Display device
The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109 . An oxide film 110 as an insulating material is formed on the oxide semiconductor 109 . A gate electrode 111 is formed on the oxide film 110 . A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110 . A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
1. A display device comprising;
a substrate having a display region in which pixels are formed and peripheral region in which a drive circuit is formed,
a first TFT having an oxide semiconductor, and
a second TFT having a silicon semiconductor,
wherein
a first gate electrode of the first TFT is arranged above the oxide semiconductor,
a first insulating film is arranged between the oxide semiconductor and the first gate electrode,
a passivation film is formed on the first gate electrode and the first insulating film,
a first electrode is connected to a drain of the first TFT via a first through hole formed in the first insulating film and the passivation film,
a second electrode is connected to a source of the first TFT via a second through hole formed in the first insulating film and the passivation film,
each of the pixels includes the first TFT having the oxide semiconductor,
the first insulating film includes a first gate insulating film and a second gate insulating film,
the second TFT is arranged below the first TFT in a cross sectional view,
an interlayer insulation film is formed between the first TFT and the second TFT,
the second TFT has a second gate electrode and a second insulating film,
the drive circuit includes the second TFT having the silicon semiconductor, and
a metal film under the first TFT is formed on a same layer where the second gate electrode of the second TFT is formed.
2. The display device according to claim 1 , wherein the silicon semiconductor of the second TFT is polysilicon.
3. The display device according to claim 1 , wherein a thickness of the first insulating film is 5 to 50 nm.
4. The display device according to claim 1 , wherein the interlayer insulation film includes a first interlayer insulation film and a second interlayer insulation film.
5. The display device according to claim 1 , wherein the display region further includes another TFT having another silicon semiconductor.
6. The display device according to claim 1 , wherein the first insulating film is AlOx.
7. The display device according to claim 1 , wherein the first insulating film is formed of multiple layers of AlOx.
8. The display device according to claim 1 , wherein the display device is a liquid crystal display device.
9. The display device according to claim 1 , wherein the display device is an organic EL display device.
10. The display device according to claim 1 , wherein
the second insulating film is formed on the silicon semiconductor,
the second gate electrode of the second TFT is formed on the second insulating film,
the silicon semiconductor is formed between the second insulating film and the substrate.
11. The display device according to claim 1 , wherein the second gate insulation film overlaps the silicon semiconductor.
12. The display device according to claim 1 , wherein the second insulation film overlaps the oxide semiconductor.