Polycrystalline silicon manufacturing apparatus

1. A polycrystalline silicon manufacturing apparatus, using Siemens method, comprising:

an insulating member having an integrated sleeve structure provided between an electrode configured to feed power to a silicon core wire and a bottom plate part,

wherein

the insulating member has a shape provided with a flange part at an upper part of a straight part,

at least part of the flange part of the insulating member is fit between a lower surface of a flange part of the electrode and an upper surface of the bottom plate part, and at least part of the straight part of the insulating member is fit between a straight part of the electrode and a side surface of a through-hole part provided in the bottom plate part,

sealing members are arranged on two or more areas on at least part of the straight part of the insulating member, and

one of the sealing members is arranged between a side surface of the straight part of the electrode and an inner side surface of the straight part of the insulating member, and another one of the sealing members is arranged between the side surface of the through-hole part and an outer side surface of the straight part of the insulating member, and the one of the sealing members is positioned at the same height level as the another one of the sealing members with the straight part of the insulating member therebetween.

2. The polycrystalline silicon manufacturing apparatus according to claim 1 , wherein the sealing member are arranged on at least part of the flange part of the insulating member and on at least part of the straight part of the insulating member respectively.

3. The polycrystalline silicon manufacturing apparatus according to claim 1 , wherein the sealing members are arranged on two or more areas on at least part of the flange part of the insulating member.