Acoustic wave resonator, filter, and multiplexer
An acoustic wave resonator includes: a piezoelectric substrate; and an interdigital transducer (IDT) located on the piezoelectric substrate, the IDT including a pair of comb-shaped electrodes having a plurality of electrode fingers and a bus bar to which the plurality of electrode fingers are coupled, the IDT having: a first region in which a pitch of electrode fingers is substantially constant; a second region in which a pitch of electrode fingers decreases at closer distances to an outer side; and a third region in which a pitch of electrode fingers increases at closer distances to an outer side, the second region being located outside the first region in an arrangement direction of the plurality of electrode fingers, and the third region being located outside the second region in the arrangement direction.
1. An acoustic wave resonator comprising:
a piezoelectric substrate;
an interdigital transducer (IDT) located on the piezoelectric substrate, the IDT including a pair of comb-shaped electrodes having a plurality of electrode fingers and a bus bar to which the plurality of electrode fingers are coupled, the IDT having: a first region in which a pitch of electrode fingers is substantially constant; a second region in which a pitch of electrode fingers decreases at closer distances to an outer side; and a third region in which a pitch of electrode fingers increases at closer distances to an outer side, the second region being located outside the first region in an arrangement direction of the plurality of electrode fingers, and the third region being located outside the second region in the arrangement direction; and
a reflector located on the piezoelectric substrate and located outside the IDT in the arrangement direction,
wherein a region in which a pitch of electrode fingers is substantially constant is not located between the third region and the reflector.
2. The acoustic wave resonator according to claim 1 , wherein
the first region is in contact with the second region, and
the second region is in contact with the third region.
3. The acoustic wave resonator according to claim 1 , wherein
a pitch of electrode fingers closest to the first region in the second region is equal to or less than the pitch of the electrode fingers in the first region;
a pitch of electrode fingers closest to the second region in the third region is equal to or less than a pitch of electrode fingers closest to the third region in the second region.
4. The acoustic wave resonator according to claim 1 , wherein
the pitch changes at a constant rate in each of the second region and the third region.
5. The acoustic wave resonator according to claim 1 , wherein
a number of the electrode fingers in the second region is equal to a number of the electrode fingers in the third region.
6. The acoustic wave resonator according to claim 1 , wherein
the piezoelectric substrate is a lithium tantalate substrate or a lithium niobate substrate.
7. A filter comprising:
an acoustic wave resonator including:
a piezoelectric substrate;
an interdigital transducer (IDT) located on the piezoelectric substrate, the IDT including a pair of comb-shaped electrodes having a plurality of electrode fingers and a bus bar to which the plurality of electrode fingers are coupled, the IDT having: a first region in which a pitch of electrode fingers is substantially constant; a second region in which a pitch of electrode fingers decreases at closer distances to an outer side; and a third region in which a pitch of electrode fingers increases at closer distances to an outer side, the second region being located outside the first region in an arrangement direction of the plurality of electrode fingers, and the third region being located outside the second region in the arrangement direction; and
a reflector located on the piezoelectric substrate and located outside the IDT in the arrangement direction,
wherein a region in which a pitch of electrode fingers is substantially constant is not located between the third region and the reflector.
8. The filter according to claim 7 , further comprising:
one or more series resonators connected in series between an input terminal and an output terminal; and
one or more parallel resonators connected in parallel between the input terminal and the output terminal, wherein
at least one of the one or more series resonators is the acoustic wave resonator.
9. A multiplexer comprising:
a filter including an acoustic wave resonator, wherein
the acoustic wave resonator includes:
a piezoelectric substrate;
an interdigital transducer (IDT) located on the piezoelectric substrate, the IDT including a pair of comb-shaped electrodes having a plurality of electrode fingers and a bus bar to which the plurality of electrode fingers are coupled, the IDT having: a first region in which a pitch of electrode fingers is substantially constant; a second region in which a pitch of electrode fingers decreases at closer distances to an outer side; and a third region in which a pitch of electrode fingers increases at closer distances to an outer side, the second region being located outside the first region in an arrangement direction of the plurality of electrode fingers, and the third region being located outside the second region in the arrangement direction; and
a reflector located on the piezoelectric substrate and located outside the IDT in the arrangement direction,
wherein a region in which a pitch of electrode fingers is substantially constant is not located between the third region and the reflector.
10. The acoustic wave resonator according to claim 1 ,
wherein:
the reflector is provided in a pair, and the pair of reflectors are located on both outer sides of the IDT in the arrangement direction,
the second region is provided in a pair, and one of the pair of second regions is located between the first region and one of the pair of reflectors, and anther of the pair of second regions is located between the first region and another of the pair of reflectors,
the third region is provided in a pair, and one of the pair of third regions is located between the one of the pair of second regions and the one of the pair of reflectors, and anther of the pair of third regions is located between the another of the pair of second regions and the another of the pair of reflectors,
a difference between a pitch of the electrode fingers closest to the first region in the one of the pair of second regions and a pitch of the electrode fingers closest to the one of the pair of third regions in the one of the pair of second regions is equal to a difference between a pitch of the electrode fingers closest to the first region in the another of the pair of second regions and a pitch of the electrode fingers closest to the another of the pair of third regions in the anther of the pair of second regions, and
a difference between a pitch of the electrode fingers closest to the one of the pair of second regions in the one of the pair of third regions and a pitch of the electrode fingers closest to the one of the pair of reflectors in the one of the pair of third regions is equal to a difference between a pitch of the electrode fingers closest to the another of the pair of the second regions in the another of the pair of third regions and a pitch of the electrode fingers closest to the another of the pair of reflectors in the anther of the pair of third regions.