Proton-based two-terminal volatile memristive devices
Technologies relating to crossbar array circuits with proton-based two-terminal volatile memristive devices are disclosed. An example apparatus includes: a first bottom conductive layer, a first switching oxide layer formed on the first bottom conductive layer, a first top conductive layer formed on the first switching oxide layer, an intermediate layer formed on the first top conductive layer, a second bottom conductive layer formed on the intermediate layer, a second oxide layer whose conductance can be modulated by H-dopant formed on the second bottom conductive layer; and a proton reservoir layer formed on the second oxide layer, wherein the second bottom conductive layer is H-doped.
1. An apparatus comprising:
a first bottom conductive layer;
a first switching oxide layer formed on the first bottom conductive layer;
a first top conductive layer formed on the first switching oxide layer;
an intermediate layer formed on the first top conductive layer;
a second bottom conductive layer formed on the intermediate layer;
a second oxide layer whose conductance is modulated by H-dopant formed on the second bottom conductive layer; and
a proton reservoir layer formed on the second oxide layer, wherein the second bottom conductive layer is H-doped, wherein the proton reservoir layer comprises at least one of Cr 2 O 3 or PdH 4 .
2. The apparatus as claimed in claim 1 , wherein the first bottom conductive layer is made of one or more materials that are selected from Pd, Pt, Ir, W, Ta, Hf, Nb, V, Ti, TiN, TaN, NbN, a combination thereof, and an alloy of any of these materials with another conductive material.
3. The apparatus as claimed in claim 1 , wherein the first switching oxide layer is made of one or more materials that are selected from TaO x (where x≤2.5), HfO x (where x≤2), TiO x (where x≤2), or a combination thereof.
4. The apparatus as claimed in claim 1 , wherein the first top conductive layer is made of one or more materials that are selected from Pd, Pt, Ir, W, Ta, Hf, Nb, V, Ti, TiN, TaN, NbN, a combination thereof, and an alloy of any of these materials with another conductive material.
5. The apparatus as claimed in claim 1 , wherein the intermediate layer is made of one or more materials that are selected from such metals as W, Al, Cu, Pt, Ir, Ru, Pd, or Au, such metal compounds as TiN, TaN, WN, RuO 2 , or IrO 2 , a combination thereof, and an alloy of any of these materials with another conductive material.
6. The apparatus as claimed in claim 1 , wherein the second bottom conductive layer is made of one or more materials that are selected from TiN, Pt, TaN, Al, Ni, a combination thereof, and an alloy of any of these materials with another conductive material.
7. The apparatus as claimed in claim 1 , wherein a conductance of the second oxide layer is modulated by H-dopant, and wherein the second oxide layer comprises at least one of WO 3 , TiO 2 , VO 2 , Nb 2 O 5 , Ta 2 O 5 , or HfO 2 .
8. The apparatus as claimed in claim 1 , wherein the apparatus is configured to perform a neuron's function.