Electronic device package
An electronic device package includes a package substrate, an interposer located above the package substrate and electrically connected to the package substrate, a processing device located above the interposer and electrically connected to the interposer, at least one high bandwidth memory device located above the interposer and electrically connected to the interposer and the processing device, a power management integrated circuit device located above the interposer and electrically connected to the interposer and the processing device, and a passive device located on or inside the interposer and electrically connected to the power management integrated circuit device.
1. An electronic device package comprising:
a package substrate;
an interposer located above the package substrate and electrically connected to the package substrate;
a processing device located above the interposer and electrically connected to the interposer;
at least one high bandwidth memory device located above the interposer and electrically connected to the interposer and the processing device;
a power management integrated circuit device located above the interposer and electrically connected to the interposer and the processing device; and
a passive device located on or inside the interposer and electrically connected to the power management integrated circuit device,
wherein the passive device comprises an inductor having an upper magnetic layer and a lower magnetic layer respectively disposed above and under the interposer, through-silicon vias connecting the upper magnetic layer to the lower magnetic layer, and a redistribution layer connecting the through-silicon vias.
2. The electronic device package of claim 1 , wherein the passive device comprises the inductor located inside the interposer and below at least a portion of the power management integrated circuit device.
3. The electronic device package of claim 1 , wherein the at least one high bandwidth memory device comprises a stack of chips, and a chip through-silicon via connecting the chips.
4. The electronic device package of claim 1 , wherein the interposer has an interposer body and a through-via extending through the interposer body and electrically connecting the at least one high bandwidth memory device to the package substrate.
5. The electronic device package of claim 1 , wherein the interposer has an interposer body and a through silicon via through-via extending through the interposer body and electrically connecting the processing device to the package substrate.
6. The electronic device package of claim 1 , wherein the processing device is laterally spaced from the power management integrated circuit device and the at least one high bandwidth memory device.
7. The electronic device package of claim 6 , wherein the interposer has an interposer body, and an interconnection layer in the interposer body and electrically connecting the processing device to the power management integrated circuit device and the at least one high bandwidth memory device.
8. An electronic device package comprising:
a package substrate including a substrate body having a top surface and a bottom surface;
first connection terminals disposed on the substrate body and dedicated to electrically connect the electronic device package to an external device;
second connection terminals disposed on the top surface of the substrate body;
an interposer disposed on the top surface of the substrate body of the package substrate and electrically connected to the package substrate by the second connection terminals, the interposer including an interposer body and through-vias extending vertically through the interposer body;
a processor disposed above the interposer and electrically connected to the through-vias of the interposer;
at least one high bandwidth memory disposed above the interposer and electrically connected to the processor by the interposer;
a power management integrated circuit electrically connected to the processor; and
a passive electronic component disposed within the interposer body of the interposer and below at least a portion of the power management integrated circuit device and electrically connected to the power management integrated circuit,
wherein the passive electronic component comprises an inductor having an upper magnetic layer and a lower magnetic layer respectively disposed above and under the interposer, through-silicon vias connecting the upper magnetic layer to the lower magnetic layer, and a redistribution layer connecting the through-silicon vias.
9. The electronic device package of claim 8 , wherein the interposer has an interconnection layer in the interposer body and electrically connecting the processor to the power management integrated circuit and the at least one high bandwidth memory.
10. An electronic device package comprising:
a package substrate;
a lower interposer located above the package substrate and electrically connected to the package substrate;
an intermediate interposer located above the lower interposer and electrically connected to the lower interposer;
an upper interposer located above the intermediate interposer and electrically connected to the intermediate interposer;
a processing device located above the upper interposer and electrically connected to the upper interposer;
at least one high bandwidth memory device located above the upper interposer and electrically connected to the processing device;
a power management integrated circuit device located inside the intermediate interposer and electrically connected to the upper interposer and the processing device; and
a passive device located inside the lower interposer and the intermediate interposer and electrically connected to the power management integrated circuit device,
wherein the passive device comprises a lower inductor and an intermediate inductor,
wherein the lower inductor comprises a plurality of lower through-silicon vias and a lower redistribution layer that are located inside the lower interposer, the lower redistribution layer connecting the plurality of lower through-silicon vias, and
the intermediate inductor comprises a plurality of intermediate through-silicon vias and an intermediate redistribution layer that are located inside the intermediate interposer, the intermediate redistribution layer connecting the plurality of intermediate through-silicon vias.
11. The electronic device package of claim 10 , wherein the at least one high bandwidth memory device is electrically connected to the package substrate through through-silicon vias located inside the lower interposer, the intermediate interposer, and the upper interposer.
12. The electronic device package of claim 10 , wherein the processing device is electrically connected to the package substrate through through-silicon vias located inside the lower interposer, the intermediate interposer, and the upper interposer.