QLED and method for manufacturing quantum dot

1. A method for manufacturing a quantum dot, wherein the method comprises:

step S 1 , preparing a preliminary body of a quantum dot, the preliminary body comprising a quantum dot body and preliminary ligands disposed on an outer surface of the quantum dot body;

step S 2 , replacing at least part of the preliminary ligands with at least one modifier to form at least one electrochemical inert ligand on the outer surface of the quantum dot body, thereby forming the quantum dot, a reduction potential of the at least one electrochemical inert ligand is greater than a potential of a bottom of a conduction band of the quantum dot body, an oxidation potential of the at least one electrochemical inert ligand is less than a potential of top of a valence band of the quantum dot body, and a replacement ratio of preliminary ligands with the at least one electrochemical inert ligand is at least 80%, and the at least one modifier comprises the at least one electrochemical inert ligand, a compound comprising at least one cation of the at least one electrochemical inert ligand and at least one anion of the at least one electrochemical inert ligand, a compound comprising at least one cation of the at least one electrochemical inert ligand, a compound comprising at least one anion of the at least one electrochemical inert ligand, or their combinations,

wherein the at least one modifier comprises a first modifier, and the step S 2 comprises:

step S 21 , preparing a first mixed solution, and heating the first mixed solution so that the first modifier replaces at least part of each one of the preliminary ligands to form a first electrochemical inert ligand on the outer surface of the quantum dot body, purifying the first mixed solution after replacement to obtain the quantum dot, and the first mixed solution comprising the preliminary body, a first solvent, and the first modifier,

wherein after the step S 21 , the manufacturing method further comprises a step S 22 , and the step S 22 comprises:

preparing a second mixed solution, replacing at least part of the preliminary ligands with the second modifier to form a second electrochemical inert ligand on the outer surface of the quantum dot body, the second mixed solution comprising the quantum dot, a second solvent, and the second modifier;

heating the second mixed solution until a quantum yield of the quantum dot is greater than or equal to 80%.

2. The manufacturing method according to claim 1 , wherein the at least one modifier comprises at least one fatty amine, at least one alkylphosphine, at least one metal carboxylate, at least one inorganic metal salt, at least one inorganic acid, at least one thiolate, or a combination thereof.

3. The manufacturing method according to claim 2 , wherein at least one cation of the at least one inorganic metal salt comprises at least one calcium ion, at least one magnesium ion, at least one aluminum ion, at least one zirconium ion, at least one lithium ion, at least one sodium ion, at least one barium ion, or a combination thereof.

4. The manufacturing method according to claim 2 , wherein at least one cation of the metal carboxylate comprises at least one calcium ion, at least one magnesium ion, at least one aluminum ion, at least one zirconium ion, at least one lithium ion, at least one sodium ion, at least one barium ion, or a combination thereof.

5. The manufacturing method according to claim 2 , wherein at least one cation of the at least one inorganic metal salt and at least one cation of the at least one metal carboxylate comprise at least one calcium ion, at least one magnesium ion, at least one aluminum ion, at least one zirconium ion, at least one lithium ion, at least one sodium ion, at least one barium ion, or a combination thereof.

6. The manufacturing method according to claim 2 , wherein at least one anion of the at least one inorganic metal salt comprises at least one halogen ion, at least one phosphate ion, at least one sulfate ion, or a combination thereof.

7. The manufacturing method according to claim 2 , wherein at least one anion of the at least one inorganic acid comprises at least one halogen ion, at least one phosphate ion, at least one sulfate ion, or a combination thereof.

8. The manufacturing method according to claim 2 , wherein at least one anion of the at least one inorganic metal salt and at least one anion of the inorganic acid comprise at least one halogen ion, at least one phosphate ion, at least one sulfate ion, or a combination thereof.

9. The manufacturing method according to claim 1 , wherein the first mixed solution further comprises a precursor of an anion which is same with an anion of the quantum dot body.

10. The manufacturing method according to claim 5 , wherein the electrochemical inert ligand comprises a fatty amine.

11. The manufacturing method according to claim 5 , wherein the electrochemical inert ligand comprises an alkylphosphine.

12. The manufacturing method according to claim 5 , wherein the at feast one electrochemical inert ligand comprises a fatty amine and an alkylphosphine.

13. The manufacturing method according to claim 10 , wherein the fatty amine is a C4-C22 fatty amine.