IP Library Granted Patent US 11,577,491
Granted Patent B2
US 11,577,491 · App. 16/961,741 · Granted Feb 14, 2023

Metallic lustrous member with radio wave transmissibility, article using same, and production method therefor

Inventors: Xiaolei Chen (Baraki, JP); Hironobu Machinaga (Baraki, JP); Hajime Nishio (Baraki, JP); Taichi Watanabe (Baraki, JP); Takahiro Nakai (Baraki, JP)
Assignee: NITTO DENKO CORPORATION
B32B15/20B32B3/14B32B15/09B32B17/061B32B27/308B32B27/32B32B27/365C23C14/086C23C14/14B32B2250/02B32B2250/03B32B2250/44B32B2307/70B32B2311/24B32B2315/08B32B2323/00B32B2367/00B32B2369/00C03C2217/252C03C2217/27
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Quick Facts
Patent No.
US 11,577,491
App. No.
16/961,741
Filed
Jul 13, 2020
Granted
Feb 14, 2023
Kind
B2
Art Unit
1787
USPC
428/458
Abstract

A metallic lustrous member with radio wave transmissibility is provided, which is capable of being easily produced, while ensuring a structure in which not only chromium or indium but also any of some other metals such as aluminum is formed as a metal layer on a continuous surface of any of various materials, and also an article using the member is provided. A production method for a metallic lustrous member with radio wave transmissibility, which is capable of easily forming, as a metal layer, not only chromium or indium but also any of some other metals such as aluminum, on a continuous surface of any of various materials. The metallic lustrous member comprises a substrate having radio wave transmissibility, and an aluminum layer formed directly on a continuous surface of the substrate. The aluminum layer has a discontinuous region including a plurality of separated segments which are mutually discontinuous.

Claims (20)

1. A metallic lustrous member with radio wave transmissibility, comprising:

a substrate having radio wave transmissibility;

a continuous indium oxide-containing layer on a surface of the substrate; and

an aluminum layer formed directly on the continuous indium oxide-containing layer on the surface of the substrate wherein

the aluminum layer is formed by alternating current (AC) sputtering and has a discontinuous region including that includes a plurality of separated segments which are in a discontinuous state on the continuous indium oxide-containing layer, and

the aluminum layer has a radio wave transmission attenuation amount of 10 dB or less.

2. The metallic lustrous member as recited in claim 1 , wherein the aluminum layer has a sheet resistance of 90Ω/□ or more.

3. The metallic lustrous member as recited in claim 1 , wherein the substrate is one selected from the group consisting of a film, a resin molded product, a glass product, and an article itself to be imparted with metallic luster.

4. The metallic lustrous member as recited in claim 1 , wherein the aluminum layer has a maximum thickness of 15 to 80 nm.

5. The metallic lustrous member as recited in claim 1 , wherein the aluminum layer is one of aluminum (Al) and an aluminum (Al) alloy.

6. The metallic lustrous member as recited in claim 5 , wherein a content ratio of aluminum to an entire metal component in the aluminum (Al) alloy is 50% or more.

7. The metallic lustrous member as recited in claim 1 , wherein the aluminum layer is provided on an inner surface of a transparent housing formed using the continuous surface of the substrate.

8. An article using the metallic lustrous member as recited in claim 1 .

9. The article as recited in claim 8 , which is a communication device.

10. A production method for a metallic lustrous member with radio wave transmissibility, or an article using the metallic lustrous member, the method comprising:

forming a continuous indium oxide-containing layer on a surface of a substrate having radio wave transmissibility;

forming an aluminum layer directly on the continuous indium oxide-containing layer on the surface of the substrate by alternating current (AC) sputtering,

wherein the aluminum layer is formed having a discontinuous region that includes a plurality of separated segments which are in a discontinuous state on the continuous indium oxide-containing layer, and wherein the aluminum layer has radio wave transmission attenuation amount of 10 dB or less.

11. The production method as recited in claim 10 , wherein the AC sputtering is performed under a pressure of 1.5 Pa or more.

12. The production method as recited in claim 10 , wherein, during the AC sputtering, the substrate has a temperature of 20° C. or more.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 13, 2020
From: CHEN, XIAOLEI; MACHINAGA, HIRONOBU; NISHIO, HAJIME; WATANABE, TAICHI; NAKAI, TAKAHIRO
To: NITTO DENKO CORPORATION
Reel/Frame 053188/0830 →
Priority Claims (2)
JP JP2018-003620 · Jan 12, 2018 · national
JP JP2019-002727 · Jan 10, 2019 · national
Continuity (1)
Related Publication 20210060904A1 · Mar 4, 2021