Light emitting element

1. A light emitting element comprising:

a Si substrate having, in a top view, a quadrangular shape that extends in a longitudinal direction and a lateral direction, wherein the Si substrate is elongated in the longitudinal direction;

a semiconductor layered body formed of a nitride semiconductor and including:

a first semiconductor layer having, in a top view, a quadrangular shape that extends in the longitudinal direction and the lateral direction, and being disposed on an entire upper surface of the Si substrate,

a plurality of light emitting layers that are separated from each other and arranged in a matrix of a plurality of rows and a plurality of columns on parts of an upper surface of the first semiconductor layer, and

a plurality of second semiconductor layers respectively disposed on upper surfaces of the light emitting layers;

a first external connection electrode disposed on the Si substrate at a first end of the Si substrate in the longitudinal direction;

a second external connection electrode disposed on the Si substrate at a second end of the Si substrate opposite to the first end in the longitudinal direction; and

a plurality of wiring electrodes disposed on the Si substrate, the plurality of wiring electrodes including a first wiring electrode electrically connected to the first external connection electrode, and a second wiring electrode electrically connected to the second external connection electrode; wherein:

each of the wiring electrodes includes a first wiring part extending in the longitudinal direction of the Si substrate between two adjacent ones of the light emitting layers;

the light emitting layers are electrically connected to each other; and

wherein, in a top view, an entirety of each of the light emitting layers and an entirety of each of the second semiconductor layers are located in a region between the first external connection electrode and the second external connection electrode.

2. The light emitting element according to claim 1 , further comprising:

an insulating film located at a region excluding part of an upper surface of each of the second semiconductor layers;

wherein each of the wiring electrodes includes a second wiring part disposed on the insulating film to extend from the first wiring part in the lateral direction of the Si substrate; and

wherein the second wiring part is electrically connected to said part of the upper surface of at least one of the second semiconductor layers.

3. The light emitting element according to claim 2 , wherein a plurality of grooves extending in the lateral direction of the Si substrate are formed on a lower surface of the Si substrate that is opposite the upper surface of the Si substrate.

4. The light emitting element according to claim 2 , wherein the upper surface of the first semiconductor layer has a region having a grid like shape where the light emitting layer is absent as seen in a top view.

5. The light emitting element according to claim 4 , wherein a width of the region where the light emitting layer is absent as seen in the top view is a range of 1 μm to 20 μm.

6. The light emitting element according to claim 2 , wherein

a length of the first semiconductor layer in the longitudinal direction is in a range of 40 mm to 50 mm; and

a width of the first semiconductor layer in the lateral direction is in a range of 10 mm to 20 mm.

7. The light emitting element according to claim 2 , wherein a thickness of the semiconductor layered body is in a range of 5 μm to 10 μm.

8. The light emitting element according to claim 2 , further comprising a wavelength conversion layer on a side corresponding to an upper surface of the second semiconductor layers.

9. The light emitting element according to claim 2 , wherein a thickness of the Si substrate is 100 μm or less.

10. The light emitting element according to claim 1 , wherein a plurality of grooves extending in the lateral direction of the Si substrate are formed on a lower surface of the Si substrate that is opposite the upper surface of the Si substrate.

11. The light emitting element according to claim 10 , wherein the upper surface of the first semiconductor layer has a region having a grid like shape where the light emitting layer is absent as seen in a top view.

12. The light emitting element according to claim 10 , wherein

a length of the first semiconductor layer in the longitudinal direction is in a range of 40 mm to 50 mm; and

a width of the first semiconductor layer in the lateral direction is in a range of 10 mm to 20 mm.

13. The light emitting element according to claim 10 , wherein a thickness of the Si substrate is 100 μm or less.

14. The light emitting element according to claim 10 , wherein the plurality of grooves includes a first groove that extends in the lateral direction on the lower surface of the Si substrate at a location below a region between the first external connection electrode and the light emitting layers.

15. The light emitting element according to claim 14 , wherein the plurality of grooves includes a second groove that extends in the lateral direction on the lower surface of the Si substrate at a location below the first connection electrode.

16. The light emitting element according to claim 1 , wherein the upper surface of the first semiconductor layer has a region having a grid like shape where the light emitting layer is absent as seen in a top view.

17. The light emitting element according to claim 16 , wherein a width of the region where the light emitting layer is absent as seen in the top view is a range of 1 μm to 20 μm.

18. The light emitting element according to claim 1 , further comprising a wavelength conversion layer on a side corresponding to an upper surface of the second semiconductor layers.

19. The light emitting element according to claim 1 , wherein

a length of the first semiconductor layer in the longitudinal direction is in a range of 40 mm to 50 mm; and

a width of the first semiconductor layer in the lateral direction is in a range of 10 mm to 20 mm.

20. The light emitting element according to claim 1 , wherein a thickness of the semiconductor layered body is in a range of 5 μm to 10 μm.

21. The light emitting element according to claim 18 , wherein a thickness of the wavelength conversion layer is in a range of 1 mm to 3 mm.

22. The light emitting element according to claim 1 , wherein a thickness of the Si substrate is 100 μm or less.