Metamaterial edge couplers in the back-end-of-line stack of a photonics chip
Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.
1. A structure for an edge coupler, the structure comprising:
a dielectric layer;
a waveguide core over the dielectric layer, the waveguide core including a tapered section; and
a back-end-of-line stack over the waveguide core and the dielectric layer, the back-end-of-line stack including an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature, the first feature, the second feature, and the third feature positioned on the interlayer dielectric layer adjacent to the side edge, the third feature having an overlapping relationship with the tapered section of the waveguide core, the first feature having an end surface adjacent to the side edge of the back-end-of-line stack, the second feature having an end surface adjacent to the side edge of the back-end-of-line stack, and the third feature having a first end surface adjacent to the side edge of the back-end-of-line stack and a second end surface above the tapered section of the waveguide core,
wherein the waveguide core includes an end surface that is coextensive with the side edge of the back-end-of-line stack, and the end surface of the first feature, the end surface of the second feature, and the first end surface of the third feature are coextensive with the side edge of the back-end-of-line stack.
2. The structure of claim 1 wherein the first feature, the second feature, and the third feature comprise nitrogen-doped silicon carbide or hydrogenated nitrogen-doped silicon carbide.
3. The structure of claim 1 wherein the first feature, the second feature, and the third feature comprise a dielectric material having a refractive index that is greater than or equal to 1.65.
4. The structure of claim 1 wherein the third feature is centered over the tapered section of the waveguide core.
5. The structure of claim 1 wherein the third feature has a longitudinal axis, the first feature curves away from the longitudinal axis of the third feature in a first direction, and the second feature curves away from the longitudinal axis of the third feature in a second direction opposite from the first direction.
6. The structure of claim 1 wherein the first feature is laterally spaced from the third feature by a first spacing that increases with increasing distance from the side edge of the back-end-of-line stack, and the second feature is laterally spaced from the third feature by a second spacing that increases with increasing distance from the side edge of the back-end-of-line stack.
7. The structure of claim 6 wherein the third feature has a longitudinal axis, the first feature curves away from the longitudinal axis of the third feature to provide the first spacing that increases with increasing distance from the side edge of the back-end-of-line stack, and the second feature curves away from the longitudinal axis of the third feature to provide the second spacing that increases with increasing distance from the side edge of the back-end-of-line stack.
8. The structure of claim 1 wherein the tapered section of the waveguide core terminates at the end surface of the waveguide core.
9. The structure of claim 1 wherein the back-end-of-line stack includes a second interlayer dielectric layer and a fourth feature that is positioned in the second interlayer dielectric layer adjacent to the side edge of the back-end-of-line stack, and the fourth feature has an overlapping relationship with the tapered section of the waveguide core.
10. The structure of claim 9 wherein the back-end-of-line stack includes a fifth feature and a sixth feature positioned in the second interlayer dielectric layer adjacent to the side edge of the back-end-of-line stack, the fourth feature is laterally arranged between the fifth feature and the sixth feature, and the fourth feature has an overlapping relationship with the third feature.
11. The structure of claim 10 wherein the first feature, the second feature, and the third feature comprise nitrogen-doped silicon carbide or hydrogenated nitrogen-doped silicon carbide, and the fourth feature, the fifth feature, and the sixth feature comprise nitrogen-doped silicon carbide or hydrogenated nitrogen-doped silicon carbide.
12. A method of forming a structure for an edge coupler, the method comprising:
forming a waveguide core over a dielectric layer; and
forming a back-end-of-line stack over the waveguide core and the dielectric layer that includes a first interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature,
wherein the first feature, the second feature, and the third feature are positioned on the first interlayer dielectric layer adjacent to the side edge, the third feature has an overlapping relationship with a tapered section of the waveguide core, the first feature has an end surface adjacent to the side edge of the back-end-of-line stack, the second feature has an end surface adjacent to the side edge of the back-end-of-line stack, the third feature has a first end surface adjacent to the side edge of the back-end-of-line stack and a second end surface above the tapered section of the waveguide core, the waveguide core includes an end surface that is coextensive with the side edge of the back-end-of-line stack, and the end surface of the first feature, the end surface of the second feature, and the first end surface of the third feature are coextensive with the side edge of the back-end-of-line stack.
13. The method of claim 12 wherein the first feature, the second feature, and the third feature comprise nitrogen-doped silicon carbide or hydrogenated nitrogen-doped silicon carbide.
14. The method of claim 12 wherein the third feature has a longitudinal axis, the first feature curves away from the longitudinal axis of the third feature in a first direction, and the second feature curves away from the longitudinal axis of the third feature in a second direction opposite from the first direction.
15. The method of claim 12 comprising:
forming a fourth feature that is positioned on a second interlayer dielectric layer of the back-end-of-line stack adjacent to the side edge and that has an overlapping relationship with the tapered section of the waveguide core.
16. The structure of claim 15 further comprising:
forming a fifth feature and a sixth feature positioned on the second interlayer dielectric layer of the back-end-of-line stack adjacent to the side edge,
wherein the fourth feature is laterally between the fifth feature and the sixth feature, and the fourth feature has an overlapping relationship with the third feature.