Electrostatic chuck with differentiated ceramics
Electrostatic chucks (ESCs) for reactor or plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic bottom plate having heater elements therein, the ceramic bottom plate composed of alumina having a first purity. The substrate support assembly also includes a ceramic top plate having an electrode therein, the ceramic top plate composed of alumina having a second purity higher than the first purity. A bond layer is between the ceramic top plate and the ceramic bottom plate. The ceramic top plate is in direct contact with the bond layer, and the bond layer is in direct contact with the ceramic bottom plate.
1. A substrate support assembly, comprising:
a ceramic bottom plate having heater elements therein, the ceramic bottom plate comprising alumina having a first purity;
a ceramic top plate having an electrode therein, the ceramic top plate comprising alumina having a second purity higher than the first purity; and
a bond layer between the ceramic top plate and the ceramic bottom plate, the ceramic top plate in direct contact with the bond layer, and the bond layer in direct contact with the ceramic bottom plate.
2. The substrate support assembly of claim 1 , wherein the second purity is higher than the first purity by greater than 5%.
3. The substrate support assembly of claim 1 , wherein the first purity is in the range of 90%-94%, and the second purity is greater than 99%.
4. The substrate support assembly of claim 1 , wherein the bond layer is an aluminum foil.
5. The substrate support assembly of claim 4 , wherein the aluminum foil comprises silicon having an atomic concentration in the range of 2%-20% of the aluminum foil.
6. The substrate support assembly of claim 4 , wherein the aluminum foil has a thickness in the range of 50-500 microns.
7. The substrate support assembly of claim 1 , wherein the bond layer is a polymer layer.
8. The substrate support assembly of claim 1 , further comprising:
a cooling base coupled to the ceramic bottom plate at a side of the ceramic bottom plate opposite the bond layer.
9. The substrate support assembly of claim 1 , further comprising:
a first additional ceramic plate coupled to the ceramic bottom plate at a side of the ceramic bottom plate opposite the bond layer; and
a second additional ceramic plate coupled to the first additional ceramic plate at a side of the first additional ceramic plate opposite the ceramic bottom plate.
10. The substrate support assembly of claim 1 , further comprising:
a gas pathway through the ceramic bottom plate, through the bond layer, and through the ceramic top plate.
11. A substrate support assembly, comprising:
a ceramic bottom plate having heater elements therein, the ceramic bottom plate comprising alumina having a first porosity;
a ceramic top plate having an electrode therein, the ceramic top plate comprising alumina having a second porosity lower than the first porosity; and
a bond layer between the ceramic top plate and the ceramic bottom plate, the ceramic top plate in direct contact with the bond layer, and the bond layer in direct contact with the ceramic bottom plate.
12. The substrate support assembly of claim 11 , wherein the second porosity is in the range of 0-5%, and the first porosity is in the range of 2-10%.
13. The substrate support assembly of claim 11 , wherein the bond layer is an aluminum foil.
14. A system for etch or deposition, comprising:
a chamber;
a plasma source within or coupled to the chamber; and
a substrate support assembly the chamber, the substrate support assembly comprising:
a ceramic bottom plate having heater elements therein, the ceramic bottom plate comprising alumina having a first purity and a first porosity;
a ceramic top plate having an electrode therein, the ceramic top plate comprising alumina having a second purity higher than the first purity or having a second porosity lower than the first porosity; and
a bond layer between the ceramic top plate and the ceramic bottom plate, the ceramic top plate in direct contact with the bond layer, and the bond layer in direct contact with the ceramic bottom plate.
15. The system for etch or deposition of claim 14 , wherein the second purity is higher than the first purity by greater than 5%.
16. The system for etch or deposition of claim 14 , wherein the first purity is in the range of 90%-94%, and the second purity is greater than 99%.
17. The system for etch or deposition of claim 14 , wherein the second porosity is in the range of 0-5%, and the first porosity is in the range of 2-10%.
18. The system for etch or deposition of claim 14 , wherein the bond layer is an aluminum foil.
19. The system for etch or deposition of claim 14 , wherein the substrate support assembly further comprises:
a cooling base coupled to the ceramic bottom plate at a side of the ceramic bottom plate opposite the bond layer.
20. The system for etch or deposition of claim 14 , wherein the substrate support assembly further comprises:
a first additional ceramic plate coupled to the ceramic bottom plate at a side of the ceramic bottom plate opposite the bond layer; and
a second additional ceramic plate coupled to the first additional ceramic plate at a side of the first additional ceramic plate opposite the ceramic bottom plate.