Negative differential resistance element having 3-dimension vertical structure
View Patent ↗Provided is a negative differential resistance element having a 3-dimension vertical structure. The negative differential resistance element having a 3-dimension vertical structure includes: a substrate; a first electrode that is formed on the substrate to receive a current; a second semiconductor material that is formed in some region of the substrate; a first semiconductor material that is deposited in some other region and the first electrode of the substrate and some region of an upper end of the second semiconductor material; an insulator that has a part vertically erected from the substrate, the other part vertically erected from the second semiconductor material, and an upper portion stacked with a first semiconductor material; and a second electrode that is formed at an upper end of the second semiconductor material to output a current, thereby significantly reducing an area of the device and greatly improving device scaling and integration.
1. A negative differential resistance element having a 3-dimension vertical structure, comprising:
a substrate;
a first electrode that is formed on the substrate to receive a current;
a second semiconductor material that is formed in some region of the substrate;
a first semiconductor material that is deposited in some other region and the first electrode of the substrate and some region of an upper end of the second semiconductor material;
an insulator that has a part vertically erected from the substrate, the other part vertically erected from the second semiconductor material, and an upper portion stacked with the first semiconductor material; and
a second electrode that is formed at an upper end of the second semiconductor material to output a current.
2. The negative differential resistance element of claim 1 , wherein a first path having only a first horizontal resistance without passing through the insulator vertically erected is formed.
3. The negative differential resistance element of claim 2 , wherein a second path that has a first vertical resistance, a second vertical resistance, and a second horizontal resistance as a 3-dimension vertical resistance as the second path passes through the insulator vertically erected are formed.
4. The negative differential resistance element of claim 1 , wherein N the insulators are vertically erected to have N+1 paths or peaks.
5. The negative differential resistance element of claim 1 , wherein the first semiconductor material and the second semiconductor material include any one of silicon, germanium, III-V group semiconductor, oxide semiconductor, organic semiconductor, transition metal dichalcogenide, and phosphorene which are uniformly deposited.