Metallic structure for optical semiconductor device, method for producing the same, and optical semiconductor device using the same
A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 μm or more and 0.01 μm or less.
1. A metallic structure for an optical semiconductor device, comprising a base body having disposed thereon at least in part metallic layers in the following order;
a nickel or nickel alloy plated layer,
a gold or gold alloy plated layer, and
a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 μm or more and 0.01 μm or less, and
further comprising a rhodium, palladium, rhodium alloy, or palladium alloy plated layer disposed between the nickel or nickel alloy plated layer and the gold or gold alloy plated layer.
2. The metallic structure for an optical semiconductor device according to claim 1 , wherein a thickness of the nickel or nickel alloy plated layer is in a range of 0.5 μm or more and 10 μm or less.
3. The metallic structure for an optical semiconductor device according to claim 1 , wherein a thickness of the nickel or nickel alloy plated layer is in a range of 1 μm or more and 10 μm or less.
4. The metallic structure for an optical semiconductor device according to claim 1 , wherein a thickness of the gold or gold alloy plated layer is in a range of 0.01 μm or more and 1 μm or less.
5. The metallic structure for an optical semiconductor device according to claim 1 , wherein a thickness of the rhodium, palladium, rhodium alloy, or palladium alloy plated layer is in a range of 0.01 μm or more and 0.3 μm or less.
6. The metallic structure for an optical semiconductor device according to claim 1 , wherein a reflectance with respect to light having a light emission peak wavelength at 455 nm is in a range of 25% or more and 55% or less.
7. The metallic structure for an optical semiconductor device according to claim 1 , wherein a b* value in the L*a*b* color system is in a range of 35 or more and 55 or less.
8. An optical semiconductor device, wherein a light emitting element is mounted on a lead frame or a substrate composed of the metallic structure for an optical semiconductor device according to claim 1 .
9. A method for producing a metallic structure for an optical semiconductor device according to claim 1 , which comprises forming metallic layers on a base body in a following order of steps
forming a nickel or nickel alloy plated layer on the base body,
optionally forming a rhodium, palladium, rhodium alloy, or palladium alloy plated layer on the nickel or nickel alloy plated layer,
forming a gold or gold alloy plated layer on the nickel or nickel alloy plated layer or optionally on the rhodium, palladium, rhodium alloy, or palladium alloy plated layer if it is present, and
forming a silver or silver alloy plated layer on the gold or gold alloy plated layer
wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 μm or more and 0.01 μm or less.
10. The method for producing a metallic structure for an optical semiconductor device according to claim 9 , further comprising a step of heat treating the metallic structure at a temperature in a range of 200° C. or more and 450° C. or less for a treatment time in a range of 5 minutes or more and 2 hours or less.
11. The method for producing a metallic structure for an optical semiconductor device according to claim 9 , wherein the steps of forming layers are performed according to an electrolytic plating method or a non-electrolytic plating method.
12. The method for producing a metallic structure for an optical semiconductor device according to claim 9 , wherein a plating solution comprising silver potassium cyanide or silver cyanide in an amount in a range of 0.1 g/L or more and 10 g/L or less in terms of silver concentration and potassium cyanide or sodium cyanide in an amount in a range of 0.5 g/L or more and 150 g/L or less is used in the step of forming a silver or silver alloy plated layer.
13. The method for producing a metallic structure for an optical semiconductor device according to claim 12 , wherein the plating solution comprises at least one kind of an electrically conductive salt selected from the group consisting of carbonates, phosphates, nitrates, citrates, and sulfates in an amount in a range of 5 g/L or more and 150 g/L or less.
14. The method for producing a metallic structure for an optical semiconductor device according to claim 12 , wherein electrolytic plating is performed using the plating solution under conditions where a liquid temperature of the plating solution is in a range of 20° C. or more and 70° C. or less, a soluble electrode composed of silver or a silver alloy is used as an anode, a stainless, platinum, or platinum-covered titanium electrode is used as a cathode, a cathode current density is in a range of 0.1 A/dm 2 or more and 15 A/dm 2 or less, and a plating time is in a range of 1 second or more and 1 minute or less in the step of forming a silver or silver alloy plated layer.