Light emitting diode (LED) chip and manufacturing method and light emitting method thereof
A LED chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, a transparent electric conductive layer, and a passivation protective layer stacked with each other in sequence. The passivation protective layer has a plurality holes corresponding to different positions of the transparent electric conductive layer respectively. A P-type electrode is electrically linked with the transparent electric conductive layer through said plurality of holes, while an N-type electrode is electrically linked with said N-type semiconductor layer.
1. A manufacturing method of a LED, comprising steps of:
(a) forming an N-type semiconductor layer, an active region and a P-type semiconductor layer sequentially on a substrate;
(b) forming said transparent electric conductive layer stacked on said P-type semiconductor layer and forming at least one N-type hole extended from a transparent electric conductive layer to said N-type semiconductor layer through said P-type semiconductor layer and said active region at the same time, wherein the step (b) further comprises steps of:
stacking a transparent electric conductive base layer on said P-type semiconductor layer;
stacking a first photoresist layer on said transparent electric conductive base layer; and
etching at least one predetermined position of said first photoresist layer, said transparent electric conductive base layer, and said active region to form said at least one N-type hole and said transparent electric conductive layer simultaneously;
(c) stacking a passivation protective layer having a plurality of passive-layer holes on said transparent electric conductive layer, such that said passive-layer holes of said passivation protective layer are formed corresponding to different positions of said transparent electric conductive layer respectively, wherein an N-type exposed portion, which is extended from said passivation protective layer to said N-type semiconductor layer through said transparent electric conductive layer, said P-type semiconductor layer and said active region, is formed at a position of said at least one N-type hole, while stacking said passivation protective layer on said transparent electric conductive layer, wherein the step (c) further comprises steps of:
stacking a passive base layer on said transparent electric conductive layer;
stacking a second photoresist layer on said passive base layer; and
removing said second photoresist layer and said passive base layer at a position corresponding to said at least one N-type hole, such that said passivation protective layer and said N-type exposed portion are formed simultaneously; and
(d) electrically linking an N-type electrode to said N-type semiconductor layer, and electrically linking a P-type electrode to said P-type semiconductor layer through said plurality of passive-layer holes of said passivation protective layer.
2. The method, as recited in claim 1 , wherein in step (d), a plurality of finger members, extending from one side to an opposing side of said passivation protective layer through said plurality passive-layer holes of said passivation protective layer respectively, are formed when said P-type electrode is formed on said passivation protective layer, wherein said finger members are electrically linked with different positions of said transparent electric conductive layer respectively.
3. A manufacturing method of a LED, comprising steps of:
(a) forming an N-type semiconductor layer, an active region and a P-type semiconductor layer sequentially on a substrate;
(b) forming said transparent electric conductive layer stacked on said P-type semiconductor layer and forming at least one N-type hole extended from a transparent electric conductive layer to said N-type semiconductor layer through said P-type semiconductor layer and said active region at the same time, wherein the step (b) further comprises steps of:
stacking a transparent electric conductive base layer on said P-type semiconductor layer;
stacking a first photoresist layer on said transparent electric conductive base layer; and
etching predetermined positions of said first photoresist layer, said transparent electric conductive base layer, said active region, and said N-type semiconductor layer to form said at least one N-type hole and said transparent electric conductive layer simultaneously;
(c) stacking a passivation protective layer having a plurality of passive-layer holes on said transparent electric conductive layer, such that said passive-layer holes of said passivation protective layer are formed corresponding to different positions of said transparent electric conductive layer respectively, wherein an N-type exposed portion, extending from said passivation protective layer to said N-type semiconductor layer through said transparent electric conductive layer, said P-type semiconductor layer and said active region, is formed in said at least one N-type hole, while stacking said passivation protective layer on said transparent electric conductive layer, wherein the step (c) further comprises steps of:
stacking a passive base layer on said transparent electric conductive layer;
stacking a second photoresist layer on said passive base layer; and
removing said second photoresist layer and said passive base layer at a position corresponding to said at least one N-type hole, such that said passivation protective layer and said N-type exposed portion are formed simultaneously; and
(d) electrically linking an N-type electrode to said N-type semiconductor layer, and electrically linking a P-type electrode to said P-type semiconductor layer through said plurality of passive-layer holes of said passivation protective layer.
4. The method, as recited in claim 3 , wherein in step (d), a plurality of finger members, extending from one side to an opposing side of said passivation protective layer through said plurality passive-layer holes of said passivation protective layer respectively, are formed when said P-type electrode is formed on said passivation protective layer, wherein said finger members are electrically linked with different positions of said transparent electric conductive layer respectively.