Semiconductor devices and methods of manufacture
Photonic devices and methods of manufacture are provided. In embodiments a fill material and/or a secondary waveguide are utilized in order to protect other internal structures such as grating couplers from the rigors of subsequent processing steps. Through the use of these structures at the appropriate times during the manufacturing process, damage and debris that would otherwise interfere with the manufacturing process of the device or operation of the device can be avoided.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a grating coupler over a substrate of a first photonic integrated circuit device, the grating coupler comprising one or more channels for optical signals;
after the forming the grating coupler, covering the grating coupler with a dielectric material;
after the covering the grating coupler, removing a portion of the dielectric material to form an opening as an optical pathway to the grating coupler within the first photonic integrated circuit device;
filling the opening with a fill material; and
forming a first redistribution layer over the fill material.
2. The method of claim 1 , further comprising:
forming a through via on a carrier substrate;
placing the first photonic integrated circuit device adjacent to the through via on the carrier substrate; and
encapsulanting the through via and the first photonic integrated circuit device with an encapsulant, wherein the forming the first redistribution layer forms the first redistribution layer over the fill material.
3. The method of claim 2 , further comprising, prior to the forming the first redistribution layer, planarizing the fill material, the through via, and the encapsulant.
4. The method of claim 3 , further comprising forming a second redistribution layer on an opposite side of the first photonic integrated circuit device from the first redistribution layer.
5. The method of claim 4 , further comprising attaching a first electronic integrated circuit to the first redistribution layer.
6. The method of claim 1 , wherein the fill material comprises polyimide.
7. A semiconductor device comprising:
a first photonic integrated circuit, the first photonic integrated circuit comprising:
a semiconductor substrate;
a waveguide formed within the semiconductor substrate, the waveguide comprising semiconductor sidewalls;
a grating coupler formed within the semiconductor substrate, the grating coupler comprising semiconductor sidewalls;
a fill material overlying the grating coupler; and
external contacts with top surfaces planar with top surfaces of the fill material; and
a redistribution layer overlying the fill material and the external contacts.
8. The semiconductor device of claim 7 , further comprising an encapsulant surrounding the first photonic integrated circuit.
9. The semiconductor device of claim 8 , further comprising through vias extending from a first side of the encapsulant to a second side of the encapsulant.
10. The semiconductor device of claim 9 , further comprising an electronic integrated circuit bonded to the redistribution layer.
11. The semiconductor device of claim 9 , further comprising a first semiconductor die located within the encapsulant.
12. The semiconductor device of claim 11 , further comprising an electronic integrated circuit bonded to the redistribution layer.
13. The semiconductor device of claim 7 , further comprising an optical fiber located over the redistribution layer.
14. The semiconductor device of claim 7 , wherein the fill material is polyimide.
15. A semiconductor device comprising:
a photonic integrated circuit comprising:
a first waveguide over a substrate; and
a second waveguide at least partially over the first waveguide;
an encapsulant encapsulating the photonic integrated circuit, wherein the second waveguide extends at least partially over the encapsulant, wherein the encapsulant comprises a single continuous material throughout the encapsulant;
a redistribution layer overlying the second waveguide, the redistribution layer having a surface that is co-planar with a surface of the second waveguide.
16. The semiconductor device of claim 15 , further comprising through vias extending through the encapsulant.
17. The semiconductor device of claim 16 , further comprising a first semiconductor die within the encapsulant.
18. The semiconductor device of claim 17 , further comprising a second redistribution layer located on an opposite side of the first semiconductor die than the redistribution layer.
19. The semiconductor device of claim 17 , wherein the first waveguide is a silicon waveguide and the second waveguide is a polymer waveguide.
20. The semiconductor device of claim 19 , further comprising:
a dielectric material located between the second waveguide and the encapsulant; and
an optical fiber located adjacent to the second waveguide.