Extreme ultraviolet light generation system and electronic device manufacturing method
An extreme ultraviolet light generation system may include a laser system emitting first prepulse laser light, second prepulse laser light, and main pulse laser light in this order; a chamber including at least one window for introducing, into the chamber, the first prepulse laser light, the second prepulse laser light, and the main pulse laser light; a target supply unit supplying a target to a predetermined region in the chamber; and a processor controlling the laser system to irradiate the target with the first prepulse laser light, irradiate the target, having been irradiated with the first prepulse laser light, with the second prepulse laser light having a pulse time width longer than a pulse time width of the main pulse laser light, and irradiate the target, having been irradiated with the second prepulse laser light, with the main pulse laser light temporally separated from the second prepulse laser light.
1. An extreme ultraviolet light generation system, comprising:
a laser system configured to emit first prepulse laser light, second prepulse laser light, and main pulse laser light in this order;
a chamber including at least one window for introducing, into the chamber, the first prepulse laser light, the second prepulse laser light, and the main pulse laser light;
a target supply unit configured to supply a target to a predetermined region in the chamber; and
a processor configured to control the laser system so as to irradiate the target with the first prepulse laser light, irradiate the target, having been irradiated with the first prepulse laser light, with the second prepulse laser light having a pulse time width longer than a pulse time width of the main pulse laser light, and irradiate the target, having been irradiated with the second prepulse laser light, with the main pulse laser light temporally separated from the second prepulse laser light.
2. The extreme ultraviolet light generation system according to claim 1 ,
wherein the pulse time width of the second prepulse laser light is within a range of 10 ns to 80 ns.
3. The extreme ultraviolet light generation system according to claim 1 ,
wherein the pulse time width of the second prepulse laser light is within a range of 30 ns to 50 ns.
4. The extreme ultraviolet light generation system according to claim 1 ,
wherein fluence of the second prepulse laser light at a position of the target when the target is irradiated with the second prepulse laser light is within a range of 1.5 J/cm 2 to 4.4 J/cm 2 .
5. The extreme ultraviolet light generation system according to claim 1 ,
wherein fluence of the second prepulse laser light at a position of the target when the target is irradiated with the second prepulse laser light is within a range of 2.5 J/cm 2 to 3.4 J/cm 2 .
6. The extreme ultraviolet light generation system according to claim 1 ,
wherein the pulse time width of the first prepulse laser light is less than 1 ns, and fluence of the first prepulse laser light at a position of the target when the target is irradiated with the first prepulse laser light is within a range of 2.0 J/cm 2 to 20 J/cm 2 .
7. The extreme ultraviolet light generation system according to claim 1 ,
wherein the pulse time width of the first prepulse laser light is less than 1 ns, and fluence of the first prepulse laser light at a position of the target when the target is irradiated with the first prepulse laser light is within a range of 7.5 J/cm 2 to 15.1 J/cm 2 .
8. The extreme ultraviolet light generation system according to claim 1 ,
wherein the pulse time width of the first prepulse laser light is 1 ns or more, and fluence of the first prepulse laser light at a position of the target when the target is irradiated with the first prepulse laser light is within a range of 60 J/cm 2 to 78 J/cm 2 .
9. The extreme ultraviolet light generation system according to claim 1 ,
wherein a dimension of the target at timing of irradiating the target with the second prepulse laser light is within a range of 15% to 64% of a dimension of a beam cross section of the second prepulse laser light at a position of the target.
10. The extreme ultraviolet light generation system according to claim 1 ,
wherein a dimension of the target at timing of irradiating the target with the second prepulse laser light is within a range of 27% to 50% of a dimension of a beam cross section of the second prepulse laser light at a position of the target.
11. The extreme ultraviolet light generation system according to claim 1 ,
wherein the laser system includes a first prepulse laser configured to emit the first prepulse laser light, a second prepulse laser configured to emit the second prepulse laser light, an optical pulse stretcher arranged on an optical path of the second prepulse laser light, and a main pulse laser configured to emit the main pulse laser light.
