Polishing composition

1. A polishing composition used for polishing a material having a Vickers hardness of 1500 Hv or higher, the polishing composition comprising:

an abrasive consisting of an alumina abrasive;

an oxidizing agent as a polishing aid; and

water,

wherein:

the oxidizing agent is one or more permanganates;

the alumina abrasive has an isoelectric point that is below 8.0 and is lower than the pH of the polishing composition; and

the isoelectric point of the alumina abrasive is higher than an isoelectric point of the material subject to polishing.

2. The polishing composition according to claim 1 , wherein the isoelectric point of the alumina abrasive is 5.0 to 7.0.

3. The polishing composition according to claim 1 , wherein the pH is 8.0 or higher.

4. The polishing composition according to claim 1 , wherein the material subject to polishing is silicon carbide.

5. The polishing composition according to claim 1 , wherein pH com minus IEP A1 (pH com -IEP A1 ) is 4.5 or less, wherein the pH com represents the pH of the polishing composition and the IEP A1 represents the isoelectric point of the alumina abrasive.

6. The polishing composition according to claim 1 , wherein a relationship between IEP A1 and pH com satisfies 0.6≤IEP A1 /pH com ≤0.8, wherein the IEP A1 represents the isoelectric point of the alumina abrasive and the pH com represents the pH of the polishing composition.

7. The polishing composition according to claim 1 , wherein a relationship between IEP A1 and IEP B satisfies 1.2≤IEP A1 /IEP B ≤3, wherein the IEP A1 represents the isoelectric point of the alumina abrasive and the IEP B represents the isoelectric point of the material subject to polishing.

8. The polishing composition according to claim 1 , wherein IEP A1 minus IEP B (IEP A1 -IEP B ) is 1.5 or greater and 4.5 or less, wherein the IEP A1 represents the isoelectric point of the alumina abrasive and the IEP B represents the isoelectric point of the material subject to polishing.

9. A method for producing a polished object, the method comprising polishing an object having a Vickers hardness of 1500 Hv or higher by supplying the polishing composition according to claim 1 to the object.

10. The method according to claim 9 , wherein the object is formed of diamond, sapphire, silicon carbide, boron carbide, zirconium carbide, tungsten carbide, silicon nitride, or gallium nitride.

11. The method according to claim 9 , wherein the object has a surface to be polished, the surface being formed of silicon carbide.

12. The method according to claim 9 , wherein the object has a surface to be polished, the surface being a single crystal silicon carbide.