Elastic wave device, high-frequency front-end circuit, and communication apparatus
An elastic wave device includes a high-acoustic-velocity member, a low-acoustic-velocity film, a piezoelectric film, and am interdigital transducer electrode stacked in this order. The interdigital transducer electrode includes an intersecting region and outer edge regions. The intersecting region includes a central region located in the middle of the intersecting region in the direction in which electrode fingers extend and the inner edge regions located at the respective outer side portions of the central region. The electrode fingers in the inner edge regions have a larger thickness than in the central region. Each electrode finger has an incrased thickness portion. The increased thickness portion is made of a metal having a density d of about 5.5 g/cm 3 or more and has a film thickenss equal to or smaller than a wavelength-normalized film thickness represented by T (%)=−0.1458d+4.8654.
1. An elastic wave device comprising:
a high-acoustic-velocity member made of a high-acoustic-velocity material;
a low-acoustic-velocity film stacked on the high-acoustic-velocity member and made of a low-acoustic-velocity material;
a piezoelectric film stacked on the low-acoustic-velocity film and made of lithium tantalate; and
an interdigital transducer electrode diposed on the piezoelectric film; wherein
the high-acoustic-velocity material is a material in which an acoustic velocity of a bulk wave that propagates through the high-acoustic-velocity member is higher than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer;
the low-acoustic-velocity material is a material in which an acoustic velocity of a bulk wave that propagates through the low-acoustic-velocity film is lower than an acoustic velocity of an elastic wave that propagates through the piezoelectric layer;
the interdigital transducer electrode includes:
first electrode fingers; and
second electrode fingers;
the first electrode fingers and the second electrode fingers interdigitate with each other;
a region where the first electrode fingers and the second electrode fingers intersect each other in an elastic wave propagation direction is an intersecting region;
the interdigital transducer electrode includes:
the intersecting region; and
first and second outer edge regions disposed at respective outer side portions of the intersecting region in a direction in which the first electrode fingers and the second electrode fingers extend;
the intersecting region includes:
a central region located in a middle of the intersecting region in the direction in which the first and second electrode fingers extend; and
first and second inner edge regions disposed at respective outer side portions of the central region in the direction in which the first and second electrode fingers extend;
the first and second electrode fingers in the first and second inner edge regions have a larger thickness than the first and second electrode fingers in the central region;
each of the first and second electrode fingers has an increased thickness portion having a larger thickness than the first and second electrode fingers in the central region; and
the increased thickness portion is made of a metal having a density d of about 5.5 g/cm 3 or more and has a film thickness equal to or smaller than a wavelength-normalized film thickness represented by T (%)=−0.1458d+4.8654.
2. The elastic wave device according to claim 1 , wherein
the first and second electrode fingers in the first and second inner edge regions each include:
a first electrode; and
a second electrode stacked on the first electrode; and
the second electrode defines and functions as the increased thickness portion of each of the first and second electrode fingers.
3. The elastic wave device according to claim 2 , wherein the first electrode has a duty ratio equal or substantially equal to that of the second electrode.
4. The elastic wave device according to claim 2 , wherein the second electrode has a lower duty ratio than that of the first electrode.
5. The elastic wave device according to claim 1 , wherein the first electrode is mainly made of Al.
6. The elastic wave device according to claim 1 , wherein the second electrode is made of one metal selected from the group consisting of Cu, Ta, Pt, and Au.
7. The elastic wave device according to claim 1 , wherein each of the first and second inner edge regions has a smaller band width ratio than that of the central region.
8. The elastic wave device according to claim 1 , wherein
an acoustic velocity in each of the first and second inner edge regions is lower than an acoustic velocity in the central region; and
an acoustic velocity in each of the first and second outer edge regions is higher than that in the first and second inner edge regions.
9. The elastic wave device according to claim 1 , wherein the high-acoustic-velocity member is a high-acoustic-vlocity supporting substrate.
10. The elastic wave device according to claim 1 , further comprising:
a supporting substrate that supports the high-acoustic-velocity member.
11. A high-frequency front-end circuit comprising:
the elastic wave device according to claim 1 ; and
a power amplifier.
12. The high-frequency front-end circuit according to claim 11 , wherein
the first and second electrode fingers in the first and second inner edge regions each include:
a first electrode; and
a second electrode stacked on the first electrode; and
the second electrode defines and functions as the increased thickness portion of each of the first and second electrode fingers.
13. The high-frequency front-end circuit according to claim 12 , wherein the first electrode has a duty ratio equal or substantially equal to that of othe second electrode.
14. The high-frequency front-end circuit according to claim 12 , wherein the second electrode has a lower duty ratio than that of the first electrode.
15. The high-frequency front-end circuit according to claim 11 , wherein the first electrode is mainly made of Al.
16. The high-frequency front-end circuit according to claim 11 , wherein the second electrode is made of one metal selected from the group consisting of Cu, Ta, Pt, and Au.
17. The high-frequency front-end circuit according to claim 11 , wherein each of the first and second inner edge regions has a smaller band width ratio than that of the central region.
18. The high-frequency front-end circuit according to claim 11 , wherein
an acoustic velocity in each of the first and second inner edge regions is lower than an acoustic velocity in the central region; and
an acoustic velocity in each of the first and second outer edge regions is higher than that in the first and second inner edge regions.
19. The high-frequency front-end circuit according to claim 11 , wherein the high-acoustic-velocity member is a high-acoustic-vlocity supporting substrate.
20. A communication apparatus comprising:
the frequency front-end circuit according to claim 11 ; and
an RF signal processing circuit.