Double patterning interconnect integration scheme with SAV
A method is presented for forming self-aligned vias by employing top level line double patterns. The method includes forming a plurality of first conductive lines within a first dielectric material, recessing one or more of the plurality of first conductive lines to define first openings, filling the first openings with a second dielectric material, and forming sacrificial blocks perpendicular to the plurality of first conductive lines. The method further includes forming vias directly underneath the sacrificial blocks, removing the sacrificial blocks, and constructing a plurality of second conductive lines such that the vias align to both the plurality of first conductive lines and the plurality of second conductive lines.
1. A method for forming self-aligned vias by employing top level line double patterns, the method comprising:
forming a plurality of first conductive lines of different lengths in parallel to each other within a first dielectric material such that only a single first conductive line of the plurality of first conductive lines is centrally disposed within the first dielectric material;
recessing one or more of the plurality of first conductive lines to create first openings and to define a first set of recessed first conductive lines and a second set of non-recessed first conductive lines;
filling the first openings with a second dielectric material such that top surfaces of the second set of non-recessed first conductive lines remain exposed;
forming sacrificial blocks perpendicular to the plurality of first conductive lines such that the top surfaces of the second set of non-recessed first conductive lines directly contact the sacrificial blocks;
forming vias directly underneath the sacrificial blocks by recessing the second set of non-recessed first conductive lines such that dual vias are formed from the centrally disposed single first conductive line;
removing the sacrificial blocks; and
constructing a plurality of second conductive lines such that the vias align to both the plurality of first conductive lines and the plurality of second conductive lines,
wherein the dual vias of the centrally disposed single first conductive line are horizontally aligned with all the other vias formed underneath the sacrificial blocks.
2. The method of claim 1 , further comprising depositing a block mask before recessing the one or more of the plurality of first conductive lines.
3. The method of claim 1 , wherein recessing the second set of non-recessed first conductive lines creates second openings.
4. The method of claim 3 , further comprising filling the second openings with a third dielectric material.
5. The method of claim 4 , wherein the first, second, and third dielectric materials are constructed from a same material.
6. The method of claim 1 , wherein the sacrificial blocks are formed by etching a sacrificial material deposited over the second dielectric material.
7. The method of claim 1 , wherein the plurality of first conductive lines are perpendicular to the plurality of second conductive lines.
8. The method of claim 1 , wherein a dimension of the vias automatically matches dimensions for the plurality of first and second conductive lines.
9. The method of claim 1 , wherein the vias are formed before constructing the plurality of second conductive lines.
10. A method for forming self-aligned vias by employing top level line double patterns, the method comprising:
forming a plurality of first conductive lines of different lengths in parallel to each other within a first dielectric material such that only a single first conductive line of the plurality of first conductive lines is centrally disposed within the first dielectric material;
depositing a block mask over one or more of the plurality of first conductive lines;
recessing exposed conductive lines of the plurality of first conductive lines to create first gaps and to define a first set of recessed first conductive lines and a second set of non-recessed first conductive lines;
removing the block mask;
filling the first gaps with a second dielectric material such that top surfaces of the second set of non-recessed first conductive lines remain exposed;
forming sacrificial blocks perpendicular to the plurality of first conductive lines such that the top surfaces of the second set of non-recessed first conductive lines directly contact the sacrificial blocks;
recessing the second set of non-recessed first conductive lines to create second gaps and vias such that dual vias are formed from the centrally disposed single first conductive line;
filling the second gaps with a third dielectric material;
forming trenches within the third dielectric material;
removing the sacrificial blocks to define third gaps; and
filling the trenches and the third gaps with a conductive material to define a plurality of second conductive lines such that the vias align to both the plurality of first conductive lines and the plurality of second conductive lines,
wherein the dual vias of the centrally disposed single first conductive line are horizontally aligned with all the other vias formed from the recessing of the second set of non-recessed first conductive lines.
11. The method of claim 10 , wherein the sacrificial blocks are perpendicular to the plurality of first conductive lines.
12. The method of claim 10 , wherein the first, second, and third dielectric materials are constructed from a same material.
13. The method of claim 10 , wherein the trenches are parallel to the sacrificial blocks.
14. The method of claim 10 , wherein the plurality of first conductive lines are perpendicular to the plurality of second conductive lines.
15. The method of claim 10 , wherein a dimension of the vias automatically matches dimensions for the plurality of first and second conductive lines.
16. The method of claim 10 , wherein the vias are formed before constructing the plurality of second conductive lines.