Electro-absorption modulator, optical semiconductor device and optical module
An electro-absorption modulator of the invention is an electro-absorption modulator which is formed on an InP substrate and modulate incident light according to a voltage applied to that modulator, and which comprises a light absorbing layer for absorbing a portion of the incident light by using an electric field generated by the applied voltage; wherein the light absorbing layer is comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Al but contains Bi.
1. An electro-absorption modulator which is formed on an InP substrate and modulates incident light according to a voltage applied to that modulator, said electro-absorption modulator comprising:
a light absorbing layer for absorbing a portion of the incident light by using an electric field generated by the applied voltage; wherein
the light absorbing layer is comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Al but contains Bi and that is lattice-matched to the InP substrate.
2. The electro-absorption modulator of claim 1 , wherein
the light absorbing layer has a multiple quantum-well structure in which quantum-well layers and barrier layers are stacked alternately, and the quantum-well layers are each comprised of the ternary or more complex III-V semiconductor mixed crystal that does not contain Al but contains Bi.
3. An electro-absorption modulator which is formed on an InP substrate and modulates incident light according to a voltage applied to that modulator, said electro-absorption modulator comprising:
a light absorbing layer for absorbing a portion of the incident light by using an electric field generated by the applied voltage; wherein
the light absorbing layer has a multiple quantum-well structure in which quantum-well layers and barrier layers are stacked alternately;
the quantum-well layers are each comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Al but contains Bi and that is lattice-matched to the InP substrate; and
the barrier layers are each comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Bi but contains Al.
4. The electro-absorption modulator of claim 1 , wherein
the light absorbing layer is comprised of InGaAsBi.
5. The electro-absorption modulator of claim 2 , wherein
the quantum-well layers are each comprised of InGaAsBi.
6. The electro-absorption modulator of claim 1 , wherein
the light absorbing layer is comprised of InGaPBi.
7. The electro-absorption modulator of claim 2 , wherein
the quantum-well layers are each comprised of InGaPBi.
8. The electro-absorption modulator of claim 1 , wherein
the light absorbing layer is comprised of InGaAsPBi.
9. The electro-absorption modulator of claim 2 , wherein
the quantum-well layers are each comprised of InGaAsPBi.
10. The electro-absorption modulator of claim 1 , which comprises:
a first cladding layer formed on a surface of the InP substrate;
a first light-waveguide layer formed on a surface of the first cladding layer;
the light absorbing layer formed on a surface of the first light-waveguide layer;
a second light-waveguide layer formed on a surface of the light absorbing layer; and
a second cladding layer formed on a surface of the second light-waveguide layer.
11. An optical semiconductor device which comprises the electro-absorption modulator of claim 10 and a semiconductor laser that is formed on the InP substrate on which the electro-absorption modulator is formed, said semiconductor laser comprising:
a first laser cladding layer formed on a surface of the InP substrate;
a first laser light-waveguide layer formed on a surface of the first laser cladding layer;
an active layer formed on a surface of the first laser light-waveguide layer;
a second laser light-waveguide layer formed on a surface of the active layer; and
a second laser cladding layer formed on a surface of the second laser light-waveguide layer; wherein
the first laser cladding layer, the first laser light-waveguide layer, the active layer, the second laser light-waveguide layer and the second laser cladding layer are connected, respectively, to the first cladding layer, the first light-waveguide layer, the light absorbing layer, the second light-waveguide layer and the second cladding layer in the electro-absorption modulator.
12. An optical semiconductor device which comprises the electro-absorption modulator of claim 1 and a semiconductor laser that is formed on the InP substrate on which the electro-absorption modulator is formed, wherein
an active layer of the semiconductor laser is connected to the light absorbing layer of the electro-absorption modulator.
13. An optical semiconductor device in which two or more optical semiconductor devices each being said optical semiconductor device of claim 11 , are integrated on a single said InP substrate.
14. An optical semiconductor device in which two or more second semiconductor lasers that are each provided as the optical semiconductor device of claim 12 , are integrated on a single said InP substrate, and a coupler that couples together waveguides for guiding pieces of laser light emitted from the second semiconductor lasers and having different wavelengths, is integrated on the single said InP substrate.
15. An optical semiconductor device in which two or more second semiconductor lasers that are each provided as the optical semiconductor device of claim 11 , are integrated on a single said InP substrate, and a coupler that couples together waveguides for guiding pieces of laser light emitted from the second semiconductor lasers and having different wavelengths, is integrated on the single said InP substrate.
16. The optical semiconductor device of claim 15 , wherein the coupler comprises:
a first coupler cladding layer formed on a surface of the InP substrate;
a first coupler light-waveguide layer formed on a surface of the first coupler cladding layer;
a transparent waveguide layer formed on a surface of the first coupler light-waveguide layer;
a second coupler light-waveguide layer formed on the transparent waveguide layer; and
a second coupler cladding layer formed on a surface of the second coupler light-waveguide layer; and
the first coupler cladding layer, the first coupler light-waveguide layer, the transparent waveguide layer, the second coupler light-waveguide layer and the second coupler cladding layer are connected, respectively, to the first cladding layer, the first light-waveguide layer, the light absorbing layer, the second light-waveguide layer and the second cladding layer in the electro-absorption modulator of each of the second semiconductor lasers.
17. An optical module, comprising:
a stem; a chip carrier mounted on the stem; an optical device mounted on the chip carrier; and a lens holder holding a lens and placed on the stem so as to cover the optical device and the chip carrier; wherein
the optical device is the electro-absorption modulator of claim 1 .
18. The optical module of claim 17 , wherein
no Peltier cooler is mounted.
19. An optical module, comprising:
a stem;
a temperature adjustment system mounted on the stem;
a chip carrier mounted on the temperature adjustment system;
an optical device mounted on the chip carrier; and
a lens holder holding a lens and placed on the stem so as to cover the optical device, the chip carrier and the temperature adjustment system; wherein
the optical device is the optical semiconductor device of claim 11 , and the active layer in the semiconductor laser is comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Bi.
20. An optical module, comprising:
a stem;
a chip carrier mounted on the stem;
an optical device mounted on the chip carrier; and
a lens holder holding a lens and placed on the stem so as to cover the optical device and the chip carrier; wherein
the optical device is the optical semiconductor device of claim 11 .