Display device and method of manufacturing the same
Disclosed is a display device configured such that a mixture of a transition metal and an organic material is used as a cathode, whereby the cathode exhibits low resistance, high transmittance, high reliability, and high performance in the state in which the cathode is thin.
1. A display device, comprising:
an anode at each of a plurality of light-emitting portions of a substrate;
an emissive layer over the anode; and
a cathode above the emissive layers to overlap the plurality of light-emitting portions of the substrate, the cathode comprising a transition metal and a fullerene complexed with the transition metal.
2. The display device according to claim 1 , wherein the fullerene is a carbon aggregate having a number of carbon atoms of 20 or more.
3. The display device according to claim 1 , wherein the fullerene has a spherical shape or an oval shape.
4. The display device according to claim 3 , wherein the transition metal is located in the spherical shape or the oval shape, the transition metal being complexed with one or more carbons of fullerene.
5. The display device according to claim 1 , wherein the transition metal is located outside the fullerene, the transition metal being complexed with one or more carbons of fullerene.
6. The display device according to claim 1 , wherein a content of the fullerene is 10 vol % or less with respect to a total volume of the cathode.
7. The display device according to claim 1 , further comprising an electron injection layer between the emissive layer and the cathode, the electron injection layer comprising a lanthanide metal.
8. The display device according to claim 1 , wherein the transition metal comprises scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), or combinations thereof.
9. The display device according to claim 1 , further comprising a capping layer over a top of the cathode.
10. The display device according to claim 9 , further comprising an inorganic encapsulation layer over a top and sides of the capping layer.
11. The display device according to claim 1 , wherein the transition metal of the cathode is a reflective metal.
12. The display device according to claim 1 , wherein the cathode has a thickness of 50 Å to 140 Å.
13. The display device according to claim 1 , wherein the substrate further comprises a transmission unit between the plurality of light-emitting portions.
14. The display device according to claim 13 , wherein the cathode does not overlap the transmission unit.
15. The display device according to claim 13 , wherein a portion of the transmission unit corresponds to a lens of a camera located at a backside of the substrate opposite to the anode.
16. The display device according to claim 1 , wherein the substrate has a hole, the cathode being spaced apart from the hole by a predetermined distance.
17. A method of manufacturing a display device, the method comprising:
forming an anode at each of a plurality of light-emitting portions of a substrate;
depositing an emissive layer on the anode; and
co-depositing a transition metal and a fullerene on the emissive layers to provide a cathode.
18. The method according to claim 17 , wherein the providing the cathode comprises selectively performing deposition to overlap only the emissive layers.