Semiconductor relay device
A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. A transistor has a gate coupled to the first node. An anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to a third node.
1. A semiconductor relay device comprising:
a conversion circuit configured to receive an input signal from outside, and pass a first current to a first node based on the input signal;
a zener diode having an anode coupled to a second node and a cathode coupled to the first node;
a resistor coupled between the second node and a third node;
a number n of diodes that are serially coupled, wherein an anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to the third node, where n is a natural number larger than or equal to 2;
a thyristor having an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node; and
a transistor having a gate coupled to the first node.
2. The semiconductor relay device according to claim 1 , wherein
the n diodes include a first to an n th diode,
an anode of an i th diode is coupled to a cathode of an (i−1)th diode for all cases of i where i is a natural number larger than or equal to 2 and smaller than or equal to n−1,
an anode of the first diode is coupled to the first node, and
an anode of the n th diode is coupled to a cathode of the (n−1) th diode, and a cathode of the n th diode is coupled to the third node.
3. The semiconductor relay device according to claim 2 , wherein
the conversion circuit outputs a first voltage across the first node and a fourth node coupled to the second node via a diode over a period of receiving the input signal, and
a breakdown voltage of the zener diode is lower than the first voltage.
4. The semiconductor relay device according to claim 3 , wherein
the breakdown voltage is higher than a threshold voltage of the transistor.
5. The semiconductor relay device according to claim 4 , wherein
each of the n diodes has a forward voltage having a first magnitude when the diode has a first temperature, and has a forward voltage having a second magnitude smaller than the first magnitude when the diode has a second temperature higher than the first temperature.
6. The semiconductor relay device according to claim 5 , further comprising:
a transmission circuit configured to output the input signal.
7. The semiconductor relay device according to claim 6 , wherein
the transmission circuit is a light emitting diode, and
the conversion circuit includes a photodiode.
8. The semiconductor relay device according to claim 4 , wherein
the n diodes generate, between the second end and the first end, a first forward voltage when the diodes have a first temperature, and a second forward voltage when the diodes have a second temperature higher than the first temperature,
the first forward voltage is higher than the breakdown voltage, and
the second forward voltage is lower than the breakdown voltage.
9. The semiconductor relay device according to claim 3 , wherein
each of the n diodes has a forward voltage having a first magnitude when the diode has a first temperature, and has a forward voltage having a second magnitude smaller than the first magnitude when the diode has a second temperature higher than the first temperature.
10. The semiconductor relay device according to claim 3 , wherein
the n diodes generate, between the second end and the first end, a first forward voltage when the diodes have a first temperature, and a second forward voltage when the diodes have a second temperature higher than the first temperature,
the first forward voltage is higher than the breakdown voltage, and
the second forward voltage is lower than the breakdown voltage.
11. The semiconductor relay device according to claim 2 , wherein
each of the n diodes has a forward voltage having a first magnitude when the diode has a first temperature, and has a forward voltage having a second magnitude smaller than the first magnitude when the diode has a second temperature higher than the first temperature.
12. The semiconductor relay device according to claim 1 , wherein
the conversion circuit outputs a first voltage across the first node and a fourth node coupled to the second node via a diode over a period of receiving the input signal, and
a breakdown voltage of the zener diode is lower than the first voltage.
13. The semiconductor relay device according to claim 12 , wherein
the breakdown voltage is higher than a threshold voltage of the transistor.
14. The semiconductor relay device according to claim 13 , wherein
each of the n diodes has a forward voltage having a first magnitude when the diode has a first temperature, and has a forward voltage having a second magnitude smaller than the first magnitude when the diode has a second temperature higher than the first temperature.
15. The semiconductor relay device according to claim 14 , further comprising:
a transmission circuit configured to output the input signal.
16. The semiconductor relay device according to claim 15 , wherein
the transmission circuit is a light emitting diode, and
the conversion circuit includes a photodiode.
17. The semiconductor relay device according to claim 13 , wherein
the n diodes generate, between the second end and the first end, a first forward voltage when the diodes have a first temperature, and a second forward voltage when the diodes have a second temperature higher than the first temperature,
the first forward voltage is higher than the breakdown voltage, and
the second forward voltage is lower than the breakdown voltage.
18. The semiconductor relay device according to claim 12 , wherein
each of the n diodes has a forward voltage having a first magnitude when the diode has a first temperature, and has a forward voltage having a second magnitude smaller than the first magnitude when the diode has a second temperature higher than the first temperature.
19. The semiconductor relay device according to claim 12 , wherein
the n diodes generate, between the second end and the first end, a first forward voltage when the diodes have a first temperature, and a second forward voltage when the diodes have a second temperature higher than the first temperature,
the first forward voltage is higher than the breakdown voltage, and
the second forward voltage is lower than the breakdown voltage.
20. The semiconductor relay device according to claim 1 , wherein
each of the n diodes has a forward voltage having a first magnitude when the diode has a first temperature, and has a forward voltage having a second magnitude smaller than the first magnitude when the diode has a second temperature higher than the first temperature.