3D-NAND memory cell structure
Memory devices and methods of manufacturing memory devices are provided. The device and methods described suppress oxidation of metal layers exposed to ambient oxygen. After an opening is formed, a nitridation process occurs to nitridate the surface of the exposed metal layer inside the opening. The nitridated region formed on the surface of metal layer inside the opening works as a barrier layer for oxygen diffusion. In addition, the nitridated region works as an electrode for charge trap memory cells.
1. A method of forming a memory device, the method comprising:
forming an opening through a metal stack comprising alternating layers of a first material layer and a metal layer; and
annealing the metal stack in an atmosphere of ammonia (NH 3 ) at a temperature in a range of from about 400° C. to about 1000° C. to selectively nitridate a portion of the metal layer through the opening to form a nitridated region adjacent the metal layer, wherein the nitridated region and the metal layer comprise the same metal.
2. The method of claim 1 , wherein the metal stack is formed on one or more of a substrate, a semiconductor layer, and a sacrificial layer.
3. The method of claim 1 , further comprising forming a bitline in the opening, wherein forming the bitline comprises:
depositing a first oxide channel layer in the opening;
depositing a nitride channel layer on the first oxide channel layer;
depositing a second oxide channel layer on the nitride channel layer;
forming a poly-silicon layer in the opening on the second oxide channel layer; and
forming a bitline pad in the poly-silicon layer.
4. The method of claim 3 , further comprising depositing an oxide layer on a top surface of the metal stack prior to forming the opening.
5. The method of claim 4 , further comprising depositing an interlayer dielectric on a top surface of the oxide layer and the bitline pad.
6. The method of claim 1 , wherein the nitridated region has a thickness in a range of from about 0.1 nm to about 10 nm.
7. The method of claim 1 , wherein the nitridated region protrudes into the opening.
8. The method of claim 1 , wherein the nitridated region is recessed from the opening.
9. The method of claim 1 , wherein the metal layer comprises one or more of tungsten (W), molybdenum (Mo), tantalum (Ta), ruthenium (Ru), niobium (Nb), osmium (Os), zirconium (Zr), iridium (Ir), rhenium (Re), titanium (Ti), and the like.
10. The method of claim 1 , wherein the first material layer comprises one or more of tungsten (W), molybdenum (Mo), tantalum (Ta), niobium (Nb), osmium (Os), zirconium (Zr), iridium (Ir), rhenium (Re), titanium (Ti), titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), molybdenum nitride (MoN), zirconium nitride (ZrN), silicon oxide (SiO 2 ), ruthenium oxide (RuO x ), iridium oxide (IrO x ), tungsten oxide (WO x ), silicon nitride (SiN), and the like.
11. The method of claim 1 , wherein the nitridated region comprises one or more of tungsten nitride (WN), molybdenum nitride (MoN), tantalum nitride (TaN), ruthenium nitride (RuN), niobium nitride (NbN), osmium nitride (OsN), zirconium nitride (ZrN), iridium nitride (IrN), rhenium nitride (ReN), titanium nitride (TiN), and the like.
12. The method of claim 1 , further comprising wordline contacts comprising one or more of copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), molybdenum (Mo), nickel (Ni), ruthenium (Ru), silver (Ag), gold (Au), iridium (Ir), tantalum (Ta), and platinum (Pt).
13. A semiconductor memory device comprising:
a metal stack comprising alternating first material layers and metal layers in a first portion of the semiconductor memory device, wherein the alternating first material layers and metal layers do not comprise the same material;
a memory stack in a second portion of the semiconductor memory device, the memory stack comprising:
alternating first material layers and wordlines, the wordlines comprising a metal layer with a metal nitridated region adjacent the metal layer, wherein the nitridated region and the metal layer comprise the same metal,
a plurality of bitlines extending through the memory stack; and
wordline contacts extending from a top surface of the wordlines.
14. The semiconductor memory device of claim 13 , wherein the metal layers comprise one or more of tungsten (W), molybdenum (Mo), tantalum (Ta), ruthenium (Ru), niobium (Nb), osmium (Os), zirconium (Zr), iridium (Ir), rhenium (Re), titanium (Ti), and the metal nitridated region comprises one or more of tungsten nitride (WN), molybdenum nitride (MoN), tantalum nitride (TaN), ruthenium nitride (RuN), niobium nitride (NbN), osmium nitride (OsN), zirconium nitride (ZrN), iridium nitride (IrN), rhenium nitride (ReN), and titanium nitride (TiN).
15. The semiconductor memory device of claim 13 , wherein the first material layers comprise one or more of tungsten (W), molybdenum (Mo), tantalum (Ta), niobium (Nb), osmium (Os), zirconium (Zr), iridium (Ir), rhenium (Re), titanium (Ti), titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), molybdenum nitride (MoN), zirconium nitride (ZrN), silicon oxide (SiO 2 ), ruthenium oxide (RuO x ), iridium oxide (IrO x ), tungsten oxide (WO x ), silicon nitride (SiN), and the like.
16. The semiconductor memory device of claim 13 , wherein the wordline contacts comprise one or more of copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), molybdenum (Mo), nickel (Ni), ruthenium (Ru), silver (Ag), gold (Au), iridium ( 1 r ), tantalum (Ta), and platinum (Pt).
17. A processing tool comprising:
a central transfer station comprising a robot configured to move a wafer;
a plurality of process stations, each process station connected to the central transfer station and providing a processing region separated from processing regions of adjacent process stations, the plurality of process stations comprising an annealing chamber; and
a controller connected to the central transfer station and the plurality of process stations, the controller configured to activate the robot to move the wafer between process stations, and to control a process occurring in each of the process stations, and to nitridate a portion of the metal layers on the wafer at a temperature in a range of from about 400° C. to about 1000° C. in an atmosphere of ammonia (NH 3 ) gas at ambient pressure to form a nitridated region adjacent the metal layer, wherein the nitridated region and the metal layer comprise the same metal.