Semiconductor layout pattern and forming method thereof
The invention provides a semiconductor layout pattern, the semiconductor layout pattern includes a substrate, a plurality of ternary content addressable memories (TCAM) are arranged on the substrate, the layout of at least two TCAM is mirror symmetric with each other along an axis of symmetry, and the two TCAM are connected to the same search line (SL) together.
1. A semiconductor layout pattern, comprising:
a substrate having a plurality of ternary content addressable memories (TCAMs), wherein the layout of at least two TCAMs is mirror symmetric to each other along an axis of symmetry, and the two TCAMs are connected to a same search line (SL);
wherein each TCAM comprises two mutually symmetrical eight-transistor layout patterns, and each eight-transistor layout pattern comprises:
a first pull-up transistor (PU 1 ) and a first pull-down transistor (PD 1 ) constitute a first inverter (INV 1 )
a second pull-up transistor (PU 2 ) and a second pull-down transistor (PD 2 ) constitute a second inverter (inv 2 );
a first access transistor (PG 1 ) and a second access transistor (PG 2 ) connected to the first inverter and the second inverter; and
a read transistor (RPD) and another read transistor (RPG) connected in series with each other, wherein a gate structure of the read transistor (RPD) is connected with a gate structure of the first pull-down transistor (PD 1 ), wherein a drain of the read transistor (RPG) is connected to a voltage source (Vss);
wherein the layout pattern comprises a first metal layer (M 1 ) including a plurality of metal wires, and a first metal wire included in the first metal layer (M 1 ) is connected to the voltage source (Vss), and the first metal wire is connected to the drain of the read transistor (RPG) and a drain of the first pull-down transistor (PD 1 ) simultaneously, and the first metal wire has an inverted T-shaped pattern.
2. The semiconductor layout pattern according to claim 1 , wherein a source of the read transistor (RPD) is connected to a match line (ML).
3. The semiconductor layout pattern according to claim 1 , wherein a gate of the read transistor (RPG) is connected to the search line (SL).
4. The semiconductor layout pattern according to claim 1 , wherein a second metal wire included in the first metal layer (M 1 ) is located on the symmetry axis between the two TCAMs, and the second metal wire is connected to the search line (SL), and the at least one TCAM and another TCAM adjacent and symmetrical to it share the same second metal wire.
5. The semiconductor layout pattern according to claim 1 , wherein a third metal wire included in the first metal layer (M 1 ) is connected to a match line (ML), and the third metal wire is not aligned with the first metal wire in a horizontal direction.
6. A method for manufacturing a semiconductor layout pattern, comprising:
providing a substrate, on which a plurality of ternary content addressable memories (TCAMs) are formed, wherein the layout of at least two TCAMs is mirror symmetric with each other along an axis of symmetry, and the two TCAMs are connected to a same search line (SL);
wherein each TCAM comprises two mutually symmetrical eight-transistor layout patterns, and each eight-transistor layout pattern comprises:
a first pull-up transistor (PU 1 ) and a first pull-down transistor (PD 1 ) constitute a first inverter (INV 1 )
a second pull-up transistor (PU 2 ) and a second pull-down transistor (PD 2 ) constitute a second inverter (inv 2 );
a first access transistor (PG 1 ) and a second access transistor (PG 2 ) connected to the first inverter and the second inverter; and
a read transistor (RPD) and another read transistor (RPG) connected in series with each other, wherein a gate structure of the read transistor (RPD) is connected with a gate structure of the first pull-down transistor (PD 1 ), wherein a drain of the read transistor (RPG) is connected to a voltage source (Vss);
wherein the layout pattern comprises a first metal layer (M 1 ) including a plurality of metal wires, and a first metal wire included in the first metal layer (M 1 ) is connected to the voltage source (Vss), and the first metal wire is connected to the drain of the read transistor (RPG) and a drain of the first pull-down transistor (PD 1 ) simultaneously, and the first metal wire has an inverted T-shaped pattern.
7. The method according to claim 6 , wherein a source of the read transistor (RPD) is connected to a match line (ML).
8. The method according to claim 6 , wherein a gate of the read transistor (RPG) is connected to the search line (SL).
9. The method according to claim 6 , wherein a second metal wire included in the first metal layer (M 1 ) is located on the symmetry axis between the two TCAMs, and the second metal wire is connected to the search line (SL), and the at least one TCAM and another TCAM adjacent and symmetrical to it share a same second metal wire.
10. The method according to claim 6 , wherein a third metal wire included in the first metal layer (M 1 ) is connected to a match line (ML), and the third metal wire is not aligned with the first metal wire in a horizontal direction.