IP Library Granted Patent US 11,523,504
Granted Patent B2
US 11,523,504 · App. 17/166,768 · Granted Dec 6, 2022

Anodic oxide film structure

Inventors: Bum Mo Ahn (Suwon, KR); Sung Hyun Byun (Hwaseong, KR); Tae Hwan Song (Cheonan, KR)
Assignee: POINT ENGINEERING CO., LTD.
H05K1/115C23C28/04C23C28/44G01R1/07342
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Quick Facts
Patent No.
US 11,523,504
App. No.
17/166,768
Granted
Dec 6, 2022
Kind
B2
Abstract

Proposed is an anodic oxide film structure that includes an anodic oxide film sheet and has high strength, chemical resistance and corrosion resistance.

Claims (12)

1. An anodic oxide film structure, comprising:

an anodic oxide film sheet comprising a non-porous barrier layer in which pores are not formed, and a porous layer disposed on a first surface of the non-porous barrier layer and having pores formed therein; and

a first thin film layer provided on a second surface of the non-porous barrier layer, the first surface being opposite to the second surface,

wherein the first thin film layer comprises a plurality of first monoatomic layers formed by repeatedly performing a cycle of adsorbing a first primary precursor and supplying a first secondary reactant different from the first primary precursor to form a first monoatomic layer through chemical substitution of the first primary precursor and the first secondary reactant.

2. The anodic oxide film structure of claim 1 , wherein a thickness of the first thin film layer falls in a range from 20 nm to 3 μm.

3. The anodic oxide film structure of claim 1 , wherein a thickness of the non-porous barrier layer falls in a range from 100 nm to 1 μm.

4. An anodic oxide film structure, comprising:

an anodic oxide film sheet comprising a non-porous barrier layer in which pores are not formed, a porous layer disposed on the non-porous barrier layer and having pores formed therein, and a through-hole provided in the anodic oxide film sheet, the through-hole being separate from the porous layer; and

a first thin film layer provided on at least one of a surface of the porous layer and a surface of the non-porous barrier layer and on an inner surface of the through-hole,

wherein the first thin film layer comprises a plurality of first monoatomic layers formed by repeatedly performing a cycle of adsorbing a first primary precursor and supplying a first secondary reactant different from the first primary precursor to form a first monoatomic layer through chemical substitution of the first primary precursor and the first secondary reactant.

5. The anodic oxide film structure of claim 1 , wherein a second thin film layer is formed on the first thin film layer, the second thin film layer comprising a plurality of second monoatomic layers formed by repeatedly performing a cycle of adsorbing a second primary precursor on the first thin film layer and supplying a second secondary reactant different from the second primary precursor to form a second monoatomic layer through chemical substitution of the second primary precursor and the second secondary reactant, and the first thin film layer and the second thin film layer have different components.

6. The anodic oxide film structure of claim 4 , wherein anodic oxide film sheets are vertically laminated and bonded to each other by a bonding layer, and a metal material is provided in the through-hole.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2021
From: AHN, BUM MO; BYUN, SUNG HYUN; SONG, TAE HWAN
To: POINT ENGINEERING CO., LTD.
Reel/Frame 055223/0173 →
Priority Claims (1)
KR 10-2020-0014270 · Feb 6, 2020 · national
Continuity (1)
Related Publication 20210251077A1 · Aug 12, 2021