Imaging device
An imaging device includes: an effective pixel region that includes a plurality of imaging elements-A, amplifies signal charges generated by photoelectric conversion, and reads the signal charges into a drive circuit; and an optical black region that includes a plurality of imaging elements-B, surrounds the effective pixel region, and outputs optical black that serves as the reference for black level. In the imaging device, the photoelectric conversion layer forming the plurality of imaging elements-A and the plurality of imaging elements-B is a common photoelectric conversion layer, the common photoelectric conversion layer is located on an outer side of the optical black region, and extends toward an outer edge region surrounding the optical black region, and an outer edge electrode is disposed in the outer edge region.
1. An imaging device comprising:
an effective pixel region that includes a plurality of imaging elements-A, amplifies a signal charge generated by photoelectric conversion, and reads the signal charge into a drive circuit;
an optical black region that includes a plurality of imaging elements-B, surrounds the effective pixel region, and outputs optical black that serves as a reference for black level; and
an outer edge region that includes a plurality of imaging elements-C, and surrounds the optical black region, wherein
a photoelectric conversion layer forming the plurality of imaging elements-A, the plurality of imaging elements-B, and the plurality of imaging elements-C is a common photoelectric conversion layer, and
the imaging elements-C are always in an operating state during an operation of the imaging device.
2. The imaging device according to claim 1 , wherein
each of the imaging elements-A, the imaging elements-B, and the imaging elements-C includes
a photoelectric conversion unit in which a first electrode, the photoelectric conversion layer, and a second electrode are stacked,
the photoelectric conversion unit further includes a charge storage electrode that is disposed at a distance from the first electrode and is positioned to face the photoelectric conversion layer via an insulating layer,
the photoelectric conversion layer forming the imaging elements-A, the photoelectric conversion layer forming the imaging elements-B, and the photoelectric conversion layer forming the imaging elements-C are formed with the common photoelectric conversion layer,
the second electrode forming the imaging elements-A, the second electrode forming the imaging elements-B, and the second electrode forming the imaging elements-C are formed with a common second electrode,
during an operation of the imaging device, a potential with a sign that is the opposite of a sign of the signal charge is constantly applied to the first electrodes forming the imaging elements-C, and,
during an operation of the imaging device, a potential with the same sign as the sign of the signal charge is applied to the charge storage electrodes forming the imaging elements-C.
3. The imaging device according to claim 1 , wherein a thickness of an insulating layer forming the imaging elements-C is smaller than a thickness of an insulating layer forming the imaging elements-A and the imaging elements-B.