Group III-nitride Schottky diode
A Group III-Nitride (III-N) device structure is provided which comprises: a heterostructure having three or more layers comprising III-N material, an anode within a recess that extends through two or more of the layers, wherein the anode is in electrical contact with the first layer, a cathode comprising donor dopants, wherein the cathode is on the first layer of the heterostructure; and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.
1. A Group III-Nitride (III-N) device structure comprising:
a heterostructure having three or more layers comprising III-N material;
an anode that extends through two or more of the layers, wherein the anode comprises a metal in electrical contact with a first of the layers;
a cathode comprising an N-type III-N material comprising donor dopants, wherein the N-type III-N material extends through two or more of the layers and into at least a portion of the first layer of the heterostructure, and wherein the N-type III-N material comprises In and has a composition distinct from that of the first layer; and
a conducting region in a portion of the first layer adjacent to the cathode and coupled to the anode.
2. The III-N device structure of claim 1 , wherein the conducting region in the first layer is associated with polarization fields of a second of the layers.
3. The III-N device structure of claim 1 , wherein a Schottky barrier is between the conducting region in the first layer and the metal.
4. The III-N device structure of claim 1 , wherein the conducting region in the first layer extends below the anode.
5. The III-N device structure of claim 1 , wherein the first layer of the heterostructure comprises Ga and N and a second layer of the heterostructure comprises Al and N.
6. The III-N device structure of claim 1 , further comprising donor dopants in the first layer of the heterostructure comprising a delta doping layer or an implanted doping layer.
7. The III-N device structure of claim 1 , wherein the donor dopants have a concentration of at least 1e19 atoms/cm 3 within the N-type III-N material.
8. The III-N device structure of claim 1 , wherein the metal comprises Ni.
9. The III-N device structure of claim 1 , wherein the donor dopants have a concentration of at least 1e20 atoms/cm 3 within the N-type III-N material.
10. A computer platform comprising:
one or more transceivers;
a processor communicatively coupled to the transceivers; and
an antenna coupled to the transceiver, wherein the transceiver is coupled to a III-N device comprising:
a heterostructure having three or more layers comprising III-N material, wherein a first layer of the heterostructure comprises donor dopants;
an anode that extends through two or more of the layers, wherein the anode comprises a metal in electrical contact with a first of the layers; and
a cathode comprising an N-type III-N material comprising donor dopants, wherein the N-type III-N material extends through two or more of the layers and into at least a portion of the first layer of the heterostructure, and wherein the N-type III-N material comprises In and has a composition distinct from that of the first layer.
11. The computer platform of claim 10 , wherein the first layer of the heterostructure comprises Ga and N and a second layer of the heterostructure comprises Al and N.
12. The computer platform of claim 10 , wherein the metal comprises Ni.
13. A computer platform comprising:
one or more transceivers;
a processor communicatively coupled to the transceivers; and
an antenna coupled to the transceiver, wherein the transceiver is coupled to a III-N device comprising:
a heterostructure having three or more layers comprising III-N material, wherein a first layer of the heterostructure comprises donor dopants;
an anode within a recess that extends through two or more of the layers, wherein the anode is in electrical contact with the first layer and wherein the anode comprises a first width within the recess and a second width beyond the recess;
a cathode comprising donor dopants, wherein the cathode is on the first layer of the heterostructure and wherein the cathode extends beyond the heterostructure; and
a second anode between the cathode and the anode.
14. A method of forming a Group III-Nitride (III-N) device structure, the method comprising:
forming a heterostructure comprising three or more III-N material layers, wherein a first layer of the heterostructure comprises donor dopants;
forming a cathode semiconductor within a first recess that extends through two or more of the layers and at least a portion of the first layer of the heterostructure, wherein forming the cathode semiconductor further comprises introducing the donor dopants to a concentration of at least 1e19 atoms/cm 3 within a III-N material comprising In; and
forming an anode within a second recess that extends through two or more of the layers, wherein the anode comprises a metal in electrical contact with the first layer.
15. The method of claim 14 , wherein forming the heterostructure comprises forming the first layer of the heterostructure comprising Ga and N, and forming a second layer of the heterostructure comprising Al and N directly on the first layer.
16. The method of claim 14 , wherein forming the anode comprises depositing the metal into the second recess and on a surface of the first layer.
17. The method of claim 14 , wherein forming the anode comprises depositing Ni into the second recess.
18. The method of claim 14 , wherein forming the anode comprises forming an anode having six outer sides.