US 11,244,836
App. No.
16/491,276
Granted
Feb 8, 2022
Kind
B2
Abstract

A semiconductor apparatus according to the invention of the present application includes a base plate, a lead frame having a first surface and a second surface being a surface opposite to the first surface, the second surface being bonded to an upper surface of the base plate, a semiconductor device provided on the first surface of the lead frame, and a mold resin covering the upper surface of the base plate, the lead frame, and the semiconductor device, wherein the mold resin is provided with a terminal insertion hole that extends from the surface of the mold resin to the lead frame and in which a press-fit terminal is inserted, and the lead frame is provided with an opening portion which intercommunicates with the terminal insertion hole and into which the press-fit terminal is press-fitted.

Claims (47)

1. A semiconductor apparatus comprising:

a conductive base plate;

a lead frame having a first surface and a second surface that is a surface opposite to the first surface, the second surface being bonded to an upper surface of the base plate;

a semiconductor device provided on the first surface of the lead frame; and

a mold resin that covers the upper surface of the base plate, the lead frame, and the semiconductor device,

wherein the mold resin is provided with a terminal insertion hole which extends from a surface of the mold resin to the lead frame and into which a press-fit terminal is inserted,

the lead frame is provided with an opening portion which intercommunicates with the terminal insertion hole and into which the press fit terminal is press-fitted such that a bottom end of the press fit terminal is below a top surface of the base plate,

an end portion of the lead frame is not exposed from a side surface of the mold resin forming an outer shell of the mold resin, and

the base plate includes an insulating layer on the lead frame side.

2. The semiconductor apparatus according to claim 1 , wherein the end portion of the lead frame is covered by the mold resin.

3. The semiconductor apparatus according to claim 1 , wherein the terminal insertion hole extends from a surface facing the first surface of the mold resin to the first surface, and the press-fit terminal is press-fitted into the opening portion from a side of the first surface.

4. The semiconductor apparatus according to claim 1 , further comprising the press-fit terminal that is provided with a first press-fit portion having an elastic force and a second press-fit portion having an elastic force at each of both ends thereof, and is inserted in the terminal insertion hole,

wherein the first press-fit portion is press-fitted in the opening portion, and

the second press-fit portion is provided outside the mold resin.

5. The semiconductor apparatus according to claim 4 , wherein the press-fit terminal has a bending portion between the first press-fit portion and the second press-fit portion,

positions of the first press-fit portion and the second press-fit portion are displaced from each other in a horizontal direction due to the bending portion, and

the bending portion is provided outside the mold resin.

6. The semiconductor apparatus according to claim 5 , wherein the second press-fit portion is provided outward in the horizontal direction with respect to the first press-fit portion.

7. The semiconductor apparatus according to claim 5 , wherein the second press-fit portion is provided inward in the horizontal direction with respect to the first press-fit portion.

8. The semiconductor apparatus according to claim 1 , wherein the semiconductor device is made with a wide bandgap semiconductor.

9. The semiconductor apparatus according to claim 8 , wherein the wide bandgap semiconductor is silicon carbide, a gallium-nitride-based material or diamond.

10. A power conversion device comprising:

a main conversion circuit that includes the semiconductor apparatus according to claim 1 , converts input power and outputs the converted input power; and

a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

11. A semiconductor apparatus comprising:

a conductive base plate;

a lead frame having a first surface and a second surface that is a surface opposite to the first surface, the second surface being bonded to an upper surface of the base plate;

a semiconductor device provided on the first surface of the lead frame; and

a mold resin that covers the upper surface of the base plate, the lead frame, and the semiconductor device,

wherein the mold resin is provided with a terminal insertion hole which extends from a surface of the mold resin past the lead frame to a depth below a top surface of the base plate and the semiconductor device, and into which a press-fit terminal is inserted

the lead frame is provided with an opening portion which intercommunicates with the terminal insertion hole and into which the press fit terminal is press-fitted, and

the base plate includes an insulating layer on the lead frame side.

12. The semiconductor apparatus according to claim 11 , wherein an end portion of the lead frame is covered by the mold resin.

13. The semiconductor apparatus according to claim 11 , wherein the terminal insertion hole extends from a surface facing the first surface of the mold resin to the first surface, and the press-fit terminal is press-fitted into the opening portion from a side of the first surface.

14. The semiconductor apparatus according to claim 11 , further comprising the press-fit terminal that is provided with a first press-fit portion having an elastic force and a second press-fit portion having an elastic force at each of both ends thereof, and is inserted in the terminal insertion hole,

wherein the first press-fit portion is press-fitted in the opening portion, and

the second press-fit portion is provided outside the mold resin.

15. The semiconductor apparatus according to claim 14 , wherein the press-fit terminal has a bending portion between the first press-fit portion and the second press-fit portion,

positions of the first press-fit portion and the second press-fit portion are displaced from each other in a horizontal direction due to the bending portion, and

the bending portion is provided outside the mold resin.

16. The semiconductor apparatus according to claim 15 , wherein the second press-fit portion is provided outward in the horizontal direction with respect to the first press-fit portion.

17. The semiconductor apparatus according to claim 15 , wherein the second press-fit portion is provided inward in the horizontal direction with respect to the first press-fit portion.

18. The semiconductor apparatus according to claim 11 , wherein the semiconductor device is made with a wide bandgap semiconductor.

19. The semiconductor apparatus according to claim 18 , wherein the wide bandgap semiconductor is silicon carbide, a gallium-nitride-based material or diamond.

20. A power conversion device comprising:

a main conversion circuit that includes the semiconductor apparatus according to claim 11 , converts input power and outputs the converted input power; and

a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 5, 2019
From: ICHIKAWA, KEITARO
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 050279/0566 →
Continuity (1)
Related Publication 20200303215A1 · Sep 24, 2020