12. The extreme ultraviolet light generation system according to claim 1 ,
wherein the laser system includes a first laser device configured to emit the first prepulse laser light, and a second laser device configured to emit the second prepulse laser light and the main pulse laser light, and
the second laser device includes CO 2 gas laser amplifiers, a first master oscillator configured to emit first seed light having a first amplification wavelength among a plurality of amplification wavelengths of the CO 2 gas laser amplifiers, a second master oscillator configured to emit second seed light having a second amplification wavelength among the plurality of amplification wavelengths and having a pulse time width shorter than that of the first seed light, and a beam combiner configured to cause the first seed light and the second seed light to enter the CO 2 gas laser amplifier.
13. An electronic device manufacturing method, comprising:
generating extreme ultraviolet light using an extreme ultraviolet light generation system;
emitting the extreme ultraviolet light to an exposure apparatus; and
exposing a photosensitive substrate to the extreme ultraviolet light in the exposure apparatus to manufacture an electronic device,
the extreme ultraviolet light generation system including a laser system configured to emit first prepulse laser light, second prepulse laser light, and main pulse laser light in this order; a chamber including at least one window for introducing, into the chamber, the first prepulse laser light, the second prepulse laser light, and the main pulse laser light; a target supply unit configured to supply a target to a predetermined region in the chamber; and a processor configured to control the laser system so as to irradiate the target with the first prepulse laser light, irradiate the target, having been irradiated with the first prepulse laser light, with the second prepulse laser light having a pulse time width longer than a pulse time width of the main pulse laser light, and irradiate the target, having been irradiated with the second prepulse laser light, with the main pulse laser light temporally separated from the second prepulse laser light.
14. The electronic device manufacturing method according to claim 13 ,
wherein the pulse time width of the second prepulse laser light is within a range of 10 ns to 80 ns.
15. The electronic device manufacturing method according to claim 13 ,
wherein fluence of the second prepulse laser light at a position of the target when the target is irradiated with the second prepulse laser light is within a range of 1.5 J/cm 2 to 4.4 J/cm 2 .
16. The electronic device manufacturing method according to claim 13 ,
wherein the pulse time width of the first prepulse laser light is less than 1 ns, and fluence of the first prepulse laser light at a position of the target when the target is irradiated with the first prepulse laser light is within a range of 2.0 J/cm 2 to 20 J/cm 2 .
17. The electronic device manufacturing method according to claim 13 ,
wherein the pulse time width of the first prepulse laser light is 1 ns or more, and fluence of the first prepulse laser light at a position of the target when the target is irradiated with the first prepulse laser light is within a range of 60 J/cm 2 to 78 J/cm 2 .
18. The electronic device manufacturing method according to claim 13 ,
wherein a dimension of the target at timing of irradiating the target with the second prepulse laser light is within a range of 15% to 64% of a dimension of a beam cross section of the second prepulse laser light at a position of the target.
19. The electronic device manufacturing method according to claim 13 ,
wherein the laser system includes a first prepulse laser configured to emit the first prepulse laser light, a second prepulse laser configured to emit the second prepulse laser light, an optical pulse stretcher arranged on an optical path of the second prepulse laser light, and a main pulse laser configured to emit the main pulse laser light.
20. The electronic device manufacturing method according to claim 13 ,
wherein the laser system includes a first laser device configured to emit the first prepulse laser light, and a second laser device configured to emit the second prepulse laser light and the main pulse laser light, and
the second laser device includes CO 2 gas laser amplifiers, a first master oscillator configured to emit first seed light having a first amplification wavelength among a plurality of amplification wavelengths of the CO 2 gas laser amplifiers, a second master oscillator configured to emit second seed light having a second amplification wavelength among the plurality of amplification wavelengths and having a pulse time width shorter than that of the first seed light, and a beam combiner configured to cause the first seed light and the second seed light to enter the CO 2 gas laser amplifier.