IP Library Granted Patent US 11,467,484
Granted Patent B2
US 11,467,484 · App. 16/800,316 · Granted Oct 11, 2022

Method for inspecting a reticle, a method for manufacturing a reticle, and a method for manufacturing a semiconductor device using the same

Inventors: Seulgi Kim (Hwaseong-si, KR); Hyonseok Song (Suwon-si, KR); Inyong Kang (Seoul, KR); Kangwon Lee (Hwaseong-si, KR); JuHyoung Lee (Hwaseong-si, KR); Eunsik Jang (Seoul, KR)
Assignee: Samsung Electronics Co., Ltd.
G03F1/22G03F7/2004H01L21/0274H01L22/12G01N2021/95676
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Quick Facts
Patent No.
US 11,467,484
App. No.
16/800,316
Granted
Oct 11, 2022
Kind
B2
Abstract

A method for inspecting a reticle including a reflective layer on a reticle substrate is provided. The method may include loading the reticle on a stage, cooling the reticle substrate to a temperature lower than a room temperature, irradiating a laser beam to the reflective layer on the reticle substrate, receiving the laser beam using a photodetector to obtain an image of the reflective layer, and detect a particle defect on the reflective layer or a void defect in the reflective layer based on the image of the reflective layer.

Claims (15)

1. A method for inspecting a reticle, the method comprising:

loading the reticle on a stage, the reticle including a reticle substrate and a reflective layer on the reticle substrate;

cooling the reticle substrate;

irradiating a laser beam to the reflective layer on the reticle substrate;

receiving the laser beam using a photodetector to obtain an image of the reflective layer; and

detecting whether a particle defect exists on the reflective layer or a void defect exists in the reflective layer based on the image of the reflective layer, wherein

the reticle substrate is cooled below 145 kelvins (K) to decrease a specific heat capacity of the reflective layer and to increase a power of the laser beam.

2. The method of claim 1 , wherein the laser beam has power of 0.87 W/cm 2 .

3. The method of claim 1 , wherein the laser beam includes ArF ultraviolet light.

4. The method of claim 1 , wherein the laser beam is scanned at a speed of 12.3 mm/s.

5. The method of claim 1 , wherein the reticle includes an extreme ultraviolet (EUV) reticle.

6. The method of claim 5 , wherein the reflective layer of the EUV reticle includes a molybdenum layer on a silicon layer.

7. The method of claim 5 , wherein the EUV reticle further includes an absorption pattern on the reflective layer.

8. The method of claim 1 , wherein the stage includes a cooler for cooling the reticle substrate.

9. The method of claim 8 , wherein the cooler includes a Peltier device or an air blowing device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 28, 2020
From: KIM, SEULGI; SONG, HYONSEOK; KANG, INYONG; LEE, KANGWON; LEE, JUHYOUNG; JANG, EUNSIK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 051960/0608 →
Priority Claims (1)
KR 10-2019-0093406 · Jul 31, 2019 · national
Continuity (1)
Related Publication 20210033958A1 · Feb 4, 2021
Cited By (2)
US 12,498,552 US 12,560,480