Systems and methods for chip-scale lasers with low spatial coherence and directional emission
Exemplary embodiments of the present disclosure include chip-scale laser sources, such as semiconductor laser sources, that produce directional beams with low spatial coherence. The lasing modes are based on the axial orbit in a stable cavity and have good directionality. To reduce the spatial coherence of emission, the number of transverse lasing modes can be increased by fine-tuning the cavity geometry. Decoherence is reached in as little as several nanoseconds. Such rapid decoherence facilitates applications in ultrafast speckle-free full-field imaging.
1. A chip-scale laser device, comprising:
a substrate; and
a laser cavity on the substrate and including cladding layers and a gain medium embedded in a guiding layer, the laser cavity having a first end wall and a second end wall,
wherein a shape of the first end wall and the second end wall is defined to cause the chip-scale laser device to emit light with a spatial coherence that generates a speckle contrast for light emitted by the chip-scale laser device that is less than 0 . 03 and a directionality in which light emission from the chip-scale laser device has a half-width at a half-maximum divergence angle in a range from 20 degrees to 50 degrees in a far field.
2. The chip-scale laser device of claim 1 , wherein the shape of the first end wall and the second end wall creates a near-concentric cavity.
3. The chip-scale laser device of claim 1 , wherein a decoherence time for a laser beam produced by the chip-scale laser device is in a range from 100 picoseconds to 500 nanoseconds.
4. The chip-scale laser device of claim 1 , wherein a ratio of a length of the laser cavity and a width of the laser cavity is equal to about a square root of two.
5. The chip-scale laser device of claim 1 , wherein the shape of the first end wall and the second end wall cause the laser cavity to have a cavity stability parameter in a range from −0.6 to −0.8.
6. The chip-scale laser device of claim 1 , wherein the chip-scale laser device is a semiconductor laser.
7. The chip-scale laser device of claim 1 , wherein the laser cavity is tuned to provide near degeneracy for Q-factors for transverse modes.
8. The chip-scale laser device of claim 1 , further comprising a pair of electrodes that electronically pump the gain medium.
9. The chip-scale laser device of claim 1 , wherein the laser cavity produces continuous wave light output.
10. The chip-scale laser device of claim 1 , wherein the gain medium comprises gallium arsenide.
11. The chip-scale laser device of claim 1 , wherein the guiding layer comprises aluminum gallium arsenide.
12. A method of manufacturing a chip-scale laser device, comprising:
forming a body on a substrate, the body including cladding layers and a gain medium embedded in a guiding layer; and
forming a first end wall and a second end wall of a laser cavity in at least a portion of the body, a shape of the first end wall and the second end wall enabling the chip-scale laser device to emit light with a spatial coherence that generates a speckle contrast for light emitted by the chip-scale laser device that is less than 0.03 and a directionality in which light emission from the chip-scale laser device has a half-width at a half-maximum divergence angle in a range from 20 degrees to 50 degrees in a far field.
13. The method of claim 12 , further comprising disposing a back contact on a back surface of the substrate.
14. The method of claim 12 , wherein forming the laser cavity includes shaping the first end wall and the second end wall to create a near-concentric cavity.
15. The method of claim 12 , further comprising defining a length of the laser cavity and a width of the laser cavity to have a ratio between the length and the width that is equal to about a square root of two.
16. The method of claim 12 , wherein forming the laser cavity includes shaping the first end wall and the second end wall such that the laser cavity has a cavity stability parameter in a range from −0.6 to −0.8.
17. The method of claim 12 , wherein forming the laser cavity includes shaping the first end wall and the second end wall such that the laser cavity is tuned to provide near degeneracy for Q-factors for transverse modes.
18. A method of manufacturing a chip-scale laser device, comprising:
forming a body on a substrate, the body including cladding layers and a gain medium embedded in a guiding layer;
forming a first end wall and a second end wall of a laser cavity in at least a portion of the body by defining the shape of the laser cavity in a photoresist layer disposed on a silicon dioxide layer disposed on the body using photolithography, the shape of the first end wall and the second end wall enabling the chip-scale laser device to emit light with a specified spatial coherence and a specified directionality;
transferring the shape of the laser cavity to the silicon dioxide layer;
removing the remaining photoresist layer;
forming the laser cavity in the body by dry etching using the silicon dioxide layer as a mask; and
removing the silicon dioxide layer.
19. The method of claim 18 , wherein forming the laser cavity includes shaping the first end wall and the second end wall to create a near-concentric cavity.
20. The method of claim 18 , further comprising defining a length of the laser cavity and a width of the laser cavity to have a ratio between the length and the width that is equal to about a square root of two.