Methods for fabricating pressure sensors with non-silicon diaphragms
Methods of manufacturing a pressure sensor from an SOI wafer are provided. In preferred embodiments, the methods comprise forming a cavity in a SOI wafer by removing a first portion of a bottom silicon layer on the bottom side of the SOI wafer to a depth of an insulator layer; depositing a layer of a second material over the cavity; removing both the silicon layer and the insulator layer from a top side of the SOI wafer in a first plurality of areas above the cavity to form a diaphragm from the layer of a second material, wherein at least one support structure that spans the diaphragm is formed from material above the cavity that was not removed; and forming at least one piezoresistor in the SOI wafer over an intersection of the support structure and SOI wafer at an outside edge of the diaphragm.
1. A method of manufacturing a pressure sensor, the method comprising:
forming a cavity in a bottom side of a SOI wafer by removing a portion of a bottom silicon layer on the bottom side of the SOI wafer to a depth of an insulator layer such that a remaining portion of the bottom silicon layer defines a side wall of the cavity and the insulator layer defines an end wall of the cavity;
depositing a layer of a material within the cavity such that the layer of the material extends over the end wall of the cavity;
removing both a top silicon layer and the insulator layer from a top side of the SOI wafer in a plurality of areas above the cavity such that the layer of the material forms a diaphragm wherein at least one support structure that spans the diaphragm is formed from portions of the top silicon layer and the insulator layer above the cavity that was not removed; and
forming at least one piezoresistor in the SOI wafer over an intersection of the support structure and SOI wafer at an outside edge of the diaphragm.
2. The method of claim 1 , wherein removal of the plurality of areas is accomplished by etching and a mask is applied prior to etching to define boundaries of the diaphragm and the support structure.
3. The method of claim 1 , wherein the layer of the material is deposited only on the end wall of the cavity.
4. The method of claim 1 , wherein the material is a dielectric material.
5. The method of claim 1 , wherein the material is silicon nitride.
6. The method of claim 1 , wherein the support structure is comprised of two spans that span the diaphragm in perpendicular directions to each other.
7. The method of claim 1 , wherein the support structure includes at least one window.
8. The method of claim 1 , wherein the diaphragm is smaller than the cavity.
9. The method of claim 1 , wherein the support structure comprises two spans in one direction and a third span in a second direction perpendicular to the first two spans.
10. The method of claim 1 , wherein the piezoresistor is formed by implanting a P+ material and a P- material in N-type silicon.
11. The method of claim 1 , wherein the piezoresistor is formed by implanting a P+ material in N-type silicon.
12. The method of claim 1 , further comprising the step of coating the diaphragm with a coating that provides corrosive protection.
13. A method of manufacturing a pressure sensor, the method comprising:
removing an area of a bottom silicon layer on a bottom side of a SOI wafer to a depth of an insulator layer to form a cavity, a remaining portion of the bottom silicon layer defining a side wall of the cavity and the insulator layer defining an end wall of the cavity;
depositing a layer of a material within the cavity such that the layer of the material extends over the end wall of the cavity;
removing both a top silicon layer and the insulator layer from a top side of the SOI wafer in a plurality of areas above the cavity such that the layer of the material forms a diaphragm wherein at least one support structure that spans the diaphragm is formed from portions of the top silicon layer and the insulator layer above the cavity that was not removed; and
forming at least one piezoresistor in the SOI wafer over an intersection of the support structure and SOI wafer at an outside edge of the diaphragm.
14. The method of claim 13 , wherein removal of the plurality of areas is accomplished by etching and a mask is applied prior to etching to define boundaries of the diaphragm and the support structure.
15. The method of claim 13 , wherein the layer of the material is deposited only over a bottom of the cavity.
16. The method of claim 13 , wherein the material is a dielectric material.
17. The method of claim 13 , wherein the material is silicon nitride.
18. The method of claim 13 , wherein the support structure is comprised of two spans that span the diaphragm in perpendicular directions to each other.
19. The method of claim 13 , wherein the support structure includes at least one window.
20. A method of manufacturing a pressure sensor, the method comprising:
removing an area of a bottom silicon layer on a bottom side of a SOI wafer to a depth of an insulator layer to form a cavity, a remaining portion of the bottom silicon layer defining a side wall of the cavity and the insulator layer defining an end wall of the cavity;
depositing a layer of a material within the cavity such that the layer of the material extends over the end wall of the cavity;
masking a top side of the SOI wafer to define boundaries for a plurality of areas above the cavity and at least one support structure that spans the cavity;
removing both a top silicon layer and the insulator layer from the top side of the SOI wafer in the plurality of areas to form a diaphragm by exposing the layer of a the material, and wherein the at least one support structure is formed from portions of the top silicon layer and the insulator layer above the cavity that was not removed; and
forming at least one piezoresistor in the SOI wafer over an intersection of the support structure and SOI wafer at an outside edge of the diaphragm.