Semiconductor package and method
In an embodiment, a device includes: a back-side redistribution structure including: a metallization pattern on a first dielectric layer; and a second dielectric layer on the metallization pattern; a through via extending through the first dielectric layer to contact the metallization pattern; an integrated circuit die adjacent the through via on the first dielectric layer; a molding compound on the first dielectric layer, the molding compound encapsulating the through via and the integrated circuit die; a conductive connector extending through the second dielectric layer to contact the metallization pattern, the conductive connector being electrically connected to the through via; and an intermetallic compound at the interface of the conductive connector and the metallization pattern, the intermetallic compound extending only partially into the metallization pattern.
1. A device comprising:
a redistribution structure comprising:
a first dielectric layer;
a second dielectric layer; and
a metallization pattern between the first dielectric layer and the second dielectric layer, the metallization pattern comprising a pure copper portion and an intermetallic compound portion, the intermetallic compound portion thicker than the pure copper portion; and
a through via extending through the first dielectric layer to contact the metallization pattern;
an integrated circuit die adjacent the through via on the first dielectric layer;
a molding compound on the first dielectric layer, the molding compound encapsulating the through via and the integrated circuit die; and
a conductive connector extending through the second dielectric layer to contact the metallization pattern, the intermetallic compound portion disposed between the conductive connector and the pure copper portion,
wherein a first portion of the conductive connector extending through the second dielectric layer has a first width, a second portion of the conductive connector outside the second dielectric layer has a second width, and the ratio of the second width to the first width is between 1 and 1.53.
2. The device of claim 1 , wherein the metallization pattern has a thickness of from about 6 μm to about 10 μm.
3. The device of claim 2 , wherein the intermetallic compound portion has a thickness of less than about 6.5 μm.
4. The device of claim 2 , wherein the pure copper portion has a thickness of greater than about 0.5 μm.
5. The device of claim 1 , wherein the intermetallic compound portion has a third width, and the third width is greater than the first width.
6. The device of claim 5 , wherein the pure copper portion has a fourth width, and the third width is less than the fourth width.
7. The device of claim 1 , wherein the pure copper portion has a first portion and a second portion, the first portion aligned with a center of the conductive connector and a center of the through via, the second portion adjacent the first portion, the first portion having a first thickness, the second portion having a second thickness, the second thickness greater than the first thickness.
8. The device of claim 7 , wherein the intermetallic compound portion has a third thickness, the third thickness greater than the first thickness and less than the second thickness.
9. The device of claim 1 further comprising:
a first substrate comprising a bond pad, the bond pad contacting the conductive connector,
wherein the conductive connector comprises solder and copper, a concentration of the copper in the conductive connector decreasing through the conductive connector in a direction extending from the metallization pattern to the bond pad.
10. The device of claim 9 , wherein the bond pad comprises nickel.
11. A device comprising:
a first package comprising:
a first dielectric layer;
a second dielectric layer;
a metallization pattern between the first dielectric layer and the second dielectric layer, the metallization pattern comprising a pure copper layer and an intermetallic compound, a thickness of the intermetallic compound being greater than a thickness of the pure copper layer; and
a through via extending through the first dielectric layer, the through via connected to the metallization pattern;
a second package comprising a bond pad, the bond pad comprising a nickel layer; and
a conductive connector connecting the bond pad to the metallization pattern, the conductive connector comprising solder and copper, a concentration of copper in the conductive connector decreasing through the conductive connector in a direction extending from the first package to the second package, the intermetallic compound disposed between the conductive connector and a first portion of the pure copper layer.
12. The device of claim 11 , wherein a second portion of the pure copper layer is adjacent the intermetallic compound, a thickness of the second portion of the pure copper layer being greater than the thickness of the intermetallic compound and the thickness of the first portion of the pure copper layer.
13. The device of claim 12 , wherein the thickness of the intermetallic compound is from about 3 μm to about 6 μm.
14. The device of claim 12 , wherein the thickness of the first portion of the pure copper layer is from about 1 μm to about 2.5 μm.
15. The device of claim 12 , wherein the thickness of the second portion of the pure copper layer is from about 6 μm to about 10 μm.
16. The device of claim 11 , wherein the conductive connector has a first portion and a second portion, the first portion extending through the second dielectric layer, the second portion disposed outside of the second dielectric layer, the first portion having a first width, the second portion having a second width, the ratio of the second width to the first width being between 1 and 1.53.
17. A device comprising:
a first package comprising a bond pad;
a conductive connector connected to the bond pad; and
a second package comprising:
an integrated circuit die;
a molding compound encapsulating the integrated circuit die;
a first dielectric layer on the molding compound and the integrated circuit die;
a through via extending through the first dielectric layer and the molding compound;
a second dielectric layer on the first dielectric layer, the conductive connector extending through the second dielectric layer; and
a metallization pattern comprising a pure copper layer and an intermetallic compound, the pure copper layer having a first portion and a second portion, the first portion disposed between the first dielectric layer and the second dielectric layer, the second portion disposed between the through via and the intermetallic compound, the first portion having a first thickness, the second portion having a second thickness, the second thickness less than the first thickness, the intermetallic compound disposed between the conductive connector and the second portion, the intermetallic compound having a third thickness, the third thickness greater than the second thickness and less than the first thickness.
18. The device of claim 17 , wherein the conductive connector has a first portion and a second portion, the first portion extending through the second dielectric layer, the second portion being a widest portion of the conductive connector, the first portion having a first width, the second portion having a second width, the ratio of the second width to the first width being between 1 and 1.53.
19. The device of claim 17 , wherein the conductive connector has a first portion and a second portion, the first portion extending through the second dielectric layer, the second portion disposed outside of the second dielectric layer, the first portion having a first width, the second portion having a second width, the ratio of the second width to the first width being between 1 and 1.53.
20. The device of claim 17 , wherein the conductive connector comprises solder and copper, a concentration of copper in the conductive connector decreasing through the conductive connector in a direction extending from the metallization pattern to the bond pad.