Scalable dual-polarization mm-wave multi-band 5G phased array with a multi-multipliers LO generator
According to one embodiment, an RF frontend IC device includes a first RF transceiver to transmit and receive RF signals within a first frequency band and a second RF transceiver to transmit and receive RF signals within a second frequency band that is different than the first frequency band. The RF frontend IC device further includes a converter and a multi-band local oscillator (LO) generator to provide LO signals to the converter. The multi-band LO generator includes a phase-lock loop (PLL) circuit operating at a PLL operating frequency, wherein the PLL operating frequency is outside of the first frequency band and the second frequency band. The multi-band LO generator also includes multiple frequency multipliers coupled to the PLL circuit to upscale the PLL operating frequency and to generate an LO signal having a frequency within a predetermined proximity from the frequency band.
1. A radio frequency (RF) frontend integrated circuit (IC) device, the RF frontend IC device comprising:
a first RF transceiver to transmit and receive RF signals within a first frequency band;
a second RF transceiver to transmit and receive RF signals within a second frequency band that is different than the first frequency band;
a converter comprising a down-converter and an up-converter coupled to the first and second RF transceivers; and
a multi-band local oscillator (LO) generator coupled to the converter to provide LO signals to the converter, the multi-band LO generator including:
a phase-lock loop (PLL) circuit operating at a PLL operating frequency, wherein the PLL operating frequency is outside of and less than the first frequency band and the second frequency band,
a first frequency multiplier coupled to the PLL circuit to upscale the PLL operating frequency and to generate a first LO signal having a first LO frequency within a first predetermined proximity from the first frequency band, and
a second frequency multiplier coupled to the PLL circuit to upscale the PLL operating frequency and to generate a second LO signal having a second LO frequency within a second predetermined proximity from the second frequency band, wherein the first and second RF transceivers, the converter, and the multi-band LO generator are embedded within a single IC chip.
2. The RF frontend IC device of claim 1 , wherein the first LO frequency of the first LO signal is within a first range of LO frequencies approximately ranging from 17 Giga hertz (GHz) to 22 GHz.
3. The RF frontend IC device of claim 1 , wherein the second LO frequency of the second LO signal is within a second range of LO frequencies approximately ranging from 29.5 GHz to 36 GHz.
4. The RF frontend IC device of claim 1 , wherein the RF frontend IC device further comprises a third RF transceiver to transmit and receive RF signals within a third frequency band that is different than the first and second frequency bands, wherein the multi-band LO generator further includes a third frequency multiplier coupled to the PLL circuit to upscale the PLL operating frequency and to generate a third LO signal having a third LO frequency within a third predetermined proximity from third frequency band, wherein the third LO frequency of the third LO signal is within a third range of LO frequencies approximately ranging from 40.5 GHz to 45.5 GHz.
5. The RF frontend IC device of claim 4 , wherein the first frequency band is within a first range of frequencies approximately ranging from 24.5 GHz to 29.5 GHz, wherein the second frequency band is within a second range of frequencies approximately ranging from 37 GHz to 43.5 GHz, and wherein the third frequency band is within a third range of frequencies approximately ranging from 48 GHz to 53 GHz.
6. The RF frontend IC device of claim 4 , wherein a first frequency input to the first frequency multiplier is within a first range of input frequencies approximately ranging from 8.5 GHz to 11 GHz, wherein a second frequency input to the second frequency multiplier is within a second range of input frequencies approximately ranging from 9.83 GHz to 12 GHz, and wherein a third frequency input to the third frequency multiplier is within a third range of input frequencies approximately ranging from 10.125 GHz to 11.375 GHz.
7. The RF frontend IC device of claim 1 , wherein the PLL operating frequency is within a range of PLL frequencies approximately ranging from 8.5 GHz to 12 GHz.
8. The RF frontend IC device of claim 1 , further comprising:
a power combiner/divider coupled between the first and second RF transceivers and the multi-band LO generator, the power combiner being configured to combine a number of RF sub-signals received from one of the first and second RF transceivers to generate the RF signal, each of the number of RF sub-signals corresponding to one of the first and second RF transceivers, the power divider being configured to divide the RF signal into the number of RF sub-signals, wherein each of the number of RF sub-signals is provided to one of the first and second RF transceivers to be transmitted;
a wideband in-phase/quadrature (I/Q) generator being configured to receive the LO signals and to generate a 90-degree mm-wave phase shift signal for a band-selective image signal rejection; and
an intermediate frequency (IF) RC-CR poly-phase filter (PPF) being configured to reject an image signal of the RF signal.
9. The RF frontend IC device of claim 8 , wherein the band-selective image signal rejection chooses a low-side injection of a selected one of the LO signals used for an up/down conversion.
10. A radio frequency (RF) frontend integrated circuit (IC) device, the RF frontend IC device comprising:
a first RF transceiver to transmit and receive RF signals within a first frequency band;
a second RF transceiver to transmit and receive RF signals within a second frequency band that is different than the first frequency band;
a converter comprising a down-converter and an up-converter coupled to the first and second RF transceivers; and
a multi-band local oscillator (LO) generator coupled to the converter to provide LO signals to the converter, the multi-band LO generator including:
a phase-lock loop (PLL) circuit operating at a PLL operating frequency, wherein the PLL operating frequency is outside of the first frequency band and the second frequency band,
a first frequency multiplier coupled to the PLL circuit to upscale the PLL operating frequency and to generate a first LO signal having a first LO frequency within a first predetermined proximity from the first frequency band, and
a second frequency multiplier coupled to the PLL circuit to upscale the PLL operating frequency and to generate a second LO signal having a second LO frequency within a second predetermined proximity from the second frequency band, wherein the first and second RF transceivers, the converter, and the multi-band LO generator are embedded within a single IC chip,
wherein the PLL circuit comprises:
a charge pump;
a loop filter coupled to the charge pump;
a voltage-controlled oscillator (VCO) coupled to the loop filter for providing the PLL operating frequency; and
a programmable divider with a phase shift (PS) counter providing a feedback loop from the VCO to the charge pump.
11. A mobile device, comprising:
a baseband processor; and
a radio frequency (RF) frontend device coupled to the baseband processor, wherein the RF frontend device includes:
a first RF transceiver to transmit and receive RF signals within a first frequency band;
a second RF transceiver to transmit and receive RF signals within a second frequency band that is different than the first frequency band;
a converter comprising a down-converter and an up-converter coupled to the first and second RF transceivers; and
a multi-band local oscillator (LO) generator coupled to the converter to provide LO signals to the converter, the multi-band LO generator including:
a phase-lock loop (PLL) circuit operating at a PLL operating frequency, wherein the PLL operating frequency is outside of and less than the first frequency band and the second frequency band,
a first frequency multiplier coupled to the PLL circuit to upscale the PLL operating frequency and to generate a first LO signal having a first LO frequency within a first predetermined proximity from the first frequency band, and
a second frequency multiplier coupled to the PLL circuit to upscale the PLL operating frequency and to generate a second LO signal having a second LO frequency within a second predetermined proximity from the second frequency band, wherein the first and second RF transceivers, the converter, and the multi-band LO generator are embedded within a single IC chip.
12. The mobile device of claim 11 , wherein the first LO frequency of the first LO signal is within a first range of LO frequencies approximately ranging from 17 Giga hertz (GHz) to 22 GHz.
13. The mobile device of claim 11 , wherein the second LO frequency of the second LO signal is within a second range of LO frequencies approximately ranging from 29.5 GHz to 36 GHz.
14. The mobile device of claim 11 , wherein the RF frontend IC device further comprises a third RF transceiver to transmit and receive RF signals within a third frequency band that is different than the first and second frequency bands, wherein the multi-band LO generator further includes a third frequency multiplier coupled to the PLL circuit to upscale the PLL operating frequency and to generate a third LO signal having a third LO frequency within the third frequency band, wherein the third LO frequency of the third LO signal is within a third range of LO frequencies approximately ranging from 40.5 GHz to 45.5 GHz.
15. The mobile device of claim 14 , wherein the first frequency band is within a first range of frequencies approximately ranging from 24.5 GHz to 29.5 GHz, wherein the second frequency band is within a second range of frequencies approximately ranging from 37 GHz to 43.5 GHz, and wherein the third frequency band is within a third range of frequencies approximately ranging from 48 GHz to 53 GHz.
16. The mobile device of claim 14 , wherein a first frequency input to the first frequency multiplier is within a first range of input frequencies approximately ranging from 8.5 GHz to 11 GHz, wherein a second frequency input to the second frequency multiplier is within a second range of input frequencies approximately ranging from 9.83 GHz to 12 GHz, and wherein a third frequency input to the third frequency multiplier is within a third range of input frequencies approximately ranging from 10.125 GHz to 11.375 GHz.
17. The mobile device of claim 11 , wherein the PLL operating frequency is within a range of PLL frequencies approximately ranging from 8.5 GHz to 12 GHz.
18. The mobile device of claim 11 , wherein the PLL circuit comprises:
a charge pump;
a loop filter coupled to the charge pump;
a voltage-controlled oscillator (VCO) coupled to the loop filter for providing the PLL operating frequency; and
a programmable divider with a phase shift (PS) counter providing a feedback loop from the VCO to the charge pump.
19. The mobile device of claim 11 , wherein the RF frontend device further comprises:
a power combiner/divider coupled between the first and second RF transceivers and the multi-band LO generator, the power combiner being configured to combine a number of RF sub-signals received from one of the first and second RF transceivers to generate the RF signal, each of the number of RF sub-signals corresponding to one of the first and second RF transceivers, the power divider being configured to divide the RF signal into the number of RF sub-signals, wherein each of the number of RF sub-signals is provided to one of the first and second RF transceivers to be transmitted;
a wideband in-phase/quadrature (I/Q) generator being configured to receive the LO signals and to generate a 90-degree mm-wave phase shift signal for a band-selective image signal rejection; and
an intermediate frequency (IF) RC-CR poly-phase filter (PPF) being configured to reject an image signal of the RF signal.
20. The mobile device of claim 19 , wherein the band-selective image signal rejection chooses a low-side injection of a selected one of the LO signals used for an up/down conversion.