Low-power flip-flop architecture with high-speed transmission gates
A semiconductor device and a method of operating a semiconductor device are provided. The semiconductor device includes a first latching circuit and a second latching circuit coupled to the first latching circuit. The second latching circuit includes a first feedback circuit and a first transmission circuit, the first feedback circuit configured to receive a first clock signal of a first phase and a second clock signal of a second phase, and the first transmission circuit configured to receive the second clock signal and a third clock signal of a third phase. The first feedback circuit is configured to be turned off by the first clock signal and the second clock signal before the first transmission circuit is turned on by the second clock signal and the third clock signal.
1. A semiconductor device, comprising:
a first latching circuit; and
a second latching circuit coupled to the first latching circuit and having a first feedback circuit and a first transmission circuit, wherein
the first feedback circuit comprises an inverter configured to receive a first clock signal of a first phase and a second clock signal of a second phase,
the first transmission circuit is configured to receive the second clock signal and a third clock signal of a third phase, and
the first feedback circuit is configured to be turned off by the first clock signal and the second clock signal before the first transmission circuit is turned on by the second clock signal and the third clock signal.
2. The semiconductor device of claim 1 , wherein the first latching circuit comprises a second feedback circuit and a second transmission circuit, wherein
the second feedback circuit is configured to receive the second clock signal and the third clock signal,
the second transmission circuit is configured to receive the second clock signal and the third clock signal, and
the second feedback circuit is configured to be turned off by the second clock signal and the third clock signal before the second transmission circuit is turned on by the second clock signal and the third clock signal.
3. The semiconductor device of claim 1 , wherein a first phase-shift quantity exists between the second clock signal and the first clock signal.
4. The semiconductor device of claim 1 , wherein a second phase-shift quantity exists between the third clock signal and the second clock signal.
5. The semiconductor device of claim 1 , wherein the first latching circuit comprises a second feedback circuit and a second transmission circuit, wherein
the second feedback circuit is configured to receive the first clock signal and the second clock signal,
the second transmission circuit is configured to receive the second clock signal and the third clock signal, and
the second feedback circuit is configured to be turned off by the first clock signal and the second clock signal before the second transmission circuit is turned on by the second clock signal and the third clock signal.
6. The semiconductor device of claim 1 , further comprising a clocked device shared by the first latching circuit and the second latching circuit.
7. The semiconductor device of claim 6 , further comprising a phase shift circuit electrically connected between the first transmission circuit and a second transmission circuit of the first latching circuit.
8. The semiconductor device of claim 7 , wherein the phase shift circuit comprises a first inverter and a second inverter, and wherein the first inverter and the second inverter are electrically connected in series.
9. The semiconductor device of claim 6 , further comprising a multiplexing device coupled to the second latching circuit, wherein the clocked device is electrically coupled between the first feedback circuit and the multiplexing device, and is configured to receive the second clock signal.
10. A logical system, comprising:
a number N of flip-flop devices, wherein a first flip-flop device of the number N of flip-flop devices comprises:
a first latching circuit having a first feedback circuit and a first transmission circuit; and
a second latching circuit having a second feedback circuit and a second transmission circuit, wherein
the first feedback circuit is configured to receive a first clock signal of a first phase and a second clock signal of a second phase, and
the second feedback circuit is configured to receive the second clock signal and a third clock signal of a third phase.
11. The logical system of claim 10 , wherein the first transmission circuit is configured to receive a clock signal different than those received by the first feedback circuit, and the second transmission circuit is configured to receive clock signals identical to those received by the second feedback circuit.
12. The logical system of claim 10 , wherein
the first transmission circuit is configured to receive the second clock signal and the third clock signal, and
the second transmission circuit is configured to receive the second clock signal and the third clock signal.
13. The logical system of claim 12 , wherein
the first feedback circuit is configured to be turned off by the first clock signal and the second clock signal before the first transmission circuit is turned on by the second clock signal and the third clock signal.
14. The logical system of claim 13 , wherein
the second feedback circuit is configured to be turned off by the second clock signal and the third clock signal before the second transmission circuit is turned on by the second clock signal and the third clock signal.
15. The logical system of claim 10 , wherein the first flip-flop device further comprises a clocked device shared by the first latching circuit and the second latching circuit.
16. The logical system of claim 15 , wherein the clocked device is configured to receive a clock signal common to the first feedback circuit and the second transmission circuit.
17. The logical system of claim 15 , wherein the clocked device is configured to receive the second clock signal configured to control the first feedback circuit and the second transmission circuit.
18. A method of operating a semiconductor device, comprising:
providing a first clock signal and a second clock signal to a first feedback circuit of a first latching circuit;
providing the second clock signal and a third clock signal to a first transmission circuit of the first latching circuit;
providing the second clock signal and the third clock signal to a second feedback circuit of a second latching circuit; and
providing the second clock signal and the third clock signal to a second transmission circuit of the second latching circuit.
19. The method of claim 18 , wherein a first phase-shift quantity exists between the second clock signal and the first clock signal, and wherein a second phase-shift quantity exists between the third clock signal and the second clock signal.
20. The method of claim 18 , wherein the second clock signal is provided to the first feedback circuit and the second transmission circuit through a clocked device shared by the first latching circuit and the second latching circuit.