Solid-state imaging device
A solid-state imaging device includes an imaging element group in which imaging elements each having a photoelectric conversion portion 10 formed on or above a semiconductor substrate 70 and further having a wire grid polarizer 91 and an on-chip microlens 15 are arrayed in a two-dimensional matrix, and a first interlayer insulating layer 83 and a second interlayer insulating layer 84 provided on a light incident side of the photoelectric conversion portions 10 . The wire grid polarizer 91 is provided between the first interlayer insulating layer 83 and the second interlayer insulating layer 84 , and the on-chip microlens 15 is provided on the second interlayer insulating layer 84 . The first interlayer insulating layer 83 and the second interlayer insulating layer 84 include an oxide material or a resin material, and the on-chip microlens includes SiN or SiON.
1. A solid-state imaging device comprising:
an imaging element group in which imaging elements each having a photoelectric conversion portion formed on or above a semiconductor substrate and further having a wire grid polarizer and an on-chip microlens are arrayed in a two-dimensional matrix; and
a first interlayer insulating layer and a second interlayer insulating layer provided on a light incident side of the photoelectric conversion portions, wherein
the wire grid polarizer is provided between the first interlayer insulating layer and the second interlayer insulating layer,
the on-chip microlens is provided on the second interlayer insulating layer,
the first interlayer insulating layer is disposed below the wire grid polarizer and includes an oxide material and the second interlayer insulating layer is disposed above the wire grid polarizer and includes a resin material,
the on-chip microlens includes silicon nitride or silicon oxynitride,
the first interlayer insulating layer is structured such that a first interlayer insulating layer-lower layer and a first interlayer insulating layer-upper layer are stacked,
a light shielding portion is provided at a location between the first interlayer insulating layer-lower layer and the first interlayer insulating layer-upper layer positioned above a region between adjacent ones of the imaging elements,
the second interlayer insulating layer is structured such that a second interlayer insulating layer-lower layer and a second interlayer insulating layer-upper layer are stacked, and
a color filter layer is provided at a location between the second interlayer insulating layer-lower layer and the second interlayer insulating layer-upper layer positioned above each photoelectric conversion portion.
2. The solid-state imaging device according to claim 1
wherein the first interlayer insulating layer is made of a first material,
wherein the second interlayer insulating layer is made of a second material that is different from the first material,
and
wherein a refractive index of a material configuring the first interlayer insulating layer is n 1 , a refractive index of a material configuring the second interlayer insulating layer is n 2 , and a refractive index of a material configuring the on-chip microlens is n 0 ,
n 0 −n 1 ≥0 and
n 0 −n 2 ≥0
are satisfied.
3. The solid-state imaging device according to claim 2 , wherein
the first interlayer insulating layer is structured such that the first interlayer insulating layer-lower layer, a first interlayer insulating layer-intermediate layer, and flail the first interlayer insulating layer-upper layer are stacked.
4. The solid-state imaging device according to claim 2 , wherein
the light shielding portion extends from the wire grid polarizer and is provided at a location between the wire grid polarizer and another wire grid polarizer.
5. A solid-state imaging device comprising:
an imaging element group in which imaging elements each having a photoelectric conversion portion formed on or above a semiconductor substrate and further having a wire grid polarizer and an on-chip microlens are arrayed in a two-dimensional matrix; and
a first interlayer insulating layer and a second interlayer insulating layer provided on a light incident side of the photoelectric conversion portions, wherein
the wire grid polarizer is provided between the first interlayer insulating layer and the second interlayer insulating layer,
the on-chip microlens is provided on the second interlayer insulating layer,
the first interlayer insulating layer is disposed below the wire grid polarizer and includes an oxide material and the second interlayer insulating layer is disposed above the wire grid polarizer and includes a resin material,
the on-chip microlens includes silicon nitride or silicon oxynitride,
the first interlayer insulating layer is structured such that a first interlayer insulating layer-lower layer, a first interlayer insulating layer-intermediate layer, and a first interlayer insulating layer-upper layer are stacked,
a light shielding portion is provided at a location between the first interlayer insulating layer-lower layer and the first interlayer insulating layer-intermediate layer positioned above a region between adjacent ones of the imaging elements, and
a color filter layer is provided at a location between the first interlayer insulating layer-intermediate layer and the first interlayer insulating layer-upper layer positioned above each photoelectric conversion portion.
6. A solid-state imaging device comprising:
an imaging element group in which imaging elements each having a photoelectric conversion portion formed on or above a semiconductor substrate and further having a wire grid polarizer and an on-chip microlens are arrayed in a two-dimensional matrix; and
a first interlayer insulating layer and a second interlayer insulating layer provided on a light incident side of the photoelectric conversion portions, wherein
the wire grid polarizer is provided between the first interlayer insulating layer and the second interlayer insulating layer,
the on-chip microlens is provided on the second interlayer insulating layer,
the first interlayer insulating layer is disposed below the wire grid polarizer and includes an oxide material and the second interlayer insulating layer is disposed above the wire grid polarizer and includes a resin material,
the on-chip microlens includes silicon nitride or silicon oxynitride,
a light shielding portion extending from the wire grid polarizer is provided at a location between a wire grid polarizer and another wire grid polarizer positioned above a region between adjacent ones of the imaging elements,
the second interlayer insulating layer is structured such that a second interlayer insulating layer-lower layer and a second interlayer insulating layer-upper layer are stacked, and
a color filter layer is provided at a location between the second interlayer insulating layer-lower layer and the second interlayer insulating layer-upper layer positioned above each photoelectric conversion portion.
7. A solid-state imaging device comprising:
an imaging element group in which imaging elements each having a photoelectric conversion portion formed on or above a semiconductor substrate and further having a wire grid polarizer and an on-chip microlens are arrayed in a two-dimensional matrix; and
a first interlayer insulating layer and a second interlayer insulating layer provided on a light incident side of the photoelectric conversion portions, wherein
the wire grid polarizer is provided between the first interlayer insulating layer and the second interlayer insulating layer,
the on-chip microlens is provided on the second interlayer insulating layer,
the first interlayer insulating layer is disposed below the wire grid polarizer and includes an oxide material and the second interlayer insulating layer is disposed above the wire grid polarizer and includes a resin material,
the on-chip microlens includes silicon nitride or silicon oxynitride,
the first interlayer insulating layer is structured such that a first interlayer insulating layer-lower layer and a first interlayer insulating layer-upper layer are stacked,
a color filter layer is provided at a location between the first interlayer insulating layer-lower layer and the first interlayer insulating layer-upper layer positioned above each photoelectric conversion portion, and
a light shielding portion extending from the wire grid polarizer is provided at a location between a wire grid polarizer and another wire grid polarizer positioned above a region between adjacent ones of the imaging elements.