Cascode semiconductor
This disclosure relates to a cascode HEMT semiconductor device including a lead frame, a die pad attached to the lead frame, and a HEMT die attached to the die pad. The HEMT die includes a HEMT source and a HEMT drain on a first side, and a HEMT gate on a second side. The device further includes a MOSFET die attached to the source of the HEMT die, and the MOSFET die includes a MOSFET source, a MOSFET gate and a MOSFET drain. The MOSFET drain is connected to the HEMT source, and the MOSFET source includes a MOSFET source clip. The MOSFET source clip includes a pillar so to connect the MOSFET source to the HEMT gate, and the connection between the MOSFET source to the HEMT gate is established by a conductive material.
1. A cascode high electron mobility (HEMT) semiconductor device comprising:
a lead frame;
a die pad attached to the lead frame;
a HEMT die attached to the die pad, wherein the HEMT die further comprises:
a HEMT source and a HEMT drain on a first side,
wherein the HEMT drain further comprises a HEMT drain clip, and
a HEMT gate on a second side,
a metal-oxide-semiconductor field-effect transistor (MOSFET) die attached to
a source of the HEMT die, wherein the MOSFET die further comprises:
a MOSFET source, a MOSFET gate and a MOSFET drain,
wherein the MOSFET drain is connected to the HEMT source,
wherein the MOSFET source further comprises a MOSFET source clip,
wherein the MOSFET source clip further comprises a pillar to connect the MOSFET source to the HEMT gate,
wherein the connection between the MOSFET source to the HEMT gate is established by a conductive material.
2. The cascode HEMT semiconductor device as claimed in claim 1 , wherein the device is a gallium nitride (GaN) device.
3. The cascode HEMT semiconductor device as claimed in claim 2 , wherein the MOSFET source clip further comprises multiple pillars to connect the MOSFET source to the HEMT gate.
4. The cascode HEMT semiconductor device as claimed in claim 1 , wherein the pillar is a 90 degrees pillar.
5. The cascode HEMT semiconductor device as claimed in claim 4 , wherein the MOSFET source clip further comprises multiple pillars to connect the MOSFET source to the HEMT gate.
6. An automotive part comprising the cascode HEMT semiconductor device as claimed in claim 4 .
7. The cascode HEMT semiconductor device as claimed in claim 1 , wherein the die pad further comprises an indentation, wherein the indentation is configured to avoid a direct contact between the die pad and the pillar.
8. The cascode HEMT semiconductor device as claimed in claim 7 , wherein the indentation is in a range between 10-100 μm.
9. The cascode HEMT semiconductor device as claimed in claim 8 , wherein the MOSFET source clip further comprises multiple pillars to connect the MOSFET source to the HEMT gate.
10. An automotive part comprising the cascode HEMT semiconductor device as claimed in claim 8 .
11. The cascode HEMT semiconductor device as claimed in claim 7 , wherein the indentation is about 50 μm.
12. The cascode HEMT semiconductor device as claimed in claim 11 , wherein the MOSFET source clip further comprises multiple pillars to connect the MOSFET source to the HEMT gate.
13. The cascode HEMT semiconductor device as claimed in claim 7 , wherein the MOSFET source clip further comprises multiple pillars to connect the MOSFET source to the HEMT gate.
14. An automotive part comprising the cascode HEMT semiconductor device as claimed in claim 7 .
15. The cascode HEMT semiconductor device as claimed in claim 1 , wherein the MOSFET source clip further comprises multiple pillars to connect the MOSFET source to the HEMT gate.
16. The cascode HEMT semiconductor device as claimed in claim 15 , wherein the die pad further comprises a separate indentation for each of the multiple pillars.
17. An automotive part comprising the cascode HEMT semiconductor device as claimed in claim 1 .
18. A method of forming a cascode high electron mobility (HEMT) semiconductor device comprising:
attaching a die pad attached to a lead frame;
attaching a HEMT die to the die pad, wherein the HEMT die further comprises:
a HEMT source and a HEMT drain on a first side, wherein the HEMT drain further comprises a HEMT drain clip, and
a HEMT gate on a second side; and
attaching a metal-oxide-semiconductor field-effect transistor (MOSFET) die to a source of the HEMT die, wherein the MOSFET die further comprises:
a MOSFET source, a MOSFET gate and a MOSFET drain,
wherein the MOSFET drain is connected to the HEMT source,
wherein the MOSFET source further comprises a MOSFET source clip,
wherein the MOSFET source clip further comprises a pillar to connect the MOSFET source to the HEMT gate, and
wherein the connection between the MOSFET source to the HEMT gate is established by a conductive material.