IP Library Granted Patent US 11,640,929
Granted Patent B2
US 11,640,929 · App. 16/227,201 · Granted May 2, 2023

Thermal management solutions for cored substrates

Inventors: Nicholas Neal (Gilbert, AZ); Divya Mani (Chandler, AZ); Nicholas Haehn (Scottsdale, AZ)
Assignee: Intel Corporation
H01L23/473H01L21/481H01L21/4846H01L21/4871H01L23/467H01L23/49827H01L23/49838H01L24/16H01L2224/16227
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Quick Facts
Patent No.
US 11,640,929
App. No.
16/227,201
Granted
May 2, 2023
Kind
B2
Abstract

An integrated circuit assembly may be formed having a substrate core, wherein the substrate core includes at least one heat transfer fluid channel formed therein, a first build-up layer formed on a first surface of the substrate core, and a second build-up layer formed on a second surface of the substrate core, and methods of fabricating the same. In embodiments of the present description, the integrated circuit structure may include at least one integrated circuit device formed within at least one of the first build-up layer and the second build-up layer. The embodiments of the present description allow for cooling within the substrate, which may significantly reduce thermal damage to the components of the substrate and/or integrated circuit devices within the substrate.

Claims (30)

1. An integrated circuit assembly, comprising:

a substrate core having a first surface and an opposing second surface;

at least one heat transfer fluid channel within the substrate core between the first surface and the second surface, wherein the heat transfer fluid channel comprises a cavity, the cavity within a metal block and covered by a metal capping layer, wherein the metal block is at least partially within a trench in the substrate core;

a first build-up layer adjacent the first surface of the substrate core; and

a second build-up layer adjacent the second surface of the substrate core.

2. The integrated circuit assembly of claim 1 , further comprising at least one integrated circuit device electrically connected to at least one of the first build-up layer or the second build-up layer.

3. The integrated circuit assembly of claim 1 , further comprising at least one integrated circuit device embedded within at least one of the first build-up layer or the second build-up layer.

4. The integrated circuit assembly of claim 1 , wherein the substrate core further comprises at least one inlet port and at least one outlet port, wherein the at least one heat transfer fluid channel extends between the at least one inlet port and the at least one outlet port.

5. The integrated circuit assembly of claim 4 , further comprising a first heat transfer fluid conduit extending from one of the inlet port or the outlet port to a surface of the first build-up layer opposite the first surface of the substrate core.

6. The integrated circuit assembly of claim 1 , wherein, in a plane orthogonal to fluid flow within the heat transfer fluid channel, the heat transfer fluid channel comprises a cross-sectional shape having a rounded edge.

7. The integrated circuit assembly of claim 1 , further comprising an etch mask between the metal capping layer and the metal block.

8. The integrated circuit assembly of claim 1 , wherein the metal capping layer is directly on the metal block.

9. The integrated circuit assembly of claim 1 , wherein the metal block comprises one of copper or aluminum.

10. The integrated circuit assembly of claim 1 , further comprising at least one electrical connector extending between the first surface of the substrate core and the second surface of the substrate core.

11. A system, comprising:

a board; and

an integrated circuit package electrically attached to the board, wherein the integrated circuit package comprises:

a substrate core having a first surface and an opposing second surface;

at least one heat transfer fluid channel within the substrate core between the first surface and the second surface, wherein the heat transfer fluid channel comprises a cavity, the cavity within a metal block and covered by a metal capping layer, wherein the metal block is at least partially within a trench in the substrate core;

a first build-up layer adjacent the first surface of the substrate core; and

a second build-up layer adjacent the second surface of the substrate core.

12. The system of claim 11 , further comprising at least one integrated circuit device electrically connected to at least one of the first build-up layer or the second build-up layer.

13. The system of claim 11 , further comprising at least one integrated circuit device embedded within at least one of the first build-up layer or the second build-up layer.

14. The system of claim 11 , wherein the substrate core further comprises at least one inlet port and at least one outlet port, wherein the at least one heat transfer fluid channel extends between the at least one inlet port and the at least one outlet port.

15. The system of claim 14 , further comprising a first heat transfer fluid conduit extending from one of the inlet port or the outlet port to a surface of the first build-up layer opposite the first surface of the substrate core.

16. The system of claim 11 , wherein, in a plane orthogonal to fluid flow within the heat transfer fluid channel, the heat transfer fluid channel comprises a cross-sectional shape having a rounded edge.

17. The system of claim 11 , further comprising an etch mask between the metal capping layer and the metal block.

18. The system of claim 11 , wherein the metal capping layer is directly on the metal block.

19. The system of claim 11 , wherein the metal block comprises one of copper or aluminum.

20. The system of claim 11 , further comprising at least one electrical connector extending between the first surface of the substrate core and the second surface of the substrate core.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 17, 2019
From: NEAL, NICHOLAS; MANI, DIVYA; HAEHN, NICHOLAS
To: INTEL CORPORATION
Reel/Frame 048084/0995 →
Continuity (1)
Related Publication 20200203256A1 · Jun 25, 2020
Cited By (1)
US 12,482,715