IP Library Granted Patent US 11,615,922
Granted Patent B2
US 11,615,922 · App. 16/964,603 · Granted Mar 28, 2023

Capacitive element and plasma processing device

Inventors: Dongwei Li (Kyoto, JP); Yasunori Ando (Kyoto, JP)
Assignee: NISSIN ELECTRIC CO., LTD.
H01G5/0132H01G5/12H01J37/321H01J37/3244H01J37/32174H01J2237/002
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Quick Facts
Patent No.
US 11,615,922
App. No.
16/964,603
Granted
Mar 28, 2023
Kind
B2
Abstract

A capacitive element using a liquid as a dielectric, whereby the capacitance is prevented from changing. The capacitive element is equipped with: a storage container that has an inlet port for introducing a liquid serving as a dielectric, has an outlet port for discharging the liquid, and is filled with the liquid; and at least one pair of electrodes that are provided in the storage container and face each other, wherein an opening section for exhausting air bubbles in the storage container is formed in an upper wall of the storage container.

Claims (24)

1. A capacitive element comprising:

a storage container which is provided with an inlet port for introducing a liquid serving as a dielectric and an outlet port for discharging the liquid and is filled with the liquid; and

at least a pair of electrodes which are provided inside the storage container and face each other,

wherein one of the pair of electrodes is a fixed electrode, the other of the pair of electrodes is a movable electrode movable with respect to the fixed electrode, and its capacitance is variable, and

wherein an upper wall of the storage container is provided with an opening section exhausting air bubbles in the storage container.

2. The capacitive element according to claim 1 ,

wherein the opening section is formed inside an outer peripheral portion of the upper wall, and

wherein an inner surface of the upper wall is provided with a bubble guide portion which is inclined upward as it goes from the outer peripheral portion of the upper wall toward the opening section and guides air bubbles to the opening section.

3. The capacitive element according to claim 2 ,

wherein the bubble guide portion is a flat surface or a curved surface.

4. The capacitive element according to claim 2 ,

wherein the inlet port is formed in a side wall of the storage container,

wherein the one of the pair of electrodes includes a flange member that is fixed to the side wall and is provided with a through-hole communicating with the inlet port and an electrode plate which is supported by the flange member, and

wherein the inlet port and at least a part of the through-hole communicate with each other without a step.

5. The capacitive element according to claim 1 ,

wherein a pipe member is connected to the opening section and the pipe member is connected to a downstream side of the storage container.

6. The capacitive element according to claim 1 ,

wherein a valve is provided in the opening section or a flow path connecting the opening section and a downstream side of the storage container.

7. A plasma processing device comprising:

the capacitive element according to claim 1 ; and

an antenna conductor which is electrically connected to the capacitive element and through which a high-frequency current flows to generate plasma.

8. The plasma processing device according to claim 7 ,

wherein the antenna conductor includes a flow path through which a cooling liquid flows, and

wherein the liquid serving as the dielectric of the capacitive element is formed by at least the cooling liquid.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 24, 2020
From: LI, DONGWEI; ANDO, YASUNORI
To: NISSIN ELECTRIC CO., LTD.
Reel/Frame 053865/0527 →
Priority Claims (1)
JP JP2018-010961 · Jan 25, 2018 · national
Continuity (1)
Related Publication 20210050156A1 · Feb 18, 2021