Shear-mode chemical/physical sensor for liquid environment sensing and method for producing the same
Methods of forming a shear-mode chemical/physical sensor for liquid environment sensing on V-shaped grooves of a [100] crystal orientation Si layer and the resulting devices are provided. Embodiments include forming a set of V-shaped grooves in a [100] Si layer over a substrate; forming an acoustic resonator over and along the V-shaped grooves, the acoustic resonator including a first metal layer, a thin-film piezoelectric layer, and a second metal layer in an IDT pattern or a sheet; and forming at least one functional layer along a slope of the acoustic resonator.
1. A method comprising:
forming a set of V-shaped grooves in a [100] crystal orientation silicon (Si) layer over a substrate;
forming an acoustic resonator over and along the V-shaped grooves, the acoustic resonator comprising a first metal layer, a thin-film piezoelectric layer, and a second metal layer in an interdigitated (IDT) pattern or a sheet; and
forming a functional layer along at least one slope of the acoustic resonator.
2. The method according to claim 1 , further comprising (1) forming the functional layer along opposing slopes of the acoustic resonator; (2) forming the functional layer along an opposing slope of the acoustic resonator and a second functional layer along an opposite opposing slope of the acoustic resonator; (3) forming a plurality of functional layers along opposing slopes of the acoustic resonator; or (4) forming one or more functional layers along opposing slopes of one or more portions of the acoustic resonator.
3. The method according to claim 1 , further comprising forming a cavity in the [100] crystal orientation Si layer under the acoustic resonator subsequent to the forming the acoustic resonator.
4. The method according to claim 1 , further comprising:
forming a Bragg reflector along the V-shaped grooves prior to forming the acoustic resonator; and
forming the acoustic resonator over and along opposing slopes of the Bragg reflector.
5. The method according to claim 4 , further comprising forming an acoustic waveguide layer over and along opposing slopes of the acoustic resonator or sequentially forming an acoustic waveguide layer, an intermediate adhesive layer, and an extra acoustic liquid trap layer over and along opposing slopes of the acoustic resonator.
6. The method according to claim 1 , further comprising:
forming a Bragg reflector along the V-shaped grooves prior to forming the acoustic resonator;
forming the acoustic resonator over and along opposing slopes of the Bragg reflector; and
forming a cavity in the [100] crystal orientation Si layer under the Bragg reflector subsequent to the forming of the acoustic resonator.
7. The method according to claim 6 , further comprising forming an acoustic waveguide layer over and along opposing slopes of the acoustic resonator or sequentially forming an acoustic waveguide layer, an intermediate adhesive layer, and an extra acoustic liquid trap layer over and along opposing slopes of the acoustic resonator.
8. The method according to claim 1 , further comprising:
forming a cap cavity over the set subsequent to the forming of the at least one functional layer;
forming a capping layer over the cap cavity; and
forming an inlet and an outlet, laterally separated, through the capping layer down to the cap cavity.
9. The method according to claim 1 , further comprising:
forming a liquid layer containing a particle or a chemical element over the set,
wherein the particle or the chemical element is sensed by the acoustic resonator based on a shear-mode acoustic wave resonation.
10. A device comprising:
a set of V-shaped grooves in a [100] crystal orientation silicon (Si) layer over a substrate;
an acoustic resonator over and along the V-shaped grooves, the acoustic resonator comprising a first metal layer, a thin-film piezoelectric layer, and a second metal layer of the acoustic resonator in an interdigitated (IDT) pattern or a sheet, wherein portions of the second metal layer are disposed in the V-shaped grooves; and
a functional layer for binding to chemicals or particles in a liquid environment, wherein the functional layer is disposed along at least one slope of the acoustic resonator.
11. The device according to claim 10 , wherein device comprises a shear-mode acoustic sensor, a mass sensor, a chemical sensor, a multi-channel biological sensor, or a biological sensor array.
12. The device according to claim 10 , further comprising (1) the functional layer along opposing slopes of the acoustic resonator; (2) the functional layer along an opposing slope of the acoustic resonator and a second functional layer along an opposite opposing slope of the acoustic resonator; (3) a plurality of functional layers along opposing slopes of the acoustic resonator; or (4) one or more functional layers along opposing slopes of one or more portions of the acoustic resonator.
13. The device according to claim 10 , further comprising a cavity in the [100] crystal orientation Si layer under the acoustic resonator.
14. The device according to claim 10 , further comprising:
a Bragg reflector along the V-shaped grooves; and
the acoustic resonator over and along opposing slopes of the Bragg reflector.
15. The device according to claim 14 , further comprising an acoustic waveguide layer over and along opposing slopes of the acoustic resonator or an acoustic waveguide layer, an intermediate adhesive layer, and an extra acoustic liquid trap layer sequentially formed over and along opposing slopes of the acoustic resonator.
16. The device according to claim 10 , further comprising:
a Bragg reflector along the V-shaped grooves;
the acoustic resonator over and along opposing slopes of the Bragg reflector; and
a cavity in the [100] crystal orientation Si layer under the Bragg reflector.
17. The device according to claim 16 , further comprising an acoustic waveguide layer over and along opposing slopes of the acoustic resonator or an acoustic waveguide layer, an intermediate adhesive layer, and an extra acoustic liquid trap layer sequentially formed over and along opposing slopes of the acoustic resonator.
18. A method comprising:
forming a set of V-shaped grooves in a [100] crystal orientation silicon (Si) layer over a substrate;
forming a Bragg reflector along the V-shaped grooves;
forming an acoustic resonator over and along opposing slopes of the Bragg reflector, the acoustic resonator comprising a first metal layer, a thin-film piezoelectric layer, and
a second metal layer in an interdigitated (IDT) pattern or a sheet;
forming a cavity in the [100] crystal orientation Si layer under the Bragg reflector; and
forming at least one functional layer along a slope of the acoustic resonator.
19. The method according to claim 18 , further comprising:
forming the set of V-shaped grooves by a wet etch or a dry etch: and
(1) forming the functional layer along opposing slopes of the acoustic resonator; (2) forming the functional layer along an opposing slope of the acoustic resonator and a second functional layer along an opposite opposing slope of the acoustic resonator; (3) forming a plurality of functional layers along opposing slopes of the acoustic resonator; or (4) forming one or more functional layers along opposing slopes of one or more portions of the acoustic resonator.
20. The method according to claim 18 , further comprising forming an acoustic waveguide layer over and along opposing slopes of the acoustic resonator or sequentially forming an acoustic waveguide layer, an intermediate adhesive layer, and an extra acoustic liquid trap layer over and along opposing slopes of the acoustic resonator.