Semiconductor device
View Patent ↗An eighth semiconductor portion is provided between the first semiconductor portion and the third semiconductor portion. The eighth semiconductor portion is of the second conductivity type, contacting the first semiconductor portion, and having a lower second-conductivity-type impurity concentration than the second semiconductor portion.
1. A semiconductor device, comprising:
a first semiconductor portion of a first conductivity type;
a second semiconductor portion provided on the first semiconductor portion, the second semiconductor portion being of a second conductivity type and contacting the first semiconductor portion;
a third semiconductor portion provided on the first semiconductor portion, the third semiconductor portion being of the second conductivity type and having a lower second-conductivity-type impurity concentration than the second semiconductor portion;
a fourth semiconductor portion provided on the third semiconductor portion, the fourth semiconductor portion being of the first conductivity type and contacting the third semiconductor portion;
a fifth semiconductor portion provided on the first semiconductor portion, the fifth semiconductor portion being of the first conductivity type;
a sixth semiconductor portion provided on the fifth semiconductor portion, the sixth semiconductor portion being of the second conductivity type and contacting the fifth semiconductor portion;
a seventh semiconductor portion provided on the sixth semiconductor portion, the seventh semiconductor portion being of the second conductivity type and having a higher second-conductivity-type impurity concentration than the sixth semiconductor portion;
an eighth semiconductor portion provided between the first semiconductor portion and the third semiconductor portion, the eighth semiconductor portion being of the second conductivity type, contacting the first semiconductor portion, and having a lower second-conductivity-type impurity concentration than the second semiconductor portion;
a ninth semiconductor portion provided on the second semiconductor portion, the ninth semiconductor portion being of the second conductivity type, surrounding a periphery of the third semiconductor portion and a periphery of the fourth semiconductor portion, and having a higher second-conductivity-type impurity concentration than the third semiconductor portion;
a tenth semiconductor portion provided on the fifth semiconductor portion, the tenth semiconductor portion being of the first conductivity type and surrounding a periphery of the sixth semiconductor portion and a periphery of the seventh semiconductor portion;
a first electrode contacting the first semiconductor portion; and
a second electrode contacting the fourth semiconductor portion and the seventh semiconductor portion.
2. The device according to claim 1 , wherein
the second-conductivity-type impurity concentration of the eighth semiconductor portion is greater than the second-conductivity-type impurity concentration of the third semiconductor portion.
3. The device according to claim 1 , wherein
a contact area between the eighth semiconductor portion and the first semiconductor portion is less than a contact area between the second semiconductor portion and the first semiconductor portion.
4. The device according to claim 1 , comprising:
a first diode, a second diode, and a third diode,
the second diode and the third diode being connected in series between the first electrode and the second electrode,
the first diode and a set of diodes including the second and third diodes being connected in parallel between the first electrode and the second electrode,
the first diode including a P-N junction between the fifth semiconductor portion and the sixth semiconductor portion,
the second diode including a P-N junction between the third semiconductor portion and the fourth semiconductor portion,
the third diode including a P-N junction between the first semiconductor portion and the second semiconductor portion.
5. The device according to claim 4 , wherein
the third diode is a zener diode.
6. The device according to claim 4 , wherein
a P-N junction area of the third diode is greater than a P-N junction area of the first diode and a P-N junction area of the second diode.
7. The device according to claim 1 , wherein
the second-conductivity-type impurity concentration of the second semiconductor portion is not less than 1×10 17 and not more than 1×10 19 (atoms/cm 3 ), and
the second-conductivity-type impurity concentration of the eighth semiconductor portion is not less than 5×10 13 and not more than 1×10 15 (atoms/cm 3 ).
8. A semiconductor device, comprising:
a first semiconductor portion of a first conductivity type;
a second semiconductor portion provided on the first semiconductor portion, the second semiconductor portion being of a second conductivity type and contacting the first semiconductor portion;
a third semiconductor portion provided on the first semiconductor portion, the third semiconductor portion being of the second conductivity type and having a lower second-conductivity-type impurity concentration than the second semiconductor portion;
a fourth semiconductor portion provided on the third semiconductor portion, the fourth semiconductor portion being of the first conductivity type and contacting the third semiconductor portion;
a fifth semiconductor portion provided on the first semiconductor portion, the fifth semiconductor portion being of the first conductivity type;
a sixth semiconductor portion provided on the fifth semiconductor portion, the sixth semiconductor portion being of the second conductivity type and contacting the fifth semiconductor portion;
a seventh semiconductor portion provided on the sixth semiconductor portion, the seventh semiconductor portion being of the second conductivity type and having a higher second-conductivity-type impurity concentration than the sixth semiconductor portion;
a first electrode contacting the first semiconductor portion; and
a second electrode contacting the fourth semiconductor portion and the seventh semiconductor portion,
the first semiconductor portion including a first portion and a second portion, the first portion contacting the second semiconductor portion and provided under the fourth semiconductor portion, the second portion contacting the second semiconductor portion at a region adjacent to the first portion,
a first-conductivity-type impurity concentration of the first portion being less than a first-conductivity-type impurity concentration of the second portion.
9. The device according to claim 8 , further comprising:
a ninth semiconductor portion provided on the second semiconductor portion, the ninth semiconductor portion being of the second conductivity type, surrounding a periphery of the third semiconductor portion and a periphery of the fourth semiconductor portion, and having a higher second-conductivity-type impurity concentration than the third semiconductor portion; and
a tenth semiconductor portion provided on the fifth semiconductor portion, the tenth semiconductor portion being of the first conductivity type and surrounding a periphery of the sixth semiconductor portion and a periphery of the seventh semiconductor portion.
10. The device according to claim 8 , comprising:
a first diode, a second diode, and a third diode,
the second diode and the third diode being connected in series between the first electrode and the second electrode,
the first diode and a set of diodes including the second and third diodes being connected in parallel between the first electrode and the second electrode,
the first diode including a P-N junction between the fifth semiconductor portion and the sixth semiconductor portion,
the second diode including a P-N junction between the third semiconductor portion and the fourth semiconductor portion,
the third diode including a P-N junction between the first semiconductor portion and the second semiconductor portion.
11. The device according to claim 10 , wherein
the third diode is a zener diode.
12. The device according to claim 10 , wherein
a P-N junction area of the third diode is greater than a P-N junction area of the first diode and a P-N junction area of the second diode.
13. The device according to claim 8 , wherein
the second-conductivity-type impurity concentration of the second semiconductor portion is not less than 1×10 17 and not more than 1×10 19 (atoms/cm 3 ), and
the second-conductivity-type impurity concentration of the eighth semiconductor portion is not less than 5×10 13 and not more than 1×10 15 (atoms/cm 3 ).
14. The device according to claim 1 , wherein
the second semiconductor portion is an annular region, and
the eighth semiconductor portion is a circular region within the annular region of the second semiconductor portion.
15. The device according to claim 1 , wherein
the eighth semiconductor portion is provided under the fourth semiconductor portion.