Emissive nanocrystal particle, method of preparing the same and device including emissive nanocrystal particle
An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.
1. A nanocrystal particle comprising:
a core comprising a first semiconductor nanocrystal comprising a Group III-V compound; and
a shell comprising a second semiconductor nanocrystal surrounding the core,
wherein the nanocrystal particle comprises a Group IA element,
the Group IA element comprises lithium, sodium, potassium, rubidium, cesium, or a combination thereof,
the shell comprises a material having a different composition from the first semiconductor nanocrystal and having a larger bandgap than the first semiconductor nanocrystal,
the core comprises the Group IA element, and
the shell does not comprise the Group IA element.
2. The nanocrystal particle of claim 1 , wherein the Group IA element is present in a doped state or in a form of a metal salt other than a halide salt.
3. The nanocrystal particle of claim 2 , wherein the metal salt comprises an inorganic metal salt comprising phosphate, nitrate, carbonate, or a combination thereof.
4. The nanocrystal particle of claim 2 , wherein the metal salt comprises an organic metal salt.
5. The nanocrystal particle of claim 4 , wherein the organic metal salt comprises a metal carboxylate, a metal thiolate, or a combination thereof.
6. The nanocrystal particle of claim 1 , wherein the Group IA element is present in gaps of a crystal structure of the first semiconductor nanocrystal or is present inside an interstice between lattices of the first semiconductor nanocrystal.
7. The nanocrystal particle of claim 1 , wherein the Group IA element is present in an amount of greater than or equal to about 0.05 mol and less than or equal to about 20 mol based on 100 mol of the first semiconductor nanocrystal.
8. The nanocrystal particle of claim 1 , wherein the Group IA element is present in an amount of greater than or equal to about 0.03 parts by weight and less than or equal to about 20 parts by weight based on 100 parts by weight of the first semiconductor nanocrystal.
9. The nanocrystal particle of claim 1 , wherein the Group IA element is present in an amount of greater than or equal to about 0.001 mol and less than or equal to about 20 mol based on 100 mol of the nanocrystal particle.
10. The nanocrystal particle of claim 1 , wherein the Group IA element is present in an amount of greater than or equal to about 0.001 parts by weight and less than or equal to about 20 parts by weight based on 100 parts by weight of the nanocrystal particle.
11. The nanocrystal particle of claim 1 , wherein the Group III-V compound comprises a binary element compound comprising GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, or a combination thereof; a ternary element compound comprising GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb, or a combination thereof; or a quaternary element compound comprising GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or a combination thereof.
12. The nanocrystal particle of claim 1 , wherein the shell comprises a multi-layered shell having at least two layers wherein each of the layers has a different composition.
13. The nanocrystal particle of claim 12 , wherein
the multi-layered shell comprises a first shell adjacent to the core and a second shell surrounding the first shell, and
a bandgap of the first shell is larger than a bandgap of the core and less than a bandgap of the second shell.
14. The nanocrystal particle of claim 1 , wherein the nanocrystal particle further comprises a ligand compound attached to a surface of the nanocrystal particle.
15. The nanocrystal particle of claim 14 , wherein the ligand compound comprises RCOOH, RNH 2 , R 2 NH, R 3 N, RSH, R 3 PO, R 3 P, ROH, RCOOR′, RPO(OH) 2 , R 2 POOH, wherein, R and R′ are the same or different, and are independently a C1 to C24 alkyl group, a C2 to C24 alkenyl group, or a C6 to C20 aryl group, or a combination thereof.
16. A composite structure comprising:
a polymer matrix; and
the nanocrystal particle of claim 1 dispersed in the polymer matrix.
17. The composite structure of claim 16 , wherein the polymer matrix comprises a thiol-ene polymer, a (meth)acrylate polymer, a urethane resin, an epoxy resin, a vinyl polymer, a silicone resin, or a combination thereof.
18. A device comprising the nanocrystal particle of claim 1 .
19. The device of claim 18 , wherein the device comprises:
a light source; and
a photoconversion layer disposed on the light source,
wherein the photoconversion layer comprises the nanocrystal particle.
20. The device of claim 18 , wherein the device comprises a lower electrode, an upper electrode facing the lower electrode, and an emission layer between the lower electrode and the upper electrode,
wherein the emission layer comprises the nanocrystal particle.
21. The nanocrystal particle of claim 1 , wherein the core comprises In and P.
22. The nanocrystal particle of claim 1 , wherein the Group IA element is lithium.
23. The nanocrystal particle of claim 22 , wherein the core comprises In and P.
24. The nanocrystal particle of claim 1 , wherein the Group IA element is sodium.
25. The nanocrystal particle of claim 24 , wherein the core comprises In and P.
26. The nanocrystal particle of claim 1 , wherein the nanocrystal particle emits light in a wavelength ranging from about 400 nm to about 700 nm.
27. The nanocrystal particle of claim 1 , wherein the nanocrystal particle has a quantum yield of greater than about 70%.
28. A composite structure comprising:
a plurality of layers,
wherein at least one of the plurality of layers comprises
a polymer matrix; and
the nanocrystal particle of claim 1 dispersed in the polymer matrix.
29. The composite structure of claim 28 , wherein at least one of the plurality of layers comprises a barrier material or at least one of the plurality of layers is a barrier layer.
30. A nanocrystal particle comprising:
a core comprising a first semiconductor nanocrystal comprising a Group III-V compound; and
a shell comprising a second semiconductor nanocrystal surrounding the core,
wherein the nanocrystal particle comprises a Group IA element,
the Group IA element comprises lithium, sodium, potassium, rubidium, cesium, or a combination thereof, and
the shell comprises a material having a different composition from the first semiconductor nanocrystal and having a larger bandgap than the first semiconductor nanocrystal, and
wherein the nanocrystal particle has a full width at half maximum of less than or equal to about 45 nanometers in its photoluminescent spectrum.