Semiconductor light-emitting element
A semiconductor light-emitting element comprises, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm and a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side, a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern. The surface of the light extraction face has a skewness Rsk of −1 or more, and a protective film is provided on the light extraction face.
1. A semiconductor light-emitting element comprising, in this order:
a substrate;
a reflective layer;
a first conductivity type cladding layer made of InGaAsP containing at least In and P;
a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm; and
a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side,
a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern,
wherein the surface of the light extraction face has a skewness Rsk of −1 or more, and a protective film is provided on the light extraction face and an emission spectrum of the semiconductor light-emitting element has a single peak.
2. The semiconductor light-emitting element according to claim 1 , wherein the protective film has a thickness of 100 nm or more and 700 nm or less, and a surface of the protective film has a surface roughness Ra of 0.02 μm or more and a skewness Rsk of −1 or more.
3. The semiconductor light-emitting element of claim 1 , wherein the protective film contains at least one selected from the group consisting of silicon oxide, silicon nitride, ITO, and AlN.
4. A semiconductor light-emitting element comprising, in this order:
a support substrate;
a metal bonding layer
a reflective layer;
a first conductivity type cladding layer made of InGaAsP containing at least In and P;
a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm; and
a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side,
a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern,
wherein the surface of the light extraction face has a skewness Rsk of −1 or more, and a protective film is provided on the light extraction face and an emission spectrum of the semiconductor light-emitting element has a single peak.
5. The semiconductor light-emitting element according to claim 4 , wherein the protective film has a thickness of 100 nm or more and 700 nm or less, and a surface of the protective film has a surface roughness Ra of 0.02 μm or more and a skewness Rsk of −1 or more.
6. The semiconductor light-emitting element of claim 4 , wherein the protective film contains at least one selected from the group consisting of silicon oxide, silicon nitride, ITO, and AlN.
7. A semiconductor light-emitting element comprising, in this order:
a substrate;
a reflective layer;
a first conductivity type cladding layer made of InGaAsP containing at least In and P;
a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm; and
a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side,
wherein a protective film is provided on a surface of a light extraction face of the second conductivity type cladding layer,
and the protective film has a thickness of 100 nm or more and 700 nm or less, and a surface of the protective film has a surface roughness Ra of 0.02 μm or more and a skewness Rsk of −1 or more and an emission spectrum of the semiconductor light-emitting element has a single peak.
8. The semiconductor light-emitting element of claim 7 , wherein the protective film contains at least one selected from the group consisting of silicon oxide, silicon nitride, ITO, and AlN.
9. A semiconductor light-emitting element comprising, in this order:
a support substrate;
a metal bonding layer
a reflective layer;
a first conductivity type cladding layer made of InGaAsP containing at least In and P;
a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm; and
a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side,
wherein a protective film is provided on a surface of a light extraction face of the second conductivity type cladding layer,
and the protective film has a thickness of 100 nm or more and 700 nm or less, and a surface of the protective film has a surface roughness Ra of 0.02 μm or more and a skewness Rsk of −1 or more and an emission spectrum of the semiconductor light-emitting element has a single peak.
10. The semiconductor light-emitting element of claim 9 , wherein the protective film contains at least one selected from the group consisting of silicon oxide, silicon nitride, ITO, and AlN.