Chemical vapor deposition process for depositing a coating and the coating formed thereby

1. A chemical vapor deposition process for depositing a coating, comprising:

providing a glass substrate;

forming a gaseous mixture comprising a silicon-containing compound, an oxygen-containing compound, a radical scavenger, and a titanium-containing compound;

feeding the gaseous mixture through a coating apparatus prior to forming the coating; and

discharging the gaseous mixture from the coating apparatus, directing the gaseous mixture toward and along the glass substrate, and reacting the mixture over the glass substrate to form the coating thereover, the coating having a refractive index of 1.48 or more;

wherein the gaseous mixture comprises 0.1 to 5% of the titanium-containing compound by volume.

2. The chemical vapor deposition process of claim 1 , wherein the coating comprises silicon oxide and titanium oxide, with a ratio of titanium to silicon of less than 1.

3. The chemical vapor deposition process of claim 1 , wherein the coating is formed directly on the glass substrate.

4. The chemical vapor deposition process of claim 2 , wherein the silicon oxide is silicon dioxide.

5. The chemical vapor deposition process of claim 2 , wherein the titanium oxide is titanium dioxide.

6. The chemical vapor deposition process of claim 1 , wherein the coating has a refractive index of 1.50 to 1.85.

7. The chemical vapor deposition process of claim 1 , wherein the glass substrate is moving at the time of forming the coating, or wherein the glass substrate is a float glass ribbon.

8. The chemical vapor deposition process of claim 1 , wherein the coating is formed at a dynamic deposition rate of 280 nm×m/min or more.

9. The chemical vapor deposition process of claim 1 , wherein the gaseous mixture is formed prior to being fed through the coating apparatus or within the coating apparatus.

10. The chemical vapor deposition process of claim 1 , wherein the silicon-containing compound is a silane compound.

11. The chemical vapor deposition process of claim 1 , wherein the oxygen-containing compound is molecular oxygen.

12. The chemical vapor deposition process of claim 1 , wherein the oxygen-containing compound is an inorganic oxygen-containing compound.

13. The chemical vapor deposition process of claim 1 , wherein the radical scavenger is ethylene or propylene.

14. The chemical vapor deposition process of claim 1 , wherein the titanium-containing compound is an inorganic titanium-containing compound.

15. The chemical vapor deposition process of claim 1 , wherein the titanium-containing compound is an organic titanium-containing compound.