Radio frequency active antenna system in a package
The wireless RF semiconductor system is described for use in wireless communication devices that operate in frequency range from approximately 6 GigaHertz (GHz) to 100 GHz. The system comprises of at least one RF antenna and at least one RF integrated circuit fabricated (or built) on the same semiconductor substrate inside a one single packaged module. The wireless RF semiconductor system is described in a variety of different configurations with its functionality divided up over several single chip circuits. The system simplifies assembly, reduces size and cost, and allows for a quick time to market, while maximizing the RF performance demanded by fixed and mobile 4G, 5G and other wireless standards. The system uses a novel idea of configuration and packaging of active and passive RF components into a single module. This in turn allows RF manufacturers to unlock the potential of very high frequencies operation that were previously thought too expensive and unattainable to average user. The wireless RF semiconductor system can be implemented in both mobile solutions (such as phones and tablets) and fixed applications (such as repeaters, base-stations, and distributed antenna systems).
1. A wireless radio frequency (RF) semiconductor single packaged Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) module comprising:
an RF antenna and an RF integrated circuit (RF IC) arranged with a ground plane located therebetween and spaced apart from a top surface of the RFIC, wherein the ground plane shields the RF IC from the RF antenna and is connected directly to a heat dissipator located at a bottom side of the RF IC; and
wherein the GaAs HBT module transmits or receives one or more RF frequency bands.
2. The module of claim 1 , wherein the ground plane encloses the RF IC to provide electromagnetic shielding from the RF antenna.
3. The module of claim 1 , wherein the RF antenna has a single or a dual polarization for a better signal reception and transmission.
4. The module of claim 1 , wherein the RF antenna can resonate and operate at different frequencies at the same time.
5. The module of claim 1 , wherein the RF antenna is capable of resonating at 28 GigaHertz (GHz) and 39 GHz at the same time.
6. The module of claim 1 , wherein the RF antenna is an array of elements.
7. The module of claim 1 , wherein the RF IC includes at least one of the group consisting of: a power amplifier, low noise amplifier, RF switch, phase-shifter, power sensor, and linearizer.
8. The module of claim 1 , wherein the RF IC is fabricated using semiconductor materials from the group consisting of: gallium arsenide (GaAs), gallium nitride (GaN), silicon germanium (SiGe), and complementary metal oxide semiconductor (CMOS).
9. The module of claim 1 , wherein the module operates in frequency range from 6 GigaHertz (GHz) to 100 GHz.
10. The module of claim 1 , wherein the physical location of the RF antenna relative to the module is on a top-side of the module.
11. The module of claim 1 , wherein the RF IC operates in at least one of: a single frequency and multi-band frequencies.
12. The module of claim 1 further comprising: at least one power management chip (PMIC) toprovide needed voltage for normal operation.
13. The module of claim 1 , wherein the module utilizes beam-forming or beam-steering to improve transmission or reception of the RF signal.
14. The module of claim 1 , wherein the module utilizes multiple input multiple output (MIMO) and single input multiple output (SIMO).
15. The module of claim 1 , wherein the module radiates power between 19 decibel milliwatts (dBm) to 73 dBm equivalent isotropically radiated power (EIRP).
16. The module of claim 1 , wherein the module is configured for linearizing using digital predistortion (DPD) or analog predistortion (ADP) to improve signal transmission.
17. The module of claim 1 , wherein the module comprises: at least two RF ICs which are configured to be combined to operate simultaneously to increase equivalent isotropically radiated power (EIRP) as desired.
18. The module of claim 1 further comprising: at least one of the group consisting of: a baseband chip, a transceiver chip, and an artificial intelligence (AI) chip.
19. The module of claim 1 , wherein the RF IC has at least one RF up or down frequency converter and mixer.
20. A wireless radio frequency (RF) semiconductor single packaged Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) array module comprising:
an RF antenna and an RF integrated circuit (RF IC) arranged with a ground plane located therebetween and spaced apart from a top surface of the RFIC, wherein the ground plane shields the RF IC from the RF antenna and is connected directly to a heat dissipator located at a bottom side of the RF IC; and
wherein the GaAs HBT array module performs beam-steering in at least one or more RF frequency bands and radiates power between approximately 19 decibel milliwatts (dBm) to 73 dBm equivalent isotropically radiated power (EIRP).