Semiconductor device structure with a fine pattern
The present application discloses a semiconductor device structure. The semiconductor device structure includes a dielectric layer over a substrate, a first ring structure over the dielectric layer, and a second ring structure over the dielectric layer and surrounding the first ring structure, wherein the first and the second ring structures have a first common center.
1. A semiconductor device structure, comprising:
a substrate;
a dielectric layer disposed over the substrate;
a first ring structure disposed over the dielectric layer; and
a second ring structure disposed over the dielectric layer and surrounding the first ring structure, wherein the first ring structure and the second ring structure have a first common center, and
wherein a first opening surrounded by the first ring structure has a width in a cross-sectional view, and the width is substantially the same as a distance between the first ring structure and the second ring structure in the cross-sectional view.
2. The semiconductor device structure of claim 1 , wherein the width of the first opening is substantially the same as a width of the first ring structure in the cross-sectional view.
3. The semiconductor device structure of claim 2 , wherein the width of the first ring structure is substantially the same as a width of the second ring structure in the cross-sectional view.
4. The semiconductor device structure of claim 1 , wherein a top surface of the substrate is exposed by the first opening.
5. The semiconductor device structure of claim 1 , wherein the dielectric layer is made of a first material, the first ring structure and the second ring structure are made of a second material, and the first material is different from the second material.
6. The semiconductor device structure of claim 1 , wherein the first ring structure and the second ring structure have similar shapes in a top view, and the first opening is circular or rectangular with rounded corners in the top view.
7. The semiconductor device structure of claim 1 , further comprising:
a third ring structure disposed over the dielectric layer; and
a fourth ring structure disposed over the dielectric layer and surrounding the third ring structure, wherein the third ring structure and the fourth ring structure have a second common center, and
wherein a distance between the fourth ring structure and the second ring structure is substantially the same as the distance between the first ring structure and the second ring structure in the cross-sectional view.