SOI device structure for robust isolation
This disclosure provides for robust isolation across the SOI structure. In contrast to forming a charge trap layer in specific areas on the structure, a charge trap layer may be built across the insulating/substrate interface. The charge trap layer may be an implantation layer formed throughout and below the insulation layer. Devices built on this SOI structure have reduced cross-talk between the devices. Due to the uniform structure, isolation is robust across the structure and not confined to certain areas. Additionally, deep trench implantation is not required to form the structure, eliminating cost. The semiconductor-on-insulator substrate may include an active silicon layer over an oxide layer. The oxide layer may be over a charge trap layer. The charge trap layer may be over a silicon substrate.
1. A semiconductor device, comprising:
a semiconductor substrate;
a semiconductor isolation layer fully overlaying the semiconductor substrate;
an oxide layer fully overlaying the semiconductor isolation layer; and
one or more device features formed over the oxide layer
wherein the isolation layer is implanted silicon.
2. The semiconductor device of claim 1 , wherein the silicon substrate has a resistivity between 1,000 ohm-cm and 10,000 ohm-cm.
3. The semiconductor device of claim 1 , wherein the semiconductor isolation layer is formed by an implanted species selected from a group consisting of Xe, Ar, GE, and Si.
4. The semiconductor device of claim 1 , wherein a thickness of the semiconductor isolation layer is between about 5 nm and about 300 nm.
5. The semiconductor device of claim 1 , further comprising a source, a gate, and a drain over the active silicon layer.
6. The semiconductor device of claim 5 , wherein the source,
the gate, and the drain are in direct contact with the active silicon layer.
7. A semiconductor device, comprising:
a semiconductor substrate;
a semiconductor isolation layer extending along an entirety of an active region;
a buried oxide layer fully overlaying the semiconductor isolation layer; and
one or more device features formed over the buried oxide layer in the active region wherein the isolation layer is implanted silicon.
8. The semiconductor device of claim 7 , wherein a thickness of the semiconductor isolation layer is between about 5 nm and about 300 nm.
9. The semiconductor device of claim 7 , wherein the buried oxide layer is directly in contact with the active region.
10. A semiconductor device, comprising:
a semiconductor substrate;
a semiconductor isolation layer fully overlaying the semiconductor substrate;
an oxide layer fully overlaying the semiconductor isolation layer;
a first epitaxial layer bonded to the oxide layer through thermal annealing; and
a second epitaxial layer between the first epitaxial layer and the semiconductor isolation layer.
11. The semiconductor device of claim 10 , wherein the silicon substrate has a resistivity between 1,000 ohm-cm and 10,000 ohm-cm.
12. The semiconductor device of claim 10 , wherein the semiconductor isolation layer is formed by an implanted species selected from a group consisting of Xe, Ar, GE, and Si.
13. The semiconductor device of claim 10 , wherein a thickness of the semiconductor isolation layer is between about 5 nm and about 300 nm.
14. The semiconductor device of claim 10 wherein the first epitaxial layer is silicon germanium.
15. The semiconductor device of claim 10 wherein the second epitaxial layer is silicon germanium.
16. The semiconductor device of claim 7 , wherein the silicon substrate has a resistivity between 1,000 ohm-cm and 10,000 ohm-cm.
17. The semiconductor device of claim 7 , wherein the semiconductor isolation layer is formed by an implanted species selected from a group consisting of Xe, Ar, Ge, and Si.
18. The semiconductor device of claim 17 , wherein the semiconductor isolation layer is formed by implanted Xe.
19. The semiconductor device of claim 7 , further comprising a source, a gate, and a drain over the active silicon layer